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Steady state characterization of current ripple in DCM interleaved power converters DCM交错功率变换器电流纹波的稳态特性
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574087
P. Cervellini, P. Antoszczuk, R. G. Retegui, M. Funes, D. Carrica
{"title":"Steady state characterization of current ripple in DCM interleaved power converters","authors":"P. Cervellini, P. Antoszczuk, R. G. Retegui, M. Funes, D. Carrica","doi":"10.1109/CAMTA.2016.7574087","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574087","url":null,"abstract":"Power converters that operate in Discontinuous Conduction Mode (DCM) are able to reduce switching losses, when compared to Continuous Conduction Mode (CCM) operation. This reduction is mainly due to zero current commutation and the reduction of the reverse recovery losses. However, DCM operation in high power converters is limited due to the increment in current ripple, which increases losses and volume in the differential mode (DM) filter. Multiphase DCM power converters can reduce total ripple by dividing total current among N phases and interleaving its ripples. Nevertheless, magnitude of ripple reduction as a function of the system parameters has not yet been completely determined. This information would be an important performance indicator and a useful tool for aiding in the design of key converter features, such as the number of phases and DM filter design, in order to meet total ripple, losses or electromagnetic interference specifications. In this sense, this paper proposes a methodology for the steady state characterization of input and output ripple in both buck and boost converters operating in DCM. Experimental tests on a 4-phase buck converter validate the proposal.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126330471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Design and characterization of Hall Plates in a 0.5μm CMOS process 0.5μm CMOS工艺中霍尔片的设计与表征
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574091
N. Ronis, M. Garcia-Inza
{"title":"Design and characterization of Hall Plates in a 0.5μm CMOS process","authors":"N. Ronis, M. Garcia-Inza","doi":"10.1109/CAMTA.2016.7574091","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574091","url":null,"abstract":"Four different N-well Hall Plate geometries were designed and fabricated in a 0.5μm CMOS process provided by MOSIS. Different shapes, sizes, contact distribution and dimensions were used in order to characterize Hall Plate sensitivity and resistance in a range of temperatures from -40°C up to 165°C. To remove the offset a four-phase current spinning method was used. The results show a better sensitivity performance in the cross-shaped whereas the small square shape has a slight improvement in the SNR behavior. The sensitivity of the different Hall Plate geometries was simulated using a model based on finite-element showing good agreement with the measurements.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121779123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of excitonic carrier dynamics in quantum dot solar cells by numerical simulations 量子点太阳能电池中激子载流子动力学的数值模拟研究
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574088
A. Cédola, M. Cappelletti, E. L. Peltzer y Blanća
{"title":"Study of excitonic carrier dynamics in quantum dot solar cells by numerical simulations","authors":"A. Cédola, M. Cappelletti, E. L. Peltzer y Blanća","doi":"10.1109/CAMTA.2016.7574088","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574088","url":null,"abstract":"This paper presents a theoretical study about the influence of fully correlated electron and holes on the performance of quantum dot solar cells. A device-level model combining drift-diffusion equations for bulk carriers and rate equations for carrier dynamics in the quantum dot states, developed ad hoc by some of the authors, was applied to investigate the internal processes involved in the operation of InAs/GaAs quantum dot solar cells, considering excitonic capture and escape dynamics. It is demonstrated, in line with previous theoretical and experimental works, that the excitonic behavior of carriers in the nanostructures could be the responsible of the non-additive characteristic of the quantum dot contribution to the total solar cell photocurrent. Separate carrier capture and escape are also investigated and compared to the excitonic dynamics.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116121479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
COTS CMOS active pixel sensors damage after alpha, thermal neutron, and gamma irradiation COTS CMOS有源像素传感器在α、热中子和γ辐照后的损伤
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574085
F. Alcalde Bessia, M. Pérez, I. Sidelnik, M. Sofo Haro, J. Jerónimo Blostein, M. Gómez Berisso, J. Marin, J. Lipovetzky
{"title":"COTS CMOS active pixel sensors damage after alpha, thermal neutron, and gamma irradiation","authors":"F. Alcalde Bessia, M. Pérez, I. Sidelnik, M. Sofo Haro, J. Jerónimo Blostein, M. Gómez Berisso, J. Marin, J. Lipovetzky","doi":"10.1109/CAMTA.2016.7574085","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574085","url":null,"abstract":"This work compares the damage produced by alpha particles, thermal neutrons and gamma photons to Commercial-Off-The-Shelf CMOS image sensors. Image sensors were exposed to alpha particles from the decay of Uranium and Americium sources which caused permanent damage to pixels immediately after a particle hit. Similar failure mode was seen when sensors were exposed to thermal neutrons in the Neutron Imaging Facility of the RA-6 Nuclear research reactor, whereas no damage was seen after exposure to 137Cs gamma rays. Due to the similarity between alpha and thermal neutron effects, and since silicon transmutation by neutron capture is very unlikely, we conclude that the Boron-Phosphorous Silicate Glass (BPSG) on top of the silicon acts as a conversion layer producing charged particles which in turn cause damage to the sensor.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131222872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A floating voltage regulator with output level sensor for applications with variable high voltage supply in the range of 8.5 V to 35 V 具有输出液位传感器的浮动稳压器，适用于8.5 V至35 V范围内可变高压电源的应用
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574090
J. Osinaga, Julio Saldana, W. Van Noije
{"title":"A floating voltage regulator with output level sensor for applications with variable high voltage supply in the range of 8.5 V to 35 V","authors":"J. Osinaga, Julio Saldana, W. Van Noije","doi":"10.1109/CAMTA.2016.7574090","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574090","url":null,"abstract":"In this paper we present the design and implementation of a linear voltage regulator using a 0.6μm CMOS high voltage process. The circuit provides a “floating ground” of 5 V below a supply voltage that can vary between 8.5 V and 35V. An additional feature of a voltage level sensor, generating a low voltage signal that advise the state of the regulator is provided by the circuit. The proposed topology, calculations, simulations and measurements of the implemented circuit are exposed in this work. The area of the floating regulator circuit is 599μm × 329μm, the measured output voltage presents a 2.5% standard deviation from the designed voltage.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123223267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An statistical filtering models comparison for GNSS LEO satellite navigation GNSS低轨卫星导航的统计滤波模型比较
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574089
Jorge Cogo, Javier G. García, P. A. Roncagliolo, C. Muravchik
{"title":"An statistical filtering models comparison for GNSS LEO satellite navigation","authors":"Jorge Cogo, Javier G. García, P. A. Roncagliolo, C. Muravchik","doi":"10.1109/CAMTA.2016.7574089","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574089","url":null,"abstract":"In this work the performance of different statistical filtering models used for estimating states of aerospace vehicles, particularly LEO satellites, based on measurements of GNSS systems are compared. This problem is non-linear in nature, since both the state variables model and the output function are non-linear. Thus we resort to the use of the extension of the Kalman filter called EKF. Different models based on several kinematic and dynamic approaches are considered. For the performance assessment we use representative simulation scenarios. Finally, as a real application example, the case of GPS measurements taken on board the Argentine SAC-D satellite is analyzed.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123490671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of a sCMOS Interoperable Process Design Kit and an open set of standard digital cells 开发一个可互操作的sCMOS过程设计工具包和一套开放的标准数字单元
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574082
G. A. Sanca, O. Alpago, M. Garcia-Inza
{"title":"Development of a sCMOS Interoperable Process Design Kit and an open set of standard digital cells","authors":"G. A. Sanca, O. Alpago, M. Garcia-Inza","doi":"10.1109/CAMTA.2016.7574082","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574082","url":null,"abstract":"An Interoperable Process Design Kit (iPDK) was developed for the scalable CMOS process SCN3ME provided by ON Semiconductors, reachable across MOSIS. It includes DRC and LVS rules, SPICE models, technology files, verification and extraction files, execution scripts, symbol library and parametric cells (PCells). Then, using the iPDK, a set of standard digital cells were developed. A test chip was designed and fabricated. Measurements results are presented.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"343 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133772765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modelling approach for low-frequency strongly coupled magnetic resonance wireless power transfer system 低频强耦合磁共振无线电力传输系统建模方法
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574084
Agustin Rodriguez-Esteva, Ma Sofia Perez Casulo, Bruno Serra Laborde, Pablo Pérez-Nicoli, F. Silveira
{"title":"Modelling approach for low-frequency strongly coupled magnetic resonance wireless power transfer system","authors":"Agustin Rodriguez-Esteva, Ma Sofia Perez Casulo, Bruno Serra Laborde, Pablo Pérez-Nicoli, F. Silveira","doi":"10.1109/CAMTA.2016.7574084","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574084","url":null,"abstract":"This work describes the characterization of a three coil system presenting strongly coupled magnetic resonance (SCMR) at low frequency. A theoretical model for the power transmission efficiency between coils is studied, in order to predict the system behaviour, for different positions of the auxiliary coil placed in the middle of the transmission. The best approach for determining each parameter that impacts the performance (inductance, coupling coefficients and quality factor) is found for this low-frequency system. The power transfer efficiency of a typical two coil system is increased 270 times by adding an optimized auxiliary coil in the middle. Theoretical models and experimental measures are in good agreement.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123184408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-level simulation of an FSK modulator based on memconductor 基于mem导体的FSK调制器的高级仿真
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574081
C. Sánchez-López, L. E. Aguila-Cuapio, I. Carro-Perez, H. G. González-Hernández
{"title":"High-level simulation of an FSK modulator based on memconductor","authors":"C. Sánchez-López, L. E. Aguila-Cuapio, I. Carro-Perez, H. G. González-Hernández","doi":"10.1109/CAMTA.2016.7574081","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574081","url":null,"abstract":"This paper deals with the high-level simulation of a frequency-shift-keying (FSK) modulator based on charge-controlled memconductor. The behavioral model of the memconductor is built on SIMULINK under MATLAB environment. It is demonstrated that the incremental memconductance increases and decreases according the width and amplitude of a positive and negative pulse signal, respectively; whereas the decremental memconductance increases and decreases according the width and amplitude of a negative and positive pulse signal. Both incremental and decremental memconductances are used to on-line reconfigure the frequency of oscillation of a single-memconductor controlled oscillator configured as FSK modulator. The obtained results not only allows an easy reconfigurability of the FSK modulator, but also demonstrate the viability of the memconductor to be used in other applications such as cellular neural networks, controllers, sensors, chaotic systems, relaxation oscillators, nonvolatile memory devices and programmable analog circuits.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134440842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Simplified model for radiation effects in MOS devices MOS器件辐射效应的简化模型
2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Pub Date : 2016-08-01 DOI: 10.1109/CAMTA.2016.7574086
L. Sambuco Salomone, A. Faigón
{"title":"Simplified model for radiation effects in MOS devices","authors":"L. Sambuco Salomone, A. Faigón","doi":"10.1109/CAMTA.2016.7574086","DOIUrl":"https://doi.org/10.1109/CAMTA.2016.7574086","url":null,"abstract":"The spatial distribution of trapped holes in the gate oxide of MOS exposed to ionizing radiation plays a significant role in the dynamics of the threshold voltage shift with dose, specially when switched bias measurements are considered. In this work, we analyze currently available simplified models stressing out their limitations when dealing with complex measurements. Therefore, we present a simplified model based on the fitting of the evolution with dose of the spatial distribution of trapped holes obtained from a physics-based numerical model. For that, a two-exponential expression was considered, with four fitting parameters. Then, the change with dose of these parameters is considered. The effect the variation of the capture and neutralization rates has on the spatial distribution of trapped holes is analyzed to better understanding radiation effects in MOS devices and also to contribute to the development of simplified numerical models capable of reproducing complex dynamics.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114146580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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