A. Venugopal, J. Chan, W. Kirk, L. Colombo, E. Vogel
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The effect of field effect device channel dimensions on the effective mobility of graphene
Graphene is a possible candidate for post CMOS applications and mobility is a material characteristic that has been utilized to gauge the quality of the material[1]. Mobility of exfoliated graphene transferred on SiO2 has been reported to range from 2,000 to 25,000 cm2/V·s [1, 2]. The large variation is typically attributed to factors such as scattering by defects in the underlying substrate, residue from processing, charged impurity scattering and phonon scattering [3]. In most previous studies one of the primary assumptions made is that the mobility is independent of channel dimensions. In this study, we performed room temperature effective mobility measurements as a function of channel dimensions. The mobility exhibits clear channel length (Lch) and width (Wch) dependence and varies from less than 1,000 cm2/V·s to 7,000 cm2/V·s. Theoretical analysis of the conductivity (σ) in graphene devices as a function of Wch performed by Vasko et al [4]. is in agreement with our experimental results. Mobility values for back gated devices with well defined channel dimensions in literature [5] are seen to be consistent with the trend that we report here.