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Model of Process and Calculation of Energy for a Heat Generation of a Welded Joint at Ultrasonic Welding Polymeric Thermoplastic Materials 超声焊接聚合物热塑性材料焊接接头产热过程模型及能量计算
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292995
V. Khmelev, A. N. Slivin, A. D. Abramov
{"title":"Model of Process and Calculation of Energy for a Heat Generation of a Welded Joint at Ultrasonic Welding Polymeric Thermoplastic Materials","authors":"V. Khmelev, A. N. Slivin, A. D. Abramov","doi":"10.1109/SIBEDM.2007.4292995","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292995","url":null,"abstract":"In article results calculation of energy the ultrasonic vibrations disseminated in a welding zone of thermoplastic materials in view of reflecting and passing properties of borders welded materials, support and the working tool of oscillatory system are presented. Dependence of time necessary for bonding of materials, in view of properties, thickness, amplitude, frequency of ultrasonic welding is certain. The found criterion definition quantity of energy injected in a welding zone and time of ultrasonic influence is recommended to be used for management of ultrasonic welding process and for formation of qualitative welded connection thermoplastic materials.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116218008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Nano-Pattering on the Basis of Germanium Compositions Using Scanning Probe Microscopy 基于扫描探针显微镜的锗成分纳米图案化
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292918
K. Astankova, E. B. Gorokhov, D. Sheglov, V. Volodin, A. Latyshev, A. L. Aseev
{"title":"Nano-Pattering on the Basis of Germanium Compositions Using Scanning Probe Microscopy","authors":"K. Astankova, E. B. Gorokhov, D. Sheglov, V. Volodin, A. Latyshev, A. L. Aseev","doi":"10.1109/SIBEDM.2007.4292918","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292918","url":null,"abstract":"The possibility of formation of Ge-based nanowires with lateral resolution up to several nanometers using modification of GeO films by scanning probe microscope was demonstrated for the first time. The main advantage of used germanium monoxide films is its meta-stability and decomposition on Ge and GeO2 under impact of atomic force microscope probe.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"296 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116363292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research of Ultrasonic Drying Process in Dryers of Ventilation Type 通风式干燥机超声干燥工艺研究
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292976
V. Khmelev, I. I. Savin, D. Abramenko, S. N. Tsyganok, R. Barsukov, D. V. Genne, A. Lebedev
{"title":"Research of Ultrasonic Drying Process in Dryers of Ventilation Type","authors":"V. Khmelev, I. I. Savin, D. Abramenko, S. N. Tsyganok, R. Barsukov, D. V. Genne, A. Lebedev","doi":"10.1109/SIBEDM.2007.4292976","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292976","url":null,"abstract":"In article are presented results of the researches guided on a increasing of efficiency and decrease of power consumption of dryers of ventilation type by adding in constructive scheme of radiators of ultrasonic oscillations of high intensity.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127246388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monitoring of Ultrasonic Generators Parameters for Definition of Optimal Modes of Ultrasonic Influence on Different Medium 超声发生器参数监测，确定超声在不同介质下的最佳模态
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292977
V. Khmelev, R. Barsukov, D. Abramenko, D. V. Genne
{"title":"Monitoring of Ultrasonic Generators Parameters for Definition of Optimal Modes of Ultrasonic Influence on Different Medium","authors":"V. Khmelev, R. Barsukov, D. Abramenko, D. V. Genne","doi":"10.1109/SIBEDM.2007.4292977","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292977","url":null,"abstract":"This article is devoted to making and usage of a specialized measuring complex for speed up of adjustment and diagnostic process of ultrasonic generators. The results of usage of a complex on specific targets are presented.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131459706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fabrication of Polycrystalline 3C-SiC Microstructures 多晶3C-SiC微结构的制备
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292896
C. Ohn, Jong-Hwa Lee, G. Chung
{"title":"Fabrication of Polycrystalline 3C-SiC Microstructures","authors":"C. Ohn, Jong-Hwa Lee, G. Chung","doi":"10.1109/SIBEDM.2007.4292896","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292896","url":null,"abstract":"Magnetron reactive ion etching (RIE) characteristic of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates are presented. The magnetron RIE can stably etch the poly 3C-SiC thin films at a lower ion energy (70 W) without any damages than the commercial RIE system. The best vertical structure was improved by the addition of 40% O2 and 16% Ar with the CHF3 reactive gas.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129530351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Semiconductor Nanoelectronics in Institute of Semiconductor Physics SB RAS 中科院半导体物理研究所实验半导体纳米电子学
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292975
I. Neizvestny
{"title":"Experimental Semiconductor Nanoelectronics in Institute of Semiconductor Physics SB RAS","authors":"I. Neizvestny","doi":"10.1109/SIBEDM.2007.4292975","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292975","url":null,"abstract":"This paper deals with the technologies in Institute of Semiconductor Physics SB RAS which are the preparation of initial nanometer size thickness structures (substrates ) by molecular beam epitaxy method (MBE) and silicon on insulator (SOI) method, the methods forming of nanometer size lateral structures by electron beam lithography and atomic force microscopy, and the methods forming three dimensions nanostructures (nanotubes) by self-scrolling highly strained heterolayers.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122226018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Limited-Small Single-Contact Photodetector of Visible Range with Vertical Colour Division Integrated into Infrared Photodetector Cell Gap 将垂直分色集成到红外探测器单元间隙中的可见光范围有限小单触点光电探测器的仿真
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292930
E. B. Volodin, E. A. Ignatjeva, V. V. Uzdovskii
{"title":"Simulation of Limited-Small Single-Contact Photodetector of Visible Range with Vertical Colour Division Integrated into Infrared Photodetector Cell Gap","authors":"E. B. Volodin, E. A. Ignatjeva, V. V. Uzdovskii","doi":"10.1109/SIBEDM.2007.4292930","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292930","url":null,"abstract":"This article represents the results of simulation of bulk integrated, minimized in size photosensitive cells with bulk colour division (R, G, B) of the visible spectral range, having one terminal displaced, due to the absence of the area, together with transistors of reading circuits (and partially under them) in gaps of infrared detector cells into CMOS structure. Single-contact three-color cell has an additional channel through which photodiodes may exchange current carriers due to the appropriate voltage applied to the surface contact and common for all the cells base and thus transfers accumulated charges to reading circuits.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"249 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123477880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Intensity Ultrasonic Transducers for Gas Media 用于气体介质的高强度超声换能器
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292988
I. I. Savin, S. N. Tsyganok, A. Lebedev, D. Abramenko
{"title":"High Intensity Ultrasonic Transducers for Gas Media","authors":"I. I. Savin, S. N. Tsyganok, A. Lebedev, D. Abramenko","doi":"10.1109/SIBEDM.2007.4292988","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292988","url":null,"abstract":"In article is devoted to different type piezoelectric stepped-plate radiators for gas media.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"11646 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123524982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Image Stitching Under Projective and Nonlinear Distortion 投影和非线性畸变下的图像拼接
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292949
S. Nikitin, I. S. Gruzman
{"title":"Image Stitching Under Projective and Nonlinear Distortion","authors":"S. Nikitin, I. S. Gruzman","doi":"10.1109/SIBEDM.2007.4292949","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292949","url":null,"abstract":"Due to the nonlinear distortion of camera lens system, projective transformation parameters will be estimated incorrectly. For this reason the images stitching result may have a lot of misregistrations. In general the problem of simultaneous estimation of projective and nonlinear distortion parameters is nonlinear relative to twelve variables which is very laborious and may have several local extremes. This paper offers technique which gives an ability to proceed from 12 variables minimization to 2 variables minimization.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125101474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Surface Recombination and Charge Carriers Generation by Radiations in MBE p-HgCdTe Films with Graded-Gap Near-Border Layers 带梯度隙近边界层的MBE p-HgCdTe薄膜的表面复合和辐射产生载流子
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292906
D. Protasov, V. Kostuchenko
{"title":"Surface Recombination and Charge Carriers Generation by Radiations in MBE p-HgCdTe Films with Graded-Gap Near-Border Layers","authors":"D. Protasov, V. Kostuchenko","doi":"10.1109/SIBEDM.2007.4292906","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292906","url":null,"abstract":"The behavior of excess electron-holes gas in crossed electric and magnetic fields in multilayers structures p-HgCdTe with graded-gap near-border layers is described. In near-border layers a cadmium mole fraction xCd is increased from central party of structures to its borders. It was obtained, that the multilayers structure can be reduced to homogeneous film by using of effective surface recombination velocities and surface generation rate.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128659340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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