69th Device Research Conference最新文献_第8页

Soft, curvilinear semiconductor devices for bio-integrated electronics 用于生物集成电子学的软曲线半导体器件

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994485

J. Rogers

引用次数: 0

A hybrid ferroelectric and charge nonvolatile memory 一种混合铁电和电荷非易失性存储器

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994474

S. Rajwade, K. Auluck, J. Shaw, K. Lyon, E. Kan

引用次数: 1

The effect of field effect device channel dimensions on the effective mobility of graphene 场效应器件沟道尺寸对石墨烯有效迁移率的影响

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994424

A. Venugopal, J. Chan, W. Kirk, L. Colombo, E. Vogel

{"title":"The effect of field effect device channel dimensions on the effective mobility of graphene","authors":"A. Venugopal, J. Chan, W. Kirk, L. Colombo, E. Vogel","doi":"10.1109/DRC.2011.5994424","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994424","url":null,"abstract":"Graphene is a possible candidate for post CMOS applications and mobility is a material characteristic that has been utilized to gauge the quality of the material[1]. Mobility of exfoliated graphene transferred on SiO2 has been reported to range from 2,000 to 25,000 cm2/V·s [1, 2]. The large variation is typically attributed to factors such as scattering by defects in the underlying substrate, residue from processing, charged impurity scattering and phonon scattering [3]. In most previous studies one of the primary assumptions made is that the mobility is independent of channel dimensions. In this study, we performed room temperature effective mobility measurements as a function of channel dimensions. The mobility exhibits clear channel length (Lch) and width (Wch) dependence and varies from less than 1,000 cm2/V·s to 7,000 cm2/V·s. Theoretical analysis of the conductivity (σ) in graphene devices as a function of Wch performed by Vasko et al [4]. is in agreement with our experimental results. Mobility values for back gated devices with well defined channel dimensions in literature [5] are seen to be consistent with the trend that we report here.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125593052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 隧道-场效应晶体管结构，由于隧道势垒的栅极调制增强而提高了性能

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994440

L. De Michielis, L. Lattanzio, P. Palestri, L. Selmi, A. Ionescu

引用次数: 44

Investigation on superlattice heterostructures for steep-slope nanowire FETs 陡坡纳米线场效应管的超晶格异质结构研究

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994497

E. Gnani, P. Maiorano, S. Reggiani, A. Gnudi, G. Baccarani

引用次数: 6

High-resolution temperature sensing with source-gated transistors 采用源门控晶体管的高分辨率温度传感

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994463

R. Sporea, J. Shannon, S. Silva

引用次数: 4

Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors 光学声子散射对超高速GaN晶体管性能极限的影响

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994529

T. Fang, Ronghua Wang, Guowang Li, H. Xing, S. Rajan, D. Jena

引用次数: 1

Observation of trap-assisted steep sub-threshold swing in schottky source/drain Al2O3/InAlN/GaN MISHEMT 捕集阱辅助下肖特基源/漏Al2O3/InAlN/GaN MISHEMT陡亚阈值摆动的观察

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994417

Qi Zhou, Hongwei Chen, Chunhua Zhou, Zhihong Feng, S. Cai, K. J. Chen

{"title":"Observation of trap-assisted steep sub-threshold swing in schottky source/drain Al2O3/InAlN/GaN MISHEMT","authors":"Qi Zhou, Hongwei Chen, Chunhua Zhou, Zhihong Feng, S. Cai, K. J. Chen","doi":"10.1109/DRC.2011.5994417","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994417","url":null,"abstract":"Devices with steep subthreshold swing (SS) are of great interest and significance in view of increasing subthreshold leakage current with the continuous MOSFET scaling. The standby power dissipation has grown due to the nonscalability of the SS to below 60 mV/dec at room temperature (RT). To circumvent this obstacle, novel devices that employ various turn-on mechanisms have been proposed1–4. In this work, we report the observation of steep SS∼20 mV/dec in Schottky source/drain (SSD) Al2O3/InAlN/GaN MIS-HEMTs over a drain bias range of 0.1 to 5 V. The devices also feature high ION/IOFF ratio (∼109) and appreciable current drive of IDmax=230 mA/mm at room temperature. The devices are also characterized at elevated temperature (T) up to 155 °C. Steep SS lower than the theoretical diffusion limit is consistently observed over the testing temperature range. It is suggested that the steep switching behavior is obtained through the means of a dynamic de-trapping process at the Al2O3/InAlN interface. The dynamic de-trapping enables a dynamic negative shift in the threshold voltage during the gate upswing and effectively facilitates the formation of a sub-threshold swing as steep as 18 mV/dec.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123805987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Combinational and sequential logic with transistors based on individual carbon nanotubes 基于单个碳纳米管的晶体管组合和顺序逻辑

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994477

H. Ryu, D. Kalblein, U. Zschieschang, O. Schmidt, H. Klauk

{"title":"Combinational and sequential logic with transistors based on individual carbon nanotubes","authors":"H. Ryu, D. Kalblein, U. Zschieschang, O. Schmidt, H. Klauk","doi":"10.1109/DRC.2011.5994477","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994477","url":null,"abstract":"Field-effect transistors (FETs) that utilize an individual semiconducting carbon nanotube (CNT) as the channel are potentially useful for the realization of logic circuits with high integration densities that can be fabricated on transparent, large-area substrates, such as glass or flexible plastics. While FETs based on individual CNTs have already demonstrated excellent static characteristics [1,2], the realization of logic circuits with good static and dynamic performance based on individual-CNT FETs remains a challenge. Bachtold et al. realized 2-input NOR gates by connecting p-channel CNT FETs to external load resistors using coaxial cables and reported a signal delay of 30 msec per stage for a 3-stage unipolar ring oscillator [3]. Javey et al. realized complementary 2-input NAND, AND, NOR and OR gates by connecting p- and n-channel CNT FETs using coaxial cables and measured a delay of 750 µsec for a 3-stage ring oscillator [4]. The only monolithically integrated circuit based transistors utilizing individual carbon nanotubes was reported by Chen et al. who measured a signal delay of 1.9 nsec per stage in a complementary ring oscillator realized on a very long (19 µm) carbon nanotube [5].","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122351363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Top-gated single-electron transistor in germanium nanowires 锗纳米线顶门控单电子晶体管

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994425

Sung-Kwon Shin, Shaoyun Huang, N. Fukata, K. Ishibashi

引用次数: 0