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Chemical Vapor Deposition最新文献

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Chem. Vap. Deposition (7–8–9/2015) 化学。Vap。沉积（2015年7月8日至9月）
Chemical Vapor Deposition Pub Date : 2015-09-23 DOI: 10.1002/cvde.201577893
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引用次数: 0
A Quantum Chemical Descriptor for CVD Precursor Design: Predicting Decomposition Rates of TBP and TBAs Isomers and Derivatives† CVD前驱体设计的量子化学描述符:预测TBP和TBAs异构体和衍生物的分解速率
Chemical Vapor Deposition Pub Date : 2015-09-23 DOI: 10.1002/cvde.201504332
Andreas Stegmüller, Ralf Tonner
{"title":"A Quantum Chemical Descriptor for CVD Precursor Design: Predicting Decomposition Rates of TBP and TBAs Isomers and Derivatives†","authors":"Andreas Stegmüller,&nbsp;Ralf Tonner","doi":"10.1002/cvde.201504332","DOIUrl":"10.1002/cvde.201504332","url":null,"abstract":"<p>Easily accessible information from quantum chemical computations can be used to predict decomposition barriers for phosphorous and arsenic precursor molecules for CVD. Based on the mechanistic description of the <i>β</i>-hydrogen elimination reaction, a precursor with a very low decomposition barrier is suggested.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201504332","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51323024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Atomic Layer Deposition and Characterization of Dysprosium-Doped Zirconium Oxide Thin Films† 掺杂镝氧化锆薄膜的原子层沉积与表征
Chemical Vapor Deposition Pub Date : 2015-09-23 DOI: 10.1002/cvde.201507170
Aile Tamm, Jekaterina Kozlova, Tõnis Arroval, Lauri Aarik, Peeter Ritslaid, Hector García, Helena Castán, Salvador Dueñas, Kaupo Kukli, Jaan Aarik
{"title":"Atomic Layer Deposition and Characterization of Dysprosium-Doped Zirconium Oxide Thin Films†","authors":"Aile Tamm,&nbsp;Jekaterina Kozlova,&nbsp;Tõnis Arroval,&nbsp;Lauri Aarik,&nbsp;Peeter Ritslaid,&nbsp;Hector García,&nbsp;Helena Castán,&nbsp;Salvador Dueñas,&nbsp;Kaupo Kukli,&nbsp;Jaan Aarik","doi":"10.1002/cvde.201507170","DOIUrl":"10.1002/cvde.201507170","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>Dy<sub>2</sub>O<sub>3</sub> doped ZrO<sub>2</sub> films are grown on silicon substrates using atomic layer deposition at 300 °C. Dy(thd)<sub>3</sub> (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and ZrCl<sub>4</sub> are used as metal precursors and H<sub>2</sub>O as the oxygen precursor. Despite the low growth rate of Dy<sub>2</sub>O<sub>3</sub> in a beta-diketonate/water process, the process allows deposition of thin films with the dysprosium content of few mass %. The films crystallize in the form of tetragonal zirconia already in as-deposited state and grow conformally onto 3D substrates with an aspect ratio of 1:20. The capacitors formed on the basis of the films in as-deposited and annealed states demonstrate current–voltage and capacitance behavior characteristic of those with high-permittivity dielectrics. The maximum concentration of electronic defects at oxide/electrode interfaces reaches 1.8 × 10<sup>11</sup> cm<sup>−2</sup> eV<sup>−1</sup>.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507170","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51322863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A Hybrid-Type CVD System for Graphene Growth† 石墨烯生长的混合型CVD系统
Chemical Vapor Deposition Pub Date : 2015-09-23 DOI: 10.1002/cvde.201507163
Grigory Skoblin, Niclas Lindvall, Jie Sun, August Yurgens
{"title":"A Hybrid-Type CVD System for Graphene Growth†","authors":"Grigory Skoblin,&nbsp;Niclas Lindvall,&nbsp;Jie Sun,&nbsp;August Yurgens","doi":"10.1002/cvde.201507163","DOIUrl":"10.1002/cvde.201507163","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>A cold-wall CVD system for graphene growth on metal foils is converted to an effectively hot-wall one by merely adding another heater, sandwiching the foil in between the heaters. This simple design demonstrates both an improved temperature uniformity characteristic for hot-wall systems, and a high responsivity distinctive for cold-wall ones. This beneficial combination allows for a much better control of graphene growth kinetics.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507163","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51322781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Chem. Vap. Deposition (4–5–6/2015) 化学。Vap。沉积（2015年4月5日至6月）
Chemical Vapor Deposition Pub Date : 2015-06-03 DOI: 10.1002/cvde.201574563
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引用次数: 0
Cover image from S. Şentürk Lüle and co-workers (Chem. Vap. Deposition 2015, 21, 122) 封面图片来自S.Şentürk Lüle及其同事（Chem.Vap.Deposition 2015，21222）
Chemical Vapor Deposition Pub Date : 2015-06-03 DOI: 10.1002/cvde.201574561
{"title":"Cover image from S. Şentürk Lüle and co-workers (Chem. Vap. Deposition 2015, 21, 122)","authors":"","doi":"10.1002/cvde.201574561","DOIUrl":"https://doi.org/10.1002/cvde.201574561","url":null,"abstract":"<p>The ability of the two fluid method (TFM) to predict the gas-solid flow phenomenon in conical spouted beds operated with high density particles simulating the nuclear fuel coating conditions is investigated.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201574561","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72136462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chem. Vap. Deposition (4–5–6/2015) 化学。Vap。沉积（2015年4月5日至6月）
Chemical Vapor Deposition Pub Date : 2015-06-03 DOI: 10.1002/cvde.201574562
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引用次数: 0
Silicon Oxycarbide Thin Films by Remote Microwave Hydrogen Plasma CVD Using a Tetramethyldisiloxane Precursor† 采用四甲基二硅氧烷前驱体制备的远程微波氢等离子体CVD氧化硅薄膜
Chemical Vapor Deposition Pub Date : 2015-05-07 DOI: 10.1002/cvde.201504330
Aleksander M. Wrobel, Pawel Uznanski, Agnieszka Walkiewicz-Pietrzykowska, Bartosz Glebocki, Ewa Bryszewska
{"title":"Silicon Oxycarbide Thin Films by Remote Microwave Hydrogen Plasma CVD Using a Tetramethyldisiloxane Precursor†","authors":"Aleksander M. Wrobel,&nbsp;Pawel Uznanski,&nbsp;Agnieszka Walkiewicz-Pietrzykowska,&nbsp;Bartosz Glebocki,&nbsp;Ewa Bryszewska","doi":"10.1002/cvde.201504330","DOIUrl":"10.1002/cvde.201504330","url":null,"abstract":"<p>The effect of substrate temperature (T<sub>S</sub>) on the growth rate, chemical structure, surface morphology, density, refractive index, and optical absorption of a-SiCO:H films is reported. The increase in T<sub>S</sub> from 30 °C to 350 °C involves the transformation of the film from polymeric, low-density material to strongly cross-linked, dense Si-oxycarbide ceramics.</p>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201504330","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51322356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Magnesium Oxide Thin Films with Tunable Crystallographic Preferred Orientation via Aerosol-Assisted CVD† 通过气溶胶辅助CVD制备具有可调谐晶体取向的氧化镁薄膜
Chemical Vapor Deposition Pub Date : 2015-05-04 DOI: 10.1002/cvde.201507156
Sapna D. Ponja, Ivan P. Parkin, Claire J. Carmalt
{"title":"Magnesium Oxide Thin Films with Tunable Crystallographic Preferred Orientation via Aerosol-Assisted CVD†","authors":"Sapna D. Ponja,&nbsp;Ivan P. Parkin,&nbsp;Claire J. Carmalt","doi":"10.1002/cvde.201507156","DOIUrl":"10.1002/cvde.201507156","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>Magnesium oxide films are deposited on glass via aerosol-assisted (AA)CVD. Depositions using magnesium acetate tetrahydrate in ethanol or methanol are carried out at 400, 500, and 600 °C. Films are analyzed by various methods. Growth rate, film thickness, and crystallite size increase with temperature, regardless of solvent. The films are crystalline and the crystallographic preferred orientation varies with solvent and temperature, allowing fine-tuning for industrial applications. Solvent and temperature influence the surface morphology; films deposited using ethanol consist of small surface structures compared to the featureless morphology of methanol-derived films. The refractive index of the films is 1.72 for methanol and 1.70 for ethanol systems.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507156","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51322707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiy Films† Bi前体（CH3）3Bi和（C2H5）3Bi对GaAs1-yBiy薄膜的金属有机气相外延的影响†
Chemical Vapor Deposition Pub Date : 2015-04-27 DOI: 10.1002/cvde.201507160
Kamran Forghani, Yingxin Guan, Adam Wood, Susan Babock, Luke Mawst, Thomas F. Kuech
{"title":"The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiy Films†","authors":"Kamran Forghani,&nbsp;Yingxin Guan,&nbsp;Adam Wood,&nbsp;Susan Babock,&nbsp;Luke Mawst,&nbsp;Thomas F. Kuech","doi":"10.1002/cvde.201507160","DOIUrl":"10.1002/cvde.201507160","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>This study compares the effectiveness of two Bi sources, trimethyl bismuth (TMBi) and triethyl bismuth (TEBi), in the growth of GaAs<sub>1-<i>y</i></sub>Bi<i><sub>y</sub></i> thin films. Through optimization of the growth conditions, GaAs<sub>1-<i>y</i></sub>Bi<i><sub>y</sub></i>-GaAs heterostructures with high lateral homogeneity of Bi are grown. TEBi results in a lower carbon concentration than is typical of methyl-based compounds when used at low growth temperatures. These findings suggest the process of Bi incorporation proceeds more efficiently using the TEBi precursor. These studies do not show noticeable growth rate reduction under the dilute flows of TMBi and TEBi, however at high Bi source flux, a growth rate drop was observed for both sources.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507160","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51322757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
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