Sung-Kwon Shin, Shaoyun Huang, N. Fukata, K. Ishibashi
{"title":"Top-gated single-electron transistor in germanium nanowires","authors":"Sung-Kwon Shin, Shaoyun Huang, N. Fukata, K. Ishibashi","doi":"10.1109/DRC.2011.5994425","DOIUrl":null,"url":null,"abstract":"Germanium nanowires (GeNWs) of the group IV semiconductors could be one of the attractive candidates for electron-spin based quantum devices because of their long electron-spin coherence time. Besides, Ge has an advantage over Si in terms of the larger quantum effects due to the smaller effective mass. Single-electron transistors (SETs) are basic building blocks of such devices. To define the spin configuration in the dot, it is necessary to reach a few-electron regime or an even-odd regime where the single spin is realized for the odd number of electrons in the dot. So far, we have developed processes to fabricate SETs using n-type monocrystalline GeNWs with a back gate, and succeeded in observing the even-odd effect [1]. In this work, we have developed fabrication processes of the top-gate SETs to enhance the gating efficiency, and succeeded in reaching a few-electron regime.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Germanium nanowires (GeNWs) of the group IV semiconductors could be one of the attractive candidates for electron-spin based quantum devices because of their long electron-spin coherence time. Besides, Ge has an advantage over Si in terms of the larger quantum effects due to the smaller effective mass. Single-electron transistors (SETs) are basic building blocks of such devices. To define the spin configuration in the dot, it is necessary to reach a few-electron regime or an even-odd regime where the single spin is realized for the odd number of electrons in the dot. So far, we have developed processes to fabricate SETs using n-type monocrystalline GeNWs with a back gate, and succeeded in observing the even-odd effect [1]. In this work, we have developed fabrication processes of the top-gate SETs to enhance the gating efficiency, and succeeded in reaching a few-electron regime.