常压CVD法制备氧化钒涂层的电化学性能

Chemical Vapor Deposition Pub Date : 2015-11-10 DOI:10.1002/cvde.201507193

Dimitra Vernardou, Maria Apostolopoulou, Dimitris Louloudakis, Nikolaos Katsarakis, Emmanouil Koudoumas

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引用次数: 16

摘要

采用化学气相沉积法，N2流量分别为1、1.4和2.2 L min−1，通过钒前驱体起泡器生长二氧化钒。在1 L min−1温度下，涂层表面存在单斜相和亚稳态二氧化钒相，同时存在纳米晶和外生物。此外，该样品的电化学性能得到增强，在500次扫描后，该样品的比放电容量最高，电容保留率为97%。最后，发现Li+通过阴极/电解质界面的扩散更容易提高其电容性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Electrochemical Performance of Vanadium Oxide Coatings Grown using Atmospheric Pressure CVD

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Electrochemical Performance of Vanadium Oxide Coatings Grown using Atmospheric Pressure CVD

The growth of vanadium dioxide is carried out using chemical vapor deposition with N₂ flow rates of 1, 1.4 and 2.2 L min⁻¹ through the vanadium precursor bubbler. The presence of both monoclinic and metastable vanadium dioxide phases with the co-existence of nanocrystallites and outgrowths on the coating surface is observed for the 1 L min⁻¹. Additionally, the electrochemical performance for this sample is enhanced and the specific discharge capacity was the highest presenting capacitance retention of 97% after 500 scans. Finally, it is found that the diffusion of Li⁺ through the cathode/electrolyte interface is easier enhancing its capacitive performance.

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.