{"title":"Software for Silicon Ingots Parameters Measuring Equipment","authors":"V. Anishchik","doi":"10.1109/SIBEDM.2007.4293005","DOIUrl":null,"url":null,"abstract":"Modernization of software for non- equilibrium charge carrier lifetime in silicon ingots measuring equipment was implemented. Reliability and speed of measuring system were increased. New methods of lifetime calculation were added. Software features were expanded.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2007.4293005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Modernization of software for non- equilibrium charge carrier lifetime in silicon ingots measuring equipment was implemented. Reliability and speed of measuring system were increased. New methods of lifetime calculation were added. Software features were expanded.