69th Device Research Conference最新文献_第2页

Total GaN solution to electrical power conversion 电力转换的总氮化镓解决方案

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994505

Y. Wu, R. Coffie, N. Fichtenbaum, Y. Dora, C. Suh, L. Shen, P. Parikh, U. Mishra

引用次数: 29

Monolayer MoS2 transistors - ballistic performance limit analysis 单层MoS2晶体管-弹道性能极限分析

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994421

K. Ganapathi, Y. Yoon, S. Salahuddin

引用次数: 1

Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate 电泵浦集成III/V激光晶格与硅衬底相匹配

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994521

B. Kunert, S. Liebich, M. Zimprich, A. Beyer, S. Ziegler, K. Volz, W. Stolz, N. Hossain, S. Jin, S. Sweeney

引用次数: 1

Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs 单轴拉伸应变蓄能型栅极全能硅纳米线nmosfet

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994458

M. Najmzadeh, D. Bouvet, W. Grabinski, A. Ionescu

引用次数: 4

Synthesis and applications of graphene for flexible electronics 柔性电子材料石墨烯的合成与应用

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994410

B. Hong

引用次数: 4

Electrochemical supercapacitor based on flexible pillar graphene nanostructures 基于柔性柱状石墨烯纳米结构的电化学超级电容器

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994429

Jian Lin, J. Zhong, Duoduo Bao, Jennifer Reiber-kyle, W. Wang, V. Vullev, M. Ozkan, C. Ozkan

引用次数: 2

Modeling of dielectric breakdown-induced time-dependent STT-MRAM performance degradation 介电击穿引起的随时间变化的STT-MRAM性能退化建模

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994447

G. Panagopoulos, C. Augustine, K. Roy

{"title":"Modeling of dielectric breakdown-induced time-dependent STT-MRAM performance degradation","authors":"G. Panagopoulos, C. Augustine, K. Roy","doi":"10.1109/DRC.2011.5994447","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994447","url":null,"abstract":"In recent years, spin-transfer torque magnetoresistive random access memory (STT-MRAM) has gained a lot of interest as a promising memory candidate for future embedded applications. STT-MRAM possesses desirable memory attributes such as excellent readability, writability, stability, non-volatility, and unlimited endurance. Moreover, ITRS reports that STT-MRAM can endure 1015 cycle operations before breakdown [1] thus meeting 10 yrs life-time. As shown in Fig. 1, STT-MRAM bitcell consists of one access transistor and one magnetic tunnel junction (MTJ) (1T-1R). One of the primary reliability concerns in STT-MRAM is the dielectric breakdown of the tunnel junction MgO in the MTJ known as time-dependent dielectric breakdown (TDDB). The thickness of MgO is on the order of 1nm and the voltage across the MTJ during write operation is approximately 0.7V resulting in electric field of ∼10MV/cm across it which can induce TDDB [2–3]. Thus, such high stress conditions can lead to lower breakdown time (TBD) which can go even lower with further MgO thickness scaling. In addition to the hard breakdown (HBD) in MTJ which results in very low MTJ impedance and inability to function as memory, experimental results show that soft breakdowns (SBD) also exists [7,8]. SBDs cause minor degradation in the MTJ resistance and they have shorter average time to appear compared to HBDs. In this paper, we explore in detail the physical mechanism behind both HBD and SBD, and using percolation model we estimate the time dependent degradation in the MTJ performance parameters such as tunneling magneto-resistance (TMR), write current (JC), write-time (TWR) and lifetime (TLIFE).","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116788658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 46

Improvement of efficiency in inverted bottom-emission white OLEDs by doping the hole transport layer 掺杂空穴输运层提高反向底发射白色oled的效率

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994431

Hyunkoo Lee, Jeonghun Kwak, Jaehoon Lim, K. Char, Seonghoon Lee, Changhee Lee

{"title":"Improvement of efficiency in inverted bottom-emission white OLEDs by doping the hole transport layer","authors":"Hyunkoo Lee, Jeonghun Kwak, Jaehoon Lim, K. Char, Seonghoon Lee, Changhee Lee","doi":"10.1109/DRC.2011.5994431","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994431","url":null,"abstract":"Recently, it is a critical issue to make larger display panels with low costs in organic light-emitting diodes (OLEDs). However, the uniformity and the cost of low temperature poly Si (LTPS) thin film transistors (TFTs) based backplanes for driving panels as well as the fine metal mask for pixel-patterning obstruct the realization of large-size OLED displays. To overcome these problems, using amorphous silicon (a-Si) TFTs which have high uniformity and cost-efficiency as the backplanes and white OLEDs (WOLEDs) which do not requiring any fine metal mask have been suggested previously. The inverted structure of OLEDs is much suitable rather than the conventional structure for a-Si TFTs because most a-Si TFTs have n-type channel.[1] Here, we demonstrate highly efficient inverted bottom-emission WOLEDs by controlling the balance of electrons and holes injected from electrodes. The maximum external quantum efficiency (E.Q.E.) of inverted WOLEDs was increased from 6.4% to 8.6% (about 34% improvement). To the best of our knowledge, this value is the highest E.Q.E. without other optical light extraction techniques in inverted WOLEDs reported to date.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122152762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Complementary-type graphene inverters operating at room-temperature 在室温下工作的互补型石墨烯逆变器

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994408

Hong-Yan Chen, J. Appenzeller

引用次数: 11

Voltage-controlled spin-wave-based logic gate 基于自旋波的电压控制逻辑门

69th Device Research Conference Pub Date : 2011-06-20 DOI: 10.1109/DRC.2011.5994464

Tian-shi Liu, G. Vignale

{"title":"Voltage-controlled spin-wave-based logic gate","authors":"Tian-shi Liu, G. Vignale","doi":"10.1109/DRC.2011.5994464","DOIUrl":"https://doi.org/10.1109/DRC.2011.5994464","url":null,"abstract":"Spin wave spintronics (also known as magnonics) processes information by propagating spin waves with no charge displaced. Because dissipation is thus minimized this is rapidly becoming an important subject of research within the larger area of spintronics. The logic states in magnonic circuitry can be defined either by the phase or by the amplitude of the spin wave. In both cases, a π-phase shifter plays a crucial role in performing logical operations. The first spin wave logic gate was experimentally demonstrated by Kostylev et al 1. They utilized an inhomogeneous magnetic field to control the phase difference between spin waves propagating in different arms of a Mach-Zehnder interferometer -and thus the amplitude of the output spin wave. Later, Schneider et al 2 and Lee et al 3 developed a complete set of logic gates such as NOR, XOR and AND, based on spin wave interferometry. However, all of theses gates are controlled by a current-induced magnetic field. As the devices shrink down, π-phase shift requires a larger electric current to induce stronger magnetic field, which inevitably increases the power-loss. Therefore, voltage-controlled spin wave electronics becomes an attractive alternative avenue towards nano-scale magnonics, where exchange spin waves are of primary interest.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129328680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0