Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401) Pub Date : 1999-11-22 DOI:10.1109/EDMO.1999.821495

A. Rusani, J. Kuchenbecker, M. Norgarino, R. Plana, J. Graffeuil, M. Vanzi

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引用次数: 3

Abstract

GaInP/GaAs HBTs demonstrate outstanding long-term reliability performance. Nevertheless they still suffer from a short-term DC current gain instability, known as the burn-in effect. Even if the effect is usually attributed to hydrogen contamination passivating the carbon atoms employed as base dopant, the underlying physical mechanism is still unclear. The present work addresses the burn-in effect by means of numerical simulations performed with the device simulation software BLAZE by Silvaco. The results give support to the hypothesis that the burn-in effect is a surface related phenomenon. The simulations reveal that a fixed surface charge located near the edge of the emitter mesa should be introduced. The work points out also that simultaneous variations of both this charge and of the surface recombination velocity should be taken into account. This simulation approach could be a useful tool, in order to develop a chemical/physical model of the burn-in effect.

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用数值模拟方法研究微波GaInP/GaAs HBTs的烧蚀效应

GaInP/GaAs HBTs具有出色的长期可靠性性能。然而，它们仍然受到短期直流电流增益不稳定的影响，称为老化效应。即使这种效应通常归因于氢污染钝化了作为碱掺杂剂的碳原子，但其潜在的物理机制仍不清楚。本工作通过使用Silvaco的设备仿真软件BLAZE进行数值模拟来解决老化效应。研究结果支持了老化效应是表面相关现象的假设。仿真结果表明，应在发射极台地边缘附近引入固定的表面电荷。研究还指出，应同时考虑电荷和表面复合速度的变化。这种模拟方法可能是一种有用的工具，可以开发出老化效应的化学/物理模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)

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