PIN光电二极管的光微波变频工艺研究

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI:10.1109/EDMO.1999.821468

J. Dawidczyk, B. Galwas, S. Malyshev

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引用次数: 7

摘要

本文报道了在PIN光电探测器上进行光微波混合过程的研究。工作频率为1.3 /spl mu/m的平面InGaAsP/InGaAs/InP异质结构PIN光电二极管已用于光电混频器配置。假设了PIN光电二极管的非线性模型。从测量数据中提取了该装置的非线性等效电路参数。考虑了非线性响应的影响。给出了简要的数学分析和测量结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of optical-microwave frequency conversion processes for PIN photodiode

Investigations of optical-microwave mixing process performed on a PIN photodetector are reported in the paper. The planar InGaAsP/InGaAs/InP heterostructure PIN photodiode operating at 1.3 /spl mu/m has been used in an optoelectronic mixer configuration. The nonlinear model of the PIN photodiode has been assumed. The parameters of nonlinear equivalent circuit of the device have been extracted from the measured data. The influence of nonlinear responsivity has been considered. The short mathematical analysis, and measurement results are presented.

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来源期刊

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)

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