多晶3C-SiC微结构的制备

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292896

C. Ohn, Jong-Hwa Lee, G. Chung

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引用次数: 0

摘要

研究了在热氧化硅衬底上生长的多晶(poly) 3C-SiC薄膜的磁控管反应离子刻蚀(RIE)特性。与商用RIE系统相比，该系统可以在较低的离子能量(70 W)下稳定地蚀刻聚3C-SiC薄膜。在CHF3反应气体中加入40%的O2和16%的Ar，可以得到最佳的垂直结构。

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Fabrication of Polycrystalline 3C-SiC Microstructures

Magnetron reactive ion etching (RIE) characteristic of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates are presented. The magnetron RIE can stably etch the poly 3C-SiC thin films at a lower ion energy (70 W) without any damages than the commercial RIE system. The best vertical structure was improved by the addition of 40% O2 and 16% Ar with the CHF3 reactive gas.

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来源期刊

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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