{"title":"硅锭参数测量设备软件","authors":"V. Anishchik","doi":"10.1109/SIBEDM.2007.4293005","DOIUrl":null,"url":null,"abstract":"Modernization of software for non- equilibrium charge carrier lifetime in silicon ingots measuring equipment was implemented. Reliability and speed of measuring system were increased. New methods of lifetime calculation were added. Software features were expanded.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Software for Silicon Ingots Parameters Measuring Equipment\",\"authors\":\"V. Anishchik\",\"doi\":\"10.1109/SIBEDM.2007.4293005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Modernization of software for non- equilibrium charge carrier lifetime in silicon ingots measuring equipment was implemented. Reliability and speed of measuring system were increased. New methods of lifetime calculation were added. Software features were expanded.\",\"PeriodicalId\":106151,\"journal\":{\"name\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBEDM.2007.4293005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2007.4293005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Software for Silicon Ingots Parameters Measuring Equipment
Modernization of software for non- equilibrium charge carrier lifetime in silicon ingots measuring equipment was implemented. Reliability and speed of measuring system were increased. New methods of lifetime calculation were added. Software features were expanded.