COTS CMOS有源像素传感器在α、热中子和γ辐照后的损伤

F. Alcalde Bessia, M. Pérez, I. Sidelnik, M. Sofo Haro, J. Jerónimo Blostein, M. Gómez Berisso, J. Marin, J. Lipovetzky
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引用次数: 3

摘要

这项工作将α粒子、热中子和γ光子与商用CMOS图像传感器产生的损伤进行了比较。图像传感器暴露在来自铀和镅衰变源的α粒子中,这些粒子在击中后立即对像素造成永久性损伤。在RA-6核研究反应堆的中子成像设备中,当传感器暴露于热中子中时,也出现了类似的故障模式,而暴露于137Cs伽马射线后,则没有看到损坏。由于α和热中子效应之间的相似性,并且由于通过中子捕获的硅嬗变是非常不可能的,我们得出结论,硅顶部的硼磷硅酸盐玻璃(BPSG)作为转换层产生带电粒子,从而导致传感器损坏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
COTS CMOS active pixel sensors damage after alpha, thermal neutron, and gamma irradiation
This work compares the damage produced by alpha particles, thermal neutrons and gamma photons to Commercial-Off-The-Shelf CMOS image sensors. Image sensors were exposed to alpha particles from the decay of Uranium and Americium sources which caused permanent damage to pixels immediately after a particle hit. Similar failure mode was seen when sensors were exposed to thermal neutrons in the Neutron Imaging Facility of the RA-6 Nuclear research reactor, whereas no damage was seen after exposure to 137Cs gamma rays. Due to the similarity between alpha and thermal neutron effects, and since silicon transmutation by neutron capture is very unlikely, we conclude that the Boron-Phosphorous Silicate Glass (BPSG) on top of the silicon acts as a conversion layer producing charged particles which in turn cause damage to the sensor.
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