69th Device Research Conference最新文献

Technical program committee 技术方案委员会

69th Device Research Conference Pub Date : 2018-09-01 DOI: 10.23919/eusipco.2018.8553324

Ruchi Misra, Chetan Kulkarni, Alok Kumar

引用次数: 0

Rump sessions 臀部会话

69th Device Research Conference Pub Date : 2018-06-01 DOI: 10.1109/drc.2009.5354881

K. Bernstein, M. Nagata, M.-R. Lin, Y. Omura, K. Sakamoto, J. Graham, K. Saraswat

引用次数: 0

III-nitride tunnel diodes with record forward tunnel current density 氮化隧道二极管具有创纪录的正向隧道电流密度

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.6086644

S. Krishnamoorthy, P. Park, S. Rajan

{"title":"III-nitride tunnel diodes with record forward tunnel current density","authors":"S. Krishnamoorthy, P. Park, S. Rajan","doi":"10.1109/DRC.2011.6086644","DOIUrl":"https://doi.org/10.1109/DRC.2011.6086644","url":null,"abstract":"We report on the design, fabrication, and characterization of the first interband tunnel junctions showing forward tunneling characteristics in the III-Nitride system. We have achieved record forward tunneling currents (>100 mA/cm2 at 10 mV, and > 10 A/cm2 peak current) using polarization engineered GaN/InGaN/GaN heterojunction diodes. We also report for the first time, negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio (PVCR) of up to 5 at room temperature, and 147 at low temperature. Interband tunnel junctions can be utilized to connect multiple active regions devices such as multiple active region emitters and multi junction solar cells, which require efficient reverse tunneling and forward tunneling respectively. Efficient inter-band tunneling has been a challenge in III-Nitrides mainly due to the large band gaps found in this material system, which reduce tunneling probability. Recently, the unique property of polarization in III-nitrides was used to engineer band bending over smaller distances in nitride heterostructures to enhance tunneling [1, 2, 3], and we recently demonstrated a p-GaN/InGaN/n-GaN backward diode with record current density of 118 A/ cm2 at a reverse bias of 1 V where a thin high indium composition InGaN well was used to enhance tunneling between GaN regions [3]. Tunnel junctions are a critical component of multiple junction solar cells, and there is an interest to exploit the large band gap range of III-nitrides in such devices. However, such an application would require forward, rather than reverse tunnel diodes. In this work, we use polarization engineering to design and demonstrate the inter-band forward tunneling diodes with the high current density and low forward voltage drop.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115134599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Devices for high performance computing beyond 14nm node - is there anything other than Si? 14nm节点以上的高性能计算设备——除了Si，还有其他的吗?

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994486

W. Haensch

引用次数: 2

130nm InP DHBTs with ft >0.52THz and fmax >1.1THz 130nm InP dhbt, ft >0.52THz, fmax >1.1THz

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994532

M. Urteaga, R. Pierson, P. Rowell, V. Jain, E. Lobisser, M. Rodwell

{"title":"130nm InP DHBTs with ft >0.52THz and fmax >1.1THz","authors":"M. Urteaga, R. Pierson, P. Rowell, V. Jain, E. Lobisser, M. Rodwell","doi":"10.1109/DRC.2011.5994532","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994532","url":null,"abstract":"We report results from a 130nm Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. A 0.13×2µm2 transistor exhibits a current gain cutoff frequency ft >520GHz, with a simultaneous extrapolated power gain cutoff frequency f<inf>max</inf>>1.1THz. The HBTs exhibit these RF figures-of-merit while maintaining a common-emitter breakdown voltage BV<inf>CEO</inf>=3.5V (J<inf>E</inf>=10µA/µm2). Additionally, scaling of the emitter junction length to 2µm enables high device performance at low total power levels. Transistors in the InGaAs/InP material system have demonstrated the highest reported transistor RF figures-of-merit. Previous published results include strained-InGaAs channel high-electron mobility transistors (HEMTs) with f<inf>max</inf> of >1THz [1,2], and InP DHBTs with f<inf>max</inf> >800GHz [3]. High bandwidth DHBTs have applications in a number of RF and mixed-signal applications due to their high power handling and high levels of integration relative to HEMTs. The HBTs reported in this work are designed for transceiver applications at the lower end of the THz frequency band [0.3–3 THz].","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117348389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 87

Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs 自对准InAs/Al0.45Ga0.55Sb垂直隧道场效应管

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994499

Guangle Zhou, Y. Lu, R. Li, Q. Zhang, W. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing

引用次数: 16

Protein nanopore-gated bio-transistor for membrane ionic current recording 用于膜离子电流记录的蛋白质纳米孔控生物晶体管

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994451

Tae-Sun Lim, D. Jain, P. Burke

引用次数: 6

The nanoelectronic modeling tool NEMO 5: Capabilities, validation, and application to Sb-heterostructures 纳米电子建模工具NEMO 5: sb异质结构的能力、验证和应用

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994404

S. Steiger, M. Povolotskyi, Hong-hyun Park, T. Kubis, G. Hegde, B. Haley, M. Rodwell, Gerhard Klimeck

引用次数: 5

Experimental determination of dominant scattering mechanisms in scaled InAsSb quantum well 尺度InAsSb量子阱中主要散射机制的实验测定

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994405

A. Agrawal, A. Ali, R. Misra, P. Schiffer, B. R. Bennett, J. B. Boos, S. Datta

{"title":"Experimental determination of dominant scattering mechanisms in scaled InAsSb quantum well","authors":"A. Agrawal, A. Ali, R. Misra, P. Schiffer, B. R. Bennett, J. B. Boos, S. Datta","doi":"10.1109/DRC.2011.5994405","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994405","url":null,"abstract":"Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1]. A Mixed anion InAs<inf>y</inf>Sb<inf>1−y</inf> quantum well heterostructure with high electron mobility of 13,300 cm2/Vs has already been demonstrated at a sheet carrier density of 2×1012 /cm2, albeit for a thick EOT quantum well (QW) structure [2]. A thin EOT structure is desired for improving short channel effects while maintaining the high electron mobility in the QW. In this paper, we study the low field electron transport properties in the high mobility InAs<inf>0.8</inf>Sb<inf>0.2</inf> quantum well as we scale the QW heterostructure. Fig. 1(a),(b) show the schematic of the thick (T<inf>QW</inf>=12nm) and scaled (T<inf>QW</inf>=7.5nm) quantum well FET structure using InAs<inf>0.8</inf>Sb<inf>0.2</inf> as channel material, In<inf>0.2</inf>Al<inf>0.8</inf>Sb barrier layer and an ultra-thin GaSb surface layer for avoiding surface oxidation of Al in the barrier [2]. Fig. 2(a),(b) show the simulated energy band diagram of the two structures using self-consistent Schrodinger-Poisson simulation, indicating strong electron confinement in the QW. The effect of nonparabolicity on thick QW with T<inf>QW</inf>=12nm has already been studied and an effective mass (m*) of 0.043m<inf>0</inf> has been extracted experimentally [3]. For scaled QW the subband spacing was adjusted in order to achieve electron sheet charge density as a function of temperature, and the extracted density of states m*=0.05m<inf>0</inf> was correlated to the transport effective mass. Experimental work to verify the obtained effective mass for scaled QW is underway.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129852257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Creating dynamic nanowire devices using wrapped gates 使用封装门创建动态纳米线器件

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994436

K. Storm, G. Nylund, M. Borgstrom, J. Wallentin, C. Fasth, C. Thelander, L. Samuelson

引用次数: 0