{"title":"单轴拉伸应变蓄能型栅极全能硅纳米线nmosfet","authors":"M. Najmzadeh, D. Bouvet, W. Grabinski, A. Ionescu","doi":"10.1109/DRC.2011.5994458","DOIUrl":null,"url":null,"abstract":"In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ∼400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs\",\"authors\":\"M. Najmzadeh, D. Bouvet, W. Grabinski, A. Ionescu\",\"doi\":\"10.1109/DRC.2011.5994458\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ∼400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994458\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ∼400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.
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