带梯度隙近边界层的MBE p-HgCdTe薄膜的表面复合和辐射产生载流子

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292906

D. Protasov, V. Kostuchenko

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引用次数: 0

摘要

描述了带梯度隙近边界层的p-HgCdTe多层结构中多余电子空穴气体在交叉电场和磁场中的行为。在近边界层中，镉的摩尔分数xCd从结构的中心向其边界增加。结果表明，利用有效表面复合速度和表面生成速率可以将多层膜结构还原为均匀膜。

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Surface Recombination and Charge Carriers Generation by Radiations in MBE p-HgCdTe Films with Graded-Gap Near-Border Layers

The behavior of excess electron-holes gas in crossed electric and magnetic fields in multilayers structures p-HgCdTe with graded-gap near-border layers is described. In near-border layers a cadmium mole fraction xCd is increased from central party of structures to its borders. It was obtained, that the multilayers structure can be reduced to homogeneous film by using of effective surface recombination velocities and surface generation rate.

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来源期刊

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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