Surface Recombination and Charge Carriers Generation by Radiations in MBE p-HgCdTe Films with Graded-Gap Near-Border Layers

Abstract

The behavior of excess electron-holes gas in crossed electric and magnetic fields in multilayers structures p-HgCdTe with graded-gap near-border layers is described. In near-border layers a cadmium mole fraction xCd is increased from central party of structures to its borders. It was obtained, that the multilayers structure can be reduced to homogeneous film by using of effective surface recombination velocities and surface generation rate.