0.5μm CMOS工艺中霍尔片的设计与表征

N. Ronis, M. Garcia-Inza
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引用次数: 1

摘要

在MOSIS提供的0.5μm CMOS工艺中,设计并制作了四种不同几何形状的n阱霍尔板。使用不同的形状、尺寸、触点分布和尺寸来表征霍尔极板在-40°C至165°C温度范围内的灵敏度和电阻。为了消除偏置,采用了四相电流纺丝法。结果表明,十字形结构具有较好的灵敏度性能,而小方形结构的信噪比性能略有改善。采用基于有限元的模型对不同霍尔板几何形状的灵敏度进行了模拟,结果与实测结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and characterization of Hall Plates in a 0.5μm CMOS process
Four different N-well Hall Plate geometries were designed and fabricated in a 0.5μm CMOS process provided by MOSIS. Different shapes, sizes, contact distribution and dimensions were used in order to characterize Hall Plate sensitivity and resistance in a range of temperatures from -40°C up to 165°C. To remove the offset a four-phase current spinning method was used. The results show a better sensitivity performance in the cross-shaped whereas the small square shape has a slight improvement in the SNR behavior. The sensitivity of the different Hall Plate geometries was simulated using a model based on finite-element showing good agreement with the measurements.
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