发布求助
文献互助 智能选刊 最新文献

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)最新文献

筛选
英文 中文
InP-based HBT circuits for lightwave and millimeterwave applications 光波和毫米波应用的基于inp的HBT电路
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821467
Y. Baeyens, R. Pullela, J. Mattia, R. Kopf, H. Tsai, G. Georgiou, R. Hamm, Y.C. Wang, Y. Chen
{"title":"InP-based HBT circuits for lightwave and millimeterwave applications","authors":"Y. Baeyens, R. Pullela, J. Mattia, R. Kopf, H. Tsai, G. Georgiou, R. Hamm, Y.C. Wang, Y. Chen","doi":"10.1109/EDMO.1999.821467","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821467","url":null,"abstract":"HBTs offer advantages such as a high transconductance per unit area allowing high integration density of digital and analog functions; reduced low frequency noise making them attractive for low phase noise oscillators and DC coupling between stages without level shifting diodes. InGaAs/lnP double heterojunction bipolar transistors (HBTs)) offer the advantages over GaAs/AlGaAs HBTs of a lower turn-on voltage, higher electron mobility, better thermal dissipation and better microwave performance, while still obtaining a high breakdown voltage. Additionally, the layer structure of InAlAs/InGaAs/InP HBTs allows monolithic OEIC integration with long-wavelength photodiodes. In our presentation, we will demonstrate the capabilities of InP-based HBT's by a number of lightwave and millimeterwave circuits, designed using a combination of digital, analog and microwave technique.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129282169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of 4H-SiC varactor diodes for microwave applications 微波用4H-SiC变容二极管的评价
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821502
N. Wright, A. Knights, A. O'Neill, C. Johnson
{"title":"Evaluation of 4H-SiC varactor diodes for microwave applications","authors":"N. Wright, A. Knights, A. O'Neill, C. Johnson","doi":"10.1109/EDMO.1999.821502","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821502","url":null,"abstract":"The suitability of SiC p-n junction and Schottky varactor diodes for high frequency applications is demonstrated. It is shown that such devices are capable of operating at high biases (over 130 V)-offering greater power density, impedance and operating temperature compared to conventional GaAs or Si varactors. The limitations induced by relatively high contact resistivities are evaluated in terms of applications at 10 GHz.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126478742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design and analysis of an X-band MMIC "bus-bar" power combiner 一种x波段MMIC“母线”功率合成器的设计与分析
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821479
S. Marsh, D. Lau, R. Sloan, L. E. Davis
{"title":"Design and analysis of an X-band MMIC \"bus-bar\" power combiner","authors":"S. Marsh, D. Lau, R. Sloan, L. E. Davis","doi":"10.1109/EDMO.1999.821479","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821479","url":null,"abstract":"A design procedure has been developed for the \"bus-bar\" MMIC power combiner. All the assumptions made during the design are tested and verified, and the amplitude and phase balances of such a combiner are analysed. The effects of power imbalance on the overall gain of a 4 W MMIC power amplifier are also investigated at 10 GHz.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134251849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Thermal simulations of III/V HEMTs III/V hemt的热模拟
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821465
R. Quay, R. Reuter, T. Grasser, S. Selberherr
{"title":"Thermal simulations of III/V HEMTs","authors":"R. Quay, R. Reuter, T. Grasser, S. Selberherr","doi":"10.1109/EDMO.1999.821465","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821465","url":null,"abstract":"Thermal management is a key problem for semiconductor RF-components due to the reduction of chip and device performance by thermal effects. The simulation of devices at various operating temperatures and the inclusion of self-heating effects in the simulation are therefore crucial for the optimization of devices with respect to chip and system performance as well as for reliability concerns. We present investigations of GaAs based high electron mobility transistors (HEMTs) using the two-dimensional device simulator MINIMOS-NT. This includes the critical influence of the contact modeling and findings for realistic thermal boundary conditions. Temperature dependent DC transfer characteristics, RF-simulation results, and comparisons to measurements of state of the art HEMTs are given.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133117746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Rigorous study of near and far fields for spot-size converted semiconductor lasers 对光斑尺寸转换半导体激光器近场和远场的严格研究
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821496
B. Rahman, P. Arasaratnam, M. Kemper, T. Wongcharoen, M. Meyer, M. Rajarajan, K. Grattan
{"title":"Rigorous study of near and far fields for spot-size converted semiconductor lasers","authors":"B. Rahman, P. Arasaratnam, M. Kemper, T. Wongcharoen, M. Meyer, M. Rajarajan, K. Grattan","doi":"10.1109/EDMO.1999.821496","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821496","url":null,"abstract":"Recently, monolithically integrated spot-size converters (SSCs) have increasingly been used to improve the butt-coupling efficiency between a single mode fiber and a semiconductor laser, without deteriorating the alignment tolerances. In this work, the simulated results presented show the expansion of the spot-size and consequently the increase in the coupling efficiency for various designs of spot-size converters. The reflection coefficients and a study of the alignment tolerances for such SSCs are also presented, as is the far field generated from the modal field profile of the lasers. A field expansion technique has been developed to estimate the evolution of the optical field near the laser facet.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133342887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization and reduction of edge leakage current in AlGaAs/GaAs heterojunction bipolar transistors AlGaAs/GaAs异质结双极晶体管边漏电流的表征与减小
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821493
S. Bansropun, R. Woods, J. Roberts, R. Grey
{"title":"Characterization and reduction of edge leakage current in AlGaAs/GaAs heterojunction bipolar transistors","authors":"S. Bansropun, R. Woods, J. Roberts, R. Grey","doi":"10.1109/EDMO.1999.821493","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821493","url":null,"abstract":"The dependence of the performance of circular n-p-n AlGaAs/GaAs heterojunction bipolar transistors on structural design considerations and different base doping levels is investigated. It is shown that the inclusion of a thinned-emitter edge shoulder structure has a significant effect on the mesa edge leakage current of circular devices of different emitter sizes. MOVPE and MBE grown heterojunction bipolar transistors, with different base dopants and doping levels, are assessed. The use of a heavily carbon-doped base with doping levels varying from 2/spl times/10/sup 18/ cm/sup -3/ to 5/spl times/10/sup 19/ cm/sup -3/, is also examined. MBE-grown wafers have shown good transistor characteristics, but poor gain. However, a five-fold decrease in base doping level of MBE-grown devices produces an increase in current gain of nearly the same order. MOVPE-grown wafers have both good transistor performance and high current gain with a 30% gain improvement for 100 /spl mu/m compared to 200 /spl mu/m emitter-sized devices.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129491297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Non-linear characterisation of microwave devices 微波器件的非线性特性
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821476
P. Tasker
{"title":"Non-linear characterisation of microwave devices","authors":"P. Tasker","doi":"10.1109/EDMO.1999.821476","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821476","url":null,"abstract":"At the present time there is an increasing demand for high frequency electronic systems that involve the operation of semiconductor devices under conditions where their non-linear behaviour will affect system performance. To correctly predict system performance it is thus necessary to both characterise and model the non-linear behaviour of semiconductor devices under large signal high frequency excitation. Over the last 10 years' time domain measurements at microwave frequencies have been perfected to the point that they cart now provide full two-port vector corrected measurement over a broad bandwidth; such measurement systems are collectively referred to as Non-Linear Vector Network Analysers (NLVNAs). NLVNAs provide an ideal tool for investigating the large signal behaviour of semiconductor devices. This paper discusses the realisation of an NLVNA and provides an indication of how it can be used both in the investigation of large signal circuit behaviour and for the extraction of non-linear models.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115434180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Multicolour infrared detection with In/sub 0.1/Ga/sub 0.9/As/Al/sub 0.33/Ga/sub 0.67/As double and triple-coupled quantum well infrared photodetectors In/sub 0.1/Ga/sub 0.9/As/Al/sub 0.33/Ga/sub 0.67/As双耦合和三耦合量子阱红外探测器的多色红外探测
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821471
A. Stead, M. Missous
{"title":"Multicolour infrared detection with In/sub 0.1/Ga/sub 0.9/As/Al/sub 0.33/Ga/sub 0.67/As double and triple-coupled quantum well infrared photodetectors","authors":"A. Stead, M. Missous","doi":"10.1109/EDMO.1999.821471","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821471","url":null,"abstract":"Two structures, designed to detect two and three infrared colours using coupled quantum wells in the are demonstrated. Both structures were initially grown without contacts on double-sided substrates to facilitate infrared absorption measurements. The 'two-colour' sample shows absorption at 7.4 /spl mu/m and 9.1 /spl mu/m, whereas the 'three-colour' sample shows absorption at 6.25 /spl mu/m, 9.5 /spl mu/m and 12.8 /spl mu/m. To our knowledge this is the first time coupled quantum wells of the same composition have been used to detect multiple colours. Samples were then grown with contact layers to facilitate photoresponse measurements. Current-voltage and black body responsivity measurements are presented for these devices.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122955071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Energy propagation properties of Al-lossy lines in high-speed circuits on silicon substrate 硅衬底上高速电路中al损耗线的能量传播特性
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821501
M. Gospodinova-Daltcheva, R. Arnaudov, P. Philippov
{"title":"Energy propagation properties of Al-lossy lines in high-speed circuits on silicon substrate","authors":"M. Gospodinova-Daltcheva, R. Arnaudov, P. Philippov","doi":"10.1109/EDMO.1999.821501","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821501","url":null,"abstract":"This paper presents a discussion on the analysis and modelling of energy propagation of Al-interconnects on silicon substrate. A superposition of a DC biasing to the high-speed signal applied to the line is suggested. To provide the characterization of this effect a number of test structures containing a variety of asymmetric transmission lines were prepared. S-parameters data were measured using a vector network analyser and the measured data were compared to theoretical predictions. TEM-wave propagation was considered. The obtained results show a certain change in energy propagation while changing the value of DC biasing voltage. The obtained results suggest a way of controlling the performance and energy propagation of interconnects on semiconductor substrates. The method can be applied to coupled lines as well.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128325325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-field phenomena and reliability issues in microwave heterojunction FETs 微波异质结场效应管的高场现象和可靠性问题
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI: 10.1109/EDMO.1999.821463
R. Menozzi
{"title":"High-field phenomena and reliability issues in microwave heterojunction FETs","authors":"R. Menozzi","doi":"10.1109/EDMO.1999.821463","DOIUrl":"https://doi.org/10.1109/EDMO.1999.821463","url":null,"abstract":"This work overviews different issues connected with high electric field conditions in power microwave AlGaAs-GaAs heterojunction FETs (HFETs). These conditions and possible attendant degradation mechanisms, are likely to take place when devices are operated at high drain voltage for power amplification. Typical degradation modes described in this paper include drain current and transconductance reduction (and power slump). A physical interpretation of the experimental results is given with the support of numerical device simulations. The non-trivial relationship between the drain-gate HFET breakdown voltage and the device reliability is also discussed in some detail.","PeriodicalId":114744,"journal":{"name":"1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128338989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信