Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

69th Device Research Conference Pub Date : 2011-06-20 DOI:10.1109/DRC.2011.5994458

M. Najmzadeh, D. Bouvet, W. Grabinski, A. Ionescu

引用次数: 4

Abstract

In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ∼400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.

查看原文本刊更多论文

单轴拉伸应变蓄能型栅极全能硅纳米线nmosfet

本文报道了一种基于单轴拉伸应变的硅纳米线的积累模式(AM)栅极全能(GAA) nmosfet的实验研究。研究了它们在室温至~ 400 K范围内的电特性，提取并研究了载流子迁移率、平带和阈值电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

69th Device Research Conference

自引率

0.00%

发文量