High-level simulation of an FSK modulator based on memconductor

C. Sánchez-López, L. E. Aguila-Cuapio, I. Carro-Perez, H. G. González-Hernández
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引用次数: 4

Abstract

This paper deals with the high-level simulation of a frequency-shift-keying (FSK) modulator based on charge-controlled memconductor. The behavioral model of the memconductor is built on SIMULINK under MATLAB environment. It is demonstrated that the incremental memconductance increases and decreases according the width and amplitude of a positive and negative pulse signal, respectively; whereas the decremental memconductance increases and decreases according the width and amplitude of a negative and positive pulse signal. Both incremental and decremental memconductances are used to on-line reconfigure the frequency of oscillation of a single-memconductor controlled oscillator configured as FSK modulator. The obtained results not only allows an easy reconfigurability of the FSK modulator, but also demonstrate the viability of the memconductor to be used in other applications such as cellular neural networks, controllers, sensors, chaotic systems, relaxation oscillators, nonvolatile memory devices and programmable analog circuits.
基于mem导体的FSK调制器的高级仿真
本文研究了一种基于电荷控制mem导体的移频键控调制器的高级仿真。在MATLAB环境下,利用SIMULINK建立了memconductor的行为模型。结果表明,增量电导分别随正负脉冲信号的宽度和幅度而增大和减小;而递减电导则随正负脉冲信号的宽度和幅度而增大或减小。采用增量和递减两种方法在线重新配置了作为FSK调制器的单薄膜控制振荡器的振荡频率。所获得的结果不仅允许FSK调制器易于重新配置,而且还证明了memconductor在其他应用中的可行性,例如细胞神经网络,控制器,传感器,混沌系统,松弛振荡器,非易失性存储设备和可编程模拟电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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