石墨烯生长的混合型CVD系统

Chemical Vapor Deposition Pub Date : 2015-09-23 DOI:10.1002/cvde.201507163

Grigory Skoblin, Niclas Lindvall, Jie Sun, August Yurgens

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引用次数: 2

摘要

在金属箔上生长石墨烯的冷壁CVD系统仅仅通过在加热器之间添加另一个加热器，将箔片夹在中间，就可以有效地转换为热壁CVD系统。这种简单的设计既提高了热壁系统的温度均匀性，又提高了冷壁系统的高响应性。这种有益的组合允许更好地控制石墨烯生长动力学。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Hybrid-Type CVD System for Graphene Growth†

A cold-wall CVD system for graphene growth on metal foils is converted to an effectively hot-wall one by merely adding another heater, sandwiching the foil in between the heaters. This simple design demonstrates both an improved temperature uniformity characteristic for hot-wall systems, and a high responsivity distinctive for cold-wall ones. This beneficial combination allows for a much better control of graphene growth kinetics.

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.