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Chemical Vapor Deposition最新文献

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Ozone-Based Atomic Layer Deposition of Gd2O3 from Tris(isopropyl-cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry† 由三(异丙基-环戊二烯基)钆原子层沉积Gd2O3:生长特性和表面化学†
Chemical Vapor Deposition Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507196
Jeong Hwan Han, Annelies Delabie, Alexis Franquet, Thierry Conard, Sven Van Elshocht, Christoph Adelmann
{"title":"Ozone-Based Atomic Layer Deposition of Gd2O3 from Tris(isopropyl-cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry†","authors":"Jeong Hwan Han,&nbsp;Annelies Delabie,&nbsp;Alexis Franquet,&nbsp;Thierry Conard,&nbsp;Sven Van Elshocht,&nbsp;Christoph Adelmann","doi":"10.1002/cvde.201507196","DOIUrl":"10.1002/cvde.201507196","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>The atomic layer deposition (ALD) of Gd<sub>2</sub>O<sub>3</sub> from tris(isopropyl-cyclopentadienyl) gadolinium (Gd(<sup><i>i</i></sup>PrCp)<sub>3</sub>) and O<sub>3</sub> is studied as a function of the O<sub>2</sub>/N<sub>2</sub> ratio used to generate O<sub>3</sub>. ALD using O<sub>3</sub> with low N<sub>2</sub> content leads to the formation of a hydroxyl-terminated surface after combustion reactions during O<sub>3</sub> exposure followed by proton transfer and ligand release during the Gd(<sup><i>i</i></sup>PrCp)<sub>3</sub> half cycle. This condition leads to the presence of parasitic chemical vapor deposition (CVD) due to the hygroscopicity of Gd<sub>2</sub>O<sub>3</sub>. By contrast, long O<sub>3</sub> pulses with high N<sub>2</sub> content lead to the dehydroxylation of the surface and to the suppression of both the proton transfer during the Gd(<sup><i>i</i></sup>PrCp)<sub>3</sub> half cycle as well as the parasitic CVD reactions.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 10-11-12","pages":"352-359"},"PeriodicalIF":0.0,"publicationDate":"2015-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507196","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51323698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electrochemical Performance of Vanadium Oxide Coatings Grown using Atmospheric Pressure CVD 常压CVD法制备氧化钒涂层的电化学性能
Chemical Vapor Deposition Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507193
Dimitra Vernardou, Maria Apostolopoulou, Dimitris Louloudakis, Nikolaos Katsarakis, Emmanouil Koudoumas
{"title":"Electrochemical Performance of Vanadium Oxide Coatings Grown using Atmospheric Pressure CVD","authors":"Dimitra Vernardou,&nbsp;Maria Apostolopoulou,&nbsp;Dimitris Louloudakis,&nbsp;Nikolaos Katsarakis,&nbsp;Emmanouil Koudoumas","doi":"10.1002/cvde.201507193","DOIUrl":"10.1002/cvde.201507193","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>The growth of vanadium dioxide is carried out using chemical vapor deposition with N<sub>2</sub> flow rates of 1, 1.4 and 2.2 L min<sup>−1</sup> through the vanadium precursor bubbler. The presence of both monoclinic and metastable vanadium dioxide phases with the co-existence of nanocrystallites and outgrowths on the coating surface is observed for the 1 L min<sup>−1</sup>. Additionally, the electrochemical performance for this sample is enhanced and the specific discharge capacity was the highest presenting capacitance retention of 97% after 500 scans. Finally, it is found that the diffusion of Li<sup>+</sup> through the cathode/electrolyte interface is easier enhancing its capacitive performance.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 10-11-12","pages":"369-374"},"PeriodicalIF":0.0,"publicationDate":"2015-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507193","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51323637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Hybrid Synergic Methodology to Prepare ALD Honey-Comb Anatase Films 复合协同法制备ALD蜂窝锐钛矿膜
Chemical Vapor Deposition Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507183
Francesca Visentin, Naida El Habra, Monica Favaro, Simone Battiston, Rosalba Gerbasi, Laura Crociani, Alessandro Galenda
{"title":"Hybrid Synergic Methodology to Prepare ALD Honey-Comb Anatase Films","authors":"Francesca Visentin,&nbsp;Naida El Habra,&nbsp;Monica Favaro,&nbsp;Simone Battiston,&nbsp;Rosalba Gerbasi,&nbsp;Laura Crociani,&nbsp;Alessandro Galenda","doi":"10.1002/cvde.201507183","DOIUrl":"10.1002/cvde.201507183","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>Macroporous inorganic structures with high surface-to-volume ratio have been recognized as a centre of interest in many fields. Here, attention is focused on a hybrid synergic methodology to prepare honey-comb (HC) anatase TiO<sub>2</sub> films with increased specific surface area. The breath figures (BFs) method is exploited to produce HC polystyrene (PS) templates and atomic layer deposition (ALD) is used to conformally cover them with a TiO<sub>2</sub> coating. Different approaches are tested to preserve the HC-TiO<sub>2</sub> structure during the conversion of the hybrid organic/inorganic materials into crystalline anatase films. Best results are obtained operating with ALD at 180 °C on pre-UV cross-linked substrates.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 10-11-12","pages":"300-306"},"PeriodicalIF":0.0,"publicationDate":"2015-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507183","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51323253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Process-Structure Investigation of Aluminum Oxide and Oxycarbide Thin Films prepared by Direct Liquid Injection CVD of Dimethylaluminum Isopropoxide (DMAI)† 直接液相注射CVD法制备二甲基异丙醇铝(DMAI)†氧化铝和碳化氧薄膜的工艺结构研究
Chemical Vapor Deposition Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507190
Loïc Baggetto, Cédric Charvillat, Jérôme Esvan, Yannick Thébault, Diane Samélor, Hugues Vergnes, Brigitte Caussat, Alain Gleizes, Constantin Vahlas
{"title":"A Process-Structure Investigation of Aluminum Oxide and Oxycarbide Thin Films prepared by Direct Liquid Injection CVD of Dimethylaluminum Isopropoxide (DMAI)†","authors":"Loïc Baggetto,&nbsp;Cédric Charvillat,&nbsp;Jérôme Esvan,&nbsp;Yannick Thébault,&nbsp;Diane Samélor,&nbsp;Hugues Vergnes,&nbsp;Brigitte Caussat,&nbsp;Alain Gleizes,&nbsp;Constantin Vahlas","doi":"10.1002/cvde.201507190","DOIUrl":"10.1002/cvde.201507190","url":null,"abstract":"<div>\u0000 \u0000 \u0000 <section>\u0000 \u0000 <p>We present the direct liquid injection CVD of aluminum oxide and oxycarbide thin films using dimethylaluminum isopropoxide at high process temperature (500–700 °C) with the addition of O<sub>2</sub> gas, and at low temperature (150–300 °C) with the addition of H<sub>2</sub>O vapor. Very smooth films with typical roughness values lower than 2 nm are obtained. The thin films are composed of an amorphous material. The composition evolves as a function of temperature from that of a partial hydroxide to a stoichiometric oxide at low deposition temperature (150–300 °C), and from that of a stoichiometric oxide to a mixture of an oxide with an (oxy) carbide at higher temperature (500–700 °C).</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 10-11-12","pages":"343-351"},"PeriodicalIF":0.0,"publicationDate":"2015-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507190","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51324026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Facile Route to Thin Films of Zinc Carbodiimide Using Aerosol-assisted CVD 气溶胶辅助CVD制备碳二亚胺锌薄膜的捷径
Chemical Vapor Deposition Pub Date : 2015-11-10 DOI: 10.1002/cvde.201507179
Karl M. Kaye, William Grantham, Geoffrey Hyett
{"title":"A Facile Route to Thin Films of Zinc Carbodiimide Using Aerosol-assisted CVD","authors":"Karl M. Kaye,&nbsp;William Grantham,&nbsp;Geoffrey Hyett","doi":"10.1002/cvde.201507179","DOIUrl":"10.1002/cvde.201507179","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>There has been a resurgence of interest in metal carbodiimides in recent years and in this paper we present a route to the synthesis of one of these phases, zinc carbodiimide, previously known as zinc cyanamide, in the form of a sub-micrometer thin film, using aerosol-assisted (AA)CVD from a solution of zinc acetate and urea in methanol, with the carbodiimide ion being formed from the decomposition of the urea molecule. Thin film synthesis is achieved over a deposition temperature range 375 − 500 °C, with a minimum ratio of urea to zinc acetate of 2:1 and a maximum of 5:1 established as viable for film formation. This work presents the first example of the synthesis of a ZnNCN thin film, or indeed any metal carbodiimide thin film, using a CVD technique.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 10-11-12","pages":"281-287"},"PeriodicalIF":0.0,"publicationDate":"2015-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507179","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51323211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Photo-oxidation of Polymers Synthesized by Plasma and Initiated CVD† 等离子体与引发CVD合成聚合物的光氧化研究
Chemical Vapor Deposition Pub Date : 2015-11-09 DOI: 10.1002/cvde.201507173
Salmaan H. Baxamusa, Aravind Suresh, Paul Ehrmann, Ted Laurence, Jiries Hanania, Jeff Hayes, Stephen Harley, Daniel D. Burkey
{"title":"Photo-oxidation of Polymers Synthesized by Plasma and Initiated CVD†","authors":"Salmaan H. Baxamusa,&nbsp;Aravind Suresh,&nbsp;Paul Ehrmann,&nbsp;Ted Laurence,&nbsp;Jiries Hanania,&nbsp;Jeff Hayes,&nbsp;Stephen Harley,&nbsp;Daniel D. Burkey","doi":"10.1002/cvde.201507173","DOIUrl":"10.1002/cvde.201507173","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>Plasma polymers are often limited by their susceptibility to spontaneous and photo-oxidation. We show that the unusual photoluminescence (PL) behavior of a plasma polymer of <i>trans</i>-2-butene is correlated with its PL strength. These photo-processes occur under blue light illumination (λ = 405 nm), distinguishing them from traditional ultraviolet degradation of polymers. These photo-active defects are likely formed during the plasma deposition process, and we show that a polymer synthesized using initiated (i)CVD, a non-plasma method, has 1000× lower PL signal and enhanced photo-stability. Non-plasma methods, such as iCVD, may therefore be a route to overcoming material aging issues that limit the adoption of plasma polymers.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 10-11-12","pages":"267-274"},"PeriodicalIF":0.0,"publicationDate":"2015-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507173","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51323479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Cover image from Jones and co-workers (Chem Vap. Deposition 2010, 16, 257) Jones及其同事的封面图片（Chem Vap.Deposition 2010，16257）
Chemical Vapor Deposition Pub Date : 2015-09-23 DOI: 10.1002/cvde.201577891
{"title":"Cover image from Jones and co-workers (Chem Vap. Deposition 2010, 16, 257)","authors":"","doi":"10.1002/cvde.201577891","DOIUrl":"https://doi.org/10.1002/cvde.201577891","url":null,"abstract":"<p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 7-8-9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201577891","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71977203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma Enhanced Chemical Vapor Deposition of Poly(2,2,3,4,4,4-hexafluorobutyl acrylate) Thin Films† 等离子体增强化学气相沉积聚(2,2,3,4,4,4-六氟丙烯酸丁酯)薄膜†
Chemical Vapor Deposition Pub Date : 2015-09-23 DOI: 10.1002/cvde.201507168
Mustafa Karaman, Ezgi Yenice
{"title":"Plasma Enhanced Chemical Vapor Deposition of Poly(2,2,3,4,4,4-hexafluorobutyl acrylate) Thin Films†","authors":"Mustafa Karaman,&nbsp;Ezgi Yenice","doi":"10.1002/cvde.201507168","DOIUrl":"10.1002/cvde.201507168","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>The synthesis of poly(2,2,3,4,4,4-hexafluorobutyl acrylate) (PHFBA) thin films using plasma enhanced chemical vapor deposition (PECVD) method is reported. PHFBA is a non-toxic and low surface energy polymer containing a –CF<sub>3</sub> end group, which makes PHFBA a suitable hydrophobic finish. The effects of plasma power and substrate temperature on chemical and morphological structure of as-deposited films are studied. A greater retention of the perfluoroalkyl functionality is found for the depositions carried out at low powers and high temperatures. PHFBA thin films show superhydrophobic properties when deposited on rough fiber mat surfaces with observed water contact angles greater than 150 degrees.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 7-8-9","pages":"188-195"},"PeriodicalIF":0.0,"publicationDate":"2015-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507168","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51322824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition† 流化床化学气相沉积制备高柔性碳化硅纳米线
Chemical Vapor Deposition Pub Date : 2015-09-23 DOI: 10.1002/cvde.201507171
Rongzheng Liu, Malin Liu, Jiaxing Chang, Youlin Shao, Bing Liu
{"title":"Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition†","authors":"Rongzheng Liu,&nbsp;Malin Liu,&nbsp;Jiaxing Chang,&nbsp;Youlin Shao,&nbsp;Bing Liu","doi":"10.1002/cvde.201507171","DOIUrl":"10.1002/cvde.201507171","url":null,"abstract":"<div>\u0000 \u0000 <section>\u0000 \u0000 <p>High flexible SiC nanowires with diameters in the range of 10 to 50 nm and lengths of several hundred micrometers to several millimeters are synthesized using a novel catalyst-assisted fluidized bed chemical vapor deposition method. Methyltrichlorosilane (MTS) is used as source material and particles containing cobalt were used as catalyst. The fluidized bed is specially designed to form a perpendicular uneven temperature distribution. Suspended nanosized liquid catalyst droplets are produced at middle high temperature zone and SiC nanowires are formed in situ on the catalyst droplets then accumulated at the upper part of fluidized bed. The nanowires exhibit a single crystal feature with some stacking faults. Transmission electron microscopy (TEM) analysis verifies a growth direction along the &lt;111&gt; axis of the nanowires. A blue shift optical emission band at about 420 nm is detected using photoluminescence spectroscopy. From the high-resolution TEM investigation, a nanoscale smooth plane between the nanowire and the catalyst tip is observed and the two phases exhibit highly epitaxial growth interface. The growth process of the nanowires is discussed and a possible formation mechanism is proposed.</p>\u0000 </section>\u0000 </div>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 7-8-9","pages":"196-203"},"PeriodicalIF":0.0,"publicationDate":"2015-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201507171","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"51322927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Chem. Vap. Deposition (7–8–9/2015) 化学。Vap。沉积（2015年7月8日至9月）
Chemical Vapor Deposition Pub Date : 2015-09-23 DOI: 10.1002/cvde.201577892
{"title":"Chem. Vap. Deposition (7–8–9/2015)","authors":"","doi":"10.1002/cvde.201577892","DOIUrl":"https://doi.org/10.1002/cvde.201577892","url":null,"abstract":"","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":"21 7-8-9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2015-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201577892","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71977204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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