A Quantum Chemical Descriptor for CVD Precursor Design: Predicting Decomposition Rates of TBP and TBAs Isomers and Derivatives†

Andreas Stegmüller, Ralf Tonner
{"title":"A Quantum Chemical Descriptor for CVD Precursor Design: Predicting Decomposition Rates of TBP and TBAs Isomers and Derivatives†","authors":"Andreas Stegmüller,&nbsp;Ralf Tonner","doi":"10.1002/cvde.201504332","DOIUrl":null,"url":null,"abstract":"<p>Easily accessible information from quantum chemical computations can be used to predict decomposition barriers for phosphorous and arsenic precursor molecules for CVD. Based on the mechanistic description of the <i>β</i>-hydrogen elimination reaction, a precursor with a very low decomposition barrier is suggested.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":10093,"journal":{"name":"Chemical Vapor Deposition","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/cvde.201504332","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Vapor Deposition","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cvde.201504332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

Easily accessible information from quantum chemical computations can be used to predict decomposition barriers for phosphorous and arsenic precursor molecules for CVD. Based on the mechanistic description of the β-hydrogen elimination reaction, a precursor with a very low decomposition barrier is suggested.

Abstract Image

CVD前驱体设计的量子化学描述符:预测TBP和TBAs异构体和衍生物的分解速率
从量子化学计算中容易获得的信息可以用来预测CVD中磷和砷前体分子的分解势垒。根据β-氢消除反应的机理描述,提出了一种分解势垒极低的前驱体。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Chemical Vapor Deposition
Chemical Vapor Deposition 工程技术-材料科学:膜
自引率
0.00%
发文量
0
审稿时长
>12 weeks
期刊介绍: Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信