{"title":"0.5μm CMOS工艺中霍尔片的设计与表征","authors":"N. Ronis, M. Garcia-Inza","doi":"10.1109/CAMTA.2016.7574091","DOIUrl":null,"url":null,"abstract":"Four different N-well Hall Plate geometries were designed and fabricated in a 0.5μm CMOS process provided by MOSIS. Different shapes, sizes, contact distribution and dimensions were used in order to characterize Hall Plate sensitivity and resistance in a range of temperatures from -40°C up to 165°C. To remove the offset a four-phase current spinning method was used. The results show a better sensitivity performance in the cross-shaped whereas the small square shape has a slight improvement in the SNR behavior. The sensitivity of the different Hall Plate geometries was simulated using a model based on finite-element showing good agreement with the measurements.","PeriodicalId":108317,"journal":{"name":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design and characterization of Hall Plates in a 0.5μm CMOS process\",\"authors\":\"N. Ronis, M. Garcia-Inza\",\"doi\":\"10.1109/CAMTA.2016.7574091\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Four different N-well Hall Plate geometries were designed and fabricated in a 0.5μm CMOS process provided by MOSIS. Different shapes, sizes, contact distribution and dimensions were used in order to characterize Hall Plate sensitivity and resistance in a range of temperatures from -40°C up to 165°C. To remove the offset a four-phase current spinning method was used. The results show a better sensitivity performance in the cross-shaped whereas the small square shape has a slight improvement in the SNR behavior. The sensitivity of the different Hall Plate geometries was simulated using a model based on finite-element showing good agreement with the measurements.\",\"PeriodicalId\":108317,\"journal\":{\"name\":\"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAMTA.2016.7574091\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAMTA.2016.7574091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and characterization of Hall Plates in a 0.5μm CMOS process
Four different N-well Hall Plate geometries were designed and fabricated in a 0.5μm CMOS process provided by MOSIS. Different shapes, sizes, contact distribution and dimensions were used in order to characterize Hall Plate sensitivity and resistance in a range of temperatures from -40°C up to 165°C. To remove the offset a four-phase current spinning method was used. The results show a better sensitivity performance in the cross-shaped whereas the small square shape has a slight improvement in the SNR behavior. The sensitivity of the different Hall Plate geometries was simulated using a model based on finite-element showing good agreement with the measurements.