扫描探针光刻技术制备GaAs/InGaAs微纳管

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292904

A. Prinz, J.A. Melkonyan, V. Seleznev

{"title":"扫描探针光刻技术制备GaAs/InGaAs微纳管","authors":"A. Prinz, J.A. Melkonyan, V. Seleznev","doi":"10.1109/SIBEDM.2007.4292904","DOIUrl":null,"url":null,"abstract":"The aim of this work was to fabricate, by means of scanning probe lithography, semiconductor micro- and nanotubes from strained GaAs/InGaAs- based film heterostructures. Using scanning probe lithography, micro- and nanotubes were obtained. It was shown possible to oxidize structures thicker than 100 nm through their entire thickness using local anodic oxidation. An advantage of local anodic oxidation is that this technique requires no resist to be used, leaving microstructures formed at previous process stages intact and therefore allowing repeated lithographic steps to be performed on one structure.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of GaAs/InGaAs Micro- and Nano- Tubes by Means of Scanning Probe Lithography\",\"authors\":\"A. Prinz, J.A. Melkonyan, V. Seleznev\",\"doi\":\"10.1109/SIBEDM.2007.4292904\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this work was to fabricate, by means of scanning probe lithography, semiconductor micro- and nanotubes from strained GaAs/InGaAs- based film heterostructures. Using scanning probe lithography, micro- and nanotubes were obtained. It was shown possible to oxidize structures thicker than 100 nm through their entire thickness using local anodic oxidation. An advantage of local anodic oxidation is that this technique requires no resist to be used, leaving microstructures formed at previous process stages intact and therefore allowing repeated lithographic steps to be performed on one structure.\",\"PeriodicalId\":106151,\"journal\":{\"name\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBEDM.2007.4292904\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2007.4292904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本研究的目的是利用扫描探针光刻技术，从应变GaAs/InGaAs薄膜异质结构中制备半导体微管和纳米管。利用扫描探针光刻技术，得到了微管和纳米管。结果表明，局部阳极氧化可以氧化厚度大于100 nm的结构。局部阳极氧化的一个优点是，该技术不需要使用抗蚀剂，使在前一个工艺阶段形成的微结构保持完整，因此允许在一个结构上重复光刻步骤。

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Fabrication of GaAs/InGaAs Micro- and Nano- Tubes by Means of Scanning Probe Lithography

The aim of this work was to fabricate, by means of scanning probe lithography, semiconductor micro- and nanotubes from strained GaAs/InGaAs- based film heterostructures. Using scanning probe lithography, micro- and nanotubes were obtained. It was shown possible to oxidize structures thicker than 100 nm through their entire thickness using local anodic oxidation. An advantage of local anodic oxidation is that this technique requires no resist to be used, leaving microstructures formed at previous process stages intact and therefore allowing repeated lithographic steps to be performed on one structure.

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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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