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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials最新文献

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The Influence of Wave Propagation Channel Properties on Error Probability 波传播信道特性对误差概率的影响
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292946
A. G. Vostretsov, A. S. Pavlov
{"title":"The Influence of Wave Propagation Channel Properties on Error Probability","authors":"A. G. Vostretsov, A. S. Pavlov","doi":"10.1109/SIBEDM.2007.4292946","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292946","url":null,"abstract":"The error probability of radio short-range navigation systems (KSNS) in a various propagation environments is considered. Basic and modified structure of the KSNS in various propagation environments is investigated. The modified signal structure for increasing transfer rate of the channel has been developed.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129882559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Research of Substrate Carrier Injection Mechanism in Digital Integrated Elements 数字集成元件中基片载流子注入机理研究
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292920
T. Krupkina, D. Rodionov
{"title":"Research of Substrate Carrier Injection Mechanism in Digital Integrated Elements","authors":"T. Krupkina, D. Rodionov","doi":"10.1109/SIBEDM.2007.4292920","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292920","url":null,"abstract":"In this paper substrate carrier injection mechanism and related effects were explored for single device and simple digital element.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128996567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Analysis of Parameters of Frequency Modulation with Minimal Shift Keying 最小移位键控调频参数分析
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292957
A. V. Mikushin, A.M. Shingarev
{"title":"The Analysis of Parameters of Frequency Modulation with Minimal Shift Keying","authors":"A. V. Mikushin, A.M. Shingarev","doi":"10.1109/SIBEDM.2007.4292957","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292957","url":null,"abstract":"In this work is the basic of frequency modulation with minimal shift keying (MSK) are considered. The time diagrams of the frequency variation and a phase of the modulated oscillation are resulted. In the chase of research the method of the mathematical analysis has been applied.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124413235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of Ionic Conductivity Dielectric with Non-uniform Blocking Surface 非均匀阻挡面介质离子电导率的建模
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292935
G.V. Perov, A.A. Shauerman
{"title":"Modeling of Ionic Conductivity Dielectric with Non-uniform Blocking Surface","authors":"G.V. Perov, A.A. Shauerman","doi":"10.1109/SIBEDM.2007.4292935","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292935","url":null,"abstract":"The one-dimensional model of ionic conductivity in dielectric layers with a non-uniform blocking surface of the semiconductor with specified geometrical horizontal structure is developed. The model is based on the results of research of a relaxation of ions in dielectric on polycrystalline silicon and allows predicting behavior of ions depending on a roughness of border.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124565404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Software for Silicon Ingots Parameters Measuring Equipment 硅锭参数测量设备软件
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4293005
V. Anishchik
{"title":"Software for Silicon Ingots Parameters Measuring Equipment","authors":"V. Anishchik","doi":"10.1109/SIBEDM.2007.4293005","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4293005","url":null,"abstract":"Modernization of software for non- equilibrium charge carrier lifetime in silicon ingots measuring equipment was implemented. Reliability and speed of measuring system were increased. New methods of lifetime calculation were added. Software features were expanded.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115616520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fault Simulation and Diagnostics in Generating System for Aircraft 飞机发电系统故障仿真与诊断
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292938
N.V. Bedina
{"title":"Fault Simulation and Diagnostics in Generating System for Aircraft","authors":"N.V. Bedina","doi":"10.1109/SIBEDM.2007.4292938","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292938","url":null,"abstract":"It is obvious, that diagnostics and prognostics of the future condition of various technical systems in aviation has special value [1]. The theoretical analysis and results of faults simulation of generating system for aircraft, and also an estimation of faults influence for system work are submitted in the given work. MATLAB/SIMULINK software package is used as simulation instrument. The received results will be used for diagnostic system of generating system (GS) and prognostic of possible faults.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"401 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123391233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of GaAs/InGaAs Micro- and Nano- Tubes by Means of Scanning Probe Lithography 扫描探针光刻技术制备GaAs/InGaAs微纳管
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292904
A. Prinz, J.A. Melkonyan, V. Seleznev
{"title":"Fabrication of GaAs/InGaAs Micro- and Nano- Tubes by Means of Scanning Probe Lithography","authors":"A. Prinz, J.A. Melkonyan, V. Seleznev","doi":"10.1109/SIBEDM.2007.4292904","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292904","url":null,"abstract":"The aim of this work was to fabricate, by means of scanning probe lithography, semiconductor micro- and nanotubes from strained GaAs/InGaAs- based film heterostructures. Using scanning probe lithography, micro- and nanotubes were obtained. It was shown possible to oxidize structures thicker than 100 nm through their entire thickness using local anodic oxidation. An advantage of local anodic oxidation is that this technique requires no resist to be used, leaving microstructures formed at previous process stages intact and therefore allowing repeated lithographic steps to be performed on one structure.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125053996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanism of Hightemperature Phase Formation in HxLi1-xMO3 (M = Nb, Ta) Optical Waveguide Layers HxLi1-xMO3 (M = Nb, Ta)光波导层高温相形成机理
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292913
I. Kalabin, V. Atuchin
{"title":"Mechanism of Hightemperature Phase Formation in HxLi1-xMO3 (M = Nb, Ta) Optical Waveguide Layers","authors":"I. Kalabin, V. Atuchin","doi":"10.1109/SIBEDM.2007.4292913","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292913","url":null,"abstract":"Physical mechanisms of high temperature metastable state formation in proton-exchanged lithium niobate and lithium tantalate layers are discussed. The decay processes of high temperature states to equilibrium states are traced in experiment for several equilibrium phase intervals.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129413306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of the Method of Manufacture and Ultrasonic Welding of Geo-grids from Thermoplastics 热塑性地工格栅制造及超声焊接方法的发展
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4292994
V. Khmelev, A.N. SIivin, A. D. Abramov, S. N. Tsyganok
{"title":"Development of the Method of Manufacture and Ultrasonic Welding of Geo-grids from Thermoplastics","authors":"V. Khmelev, A.N. SIivin, A. D. Abramov, S. N. Tsyganok","doi":"10.1109/SIBEDM.2007.4292994","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4292994","url":null,"abstract":"In article results of development of a new method of manufacturing of the geo-grids based on ultrasonic welding thermoplastics are resulted. For practical realization of a method the specialized ultrasonic equipment is created, allowing optimizing process formation of welded connections with necessary' durability due to realization of the continuous control of parameters of welded materials and automatic control of process ultrasonic influences.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121010401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The Program for Power Calculation OED of the Spectral Attitude for Various Types of Emitters and Radiation detectors 各种类型发射体和辐射探测器的光谱姿态功率计算程序
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI: 10.1109/SIBEDM.2007.4293001
E.V. Baryshnikova, S. Terentiev, A. Pavlov, E. V. Sypin, G. Leonov
{"title":"The Program for Power Calculation OED of the Spectral Attitude for Various Types of Emitters and Radiation detectors","authors":"E.V. Baryshnikova, S. Terentiev, A. Pavlov, E. V. Sypin, G. Leonov","doi":"10.1109/SIBEDM.2007.4293001","DOIUrl":"https://doi.org/10.1109/SIBEDM.2007.4293001","url":null,"abstract":"In paper surveyed the program for energy calculation OED of the spectral attitude for various types of emitters and radiation detectors.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"20 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121217835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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