Experimental Semiconductor Nanoelectronics in Institute of Semiconductor Physics SB RAS

Abstract

This paper deals with the technologies in Institute of Semiconductor Physics SB RAS which are the preparation of initial nanometer size thickness structures (substrates ) by molecular beam epitaxy method (MBE) and silicon on insulator (SOI) method, the methods forming of nanometer size lateral structures by electron beam lithography and atomic force microscopy, and the methods forming three dimensions nanostructures (nanotubes) by self-scrolling highly strained heterolayers.