Guangle Zhou, Y. Lu, R. Li, Q. Zhang, W. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing
{"title":"Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs","authors":"Guangle Zhou, Y. Lu, R. Li, Q. Zhang, W. Hwang, Q. Liu, T. Vasen, H. Zhu, J. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. Xing","doi":"10.1109/DRC.2011.5994499","DOIUrl":null,"url":null,"abstract":"Tunnel field-effect transistors (TFETs) are under intense investigation for low-power applications because of their potential for extremely low subthreshold swing (SS) and low off-state leakage [1]. III–V semiconductors with small effective mass and near broken band alignment are considered to be ideal for TFETs in that they promise high on-current and I<inf>ON</inf>/I<inf>OFF</inf> ratios [2–3]. In this paper, we report the first demonstration of an InAs/Al<inf>0.45</inf>Ga<inf>0.55</inf>Sb heterojunction TFETs fabricated using an optical-lithography-only, self-aligned process and also investigate the effects limiting the InAs/Al<inf>0.45</inf>Ga<inf>0.55</inf>Sb TFET performance.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
Tunnel field-effect transistors (TFETs) are under intense investigation for low-power applications because of their potential for extremely low subthreshold swing (SS) and low off-state leakage [1]. III–V semiconductors with small effective mass and near broken band alignment are considered to be ideal for TFETs in that they promise high on-current and ION/IOFF ratios [2–3]. In this paper, we report the first demonstration of an InAs/Al0.45Ga0.55Sb heterojunction TFETs fabricated using an optical-lithography-only, self-aligned process and also investigate the effects limiting the InAs/Al0.45Ga0.55Sb TFET performance.