{"title":"High breakdown voltage ZnMgO/In-Ga-Zn-O heterostructure transistors","authors":"J. Yamaguchi, I. Soga, T. Iwai","doi":"10.1109/DRC.2011.5994460","DOIUrl":null,"url":null,"abstract":"ZnO-based semiconductors with the wide-band gap have attracted great interest for electronic and optical applications [1]. Among them, an amorphous In-Ga-Zn-O (a-IGZO) has been intensively studied [2,3]. The thin-film transistors using of a-IGZO as an active n-channel layer exhibit good performances such as the high field-effect mobility [μ<inf>FE</inf> ∼ 10 cm<sup>2</sup> (Vs)<sup>−1</sup>], I<inf>on</inf>/I<inf>off</inf> ratio of ∼10<sup>8</sup>, and excellent process stability, even when the channel layer was deposited at room temperature (RT). The band gap of a-IGZO was estimated to E<inf>g</inf> = 3.1–3.4 eV from several spectroscopic techniques [4], which is a promising candidate for high voltage applications such as switching devices for power supplies. Moreover, a-IGZO films have the high uniformity in large area owing to the amorphous character, which results in low-cost fabrication.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
ZnO-based semiconductors with the wide-band gap have attracted great interest for electronic and optical applications [1]. Among them, an amorphous In-Ga-Zn-O (a-IGZO) has been intensively studied [2,3]. The thin-film transistors using of a-IGZO as an active n-channel layer exhibit good performances such as the high field-effect mobility [μFE ∼ 10 cm2 (Vs)−1], Ion/Ioff ratio of ∼108, and excellent process stability, even when the channel layer was deposited at room temperature (RT). The band gap of a-IGZO was estimated to Eg = 3.1–3.4 eV from several spectroscopic techniques [4], which is a promising candidate for high voltage applications such as switching devices for power supplies. Moreover, a-IGZO films have the high uniformity in large area owing to the amorphous character, which results in low-cost fabrication.