电泵浦集成III/V激光晶格与硅衬底相匹配

69th Device Research Conference Pub Date : 2011-06-20 DOI:10.1109/DRC.2011.5994521

B. Kunert, S. Liebich, M. Zimprich, A. Beyer, S. Ziegler, K. Volz, W. Stolz, N. Hossain, S. Jin, S. Sweeney

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引用次数: 1

摘要

硅基集成电路(ic)和微电子学的巨大发展是基于半导体器件的小型化。然而，这种驱动力正在接近基本限制，因此需要新技术来保证集成电路功能的未来进步。

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Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate

The enormous development of Silicon (Si) based integrated circuits (ICs) and micro-electronics is based on the downscaling of semiconductor devices. This driving force, however, is approaching fundamental limitations and therefore new technologies are necessary to guarantee future progress in IC functionalities.

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69th Device Research Conference

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