Silicon Oxycarbide Thin Films by Remote Microwave Hydrogen Plasma CVD Using a Tetramethyldisiloxane Precursor†

Chemical Vapor Deposition Pub Date : 2015-05-07 DOI:10.1002/cvde.201504330

Aleksander M. Wrobel, Pawel Uznanski, Agnieszka Walkiewicz-Pietrzykowska, Bartosz Glebocki, Ewa Bryszewska

引用次数: 9

Abstract

The effect of substrate temperature (T_S) on the growth rate, chemical structure, surface morphology, density, refractive index, and optical absorption of a-SiCO:H films is reported. The increase in T_S from 30 °C to 350 °C involves the transformation of the film from polymeric, low-density material to strongly cross-linked, dense Si-oxycarbide ceramics.

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采用四甲基二硅氧烷前驱体制备的远程微波氢等离子体CVD氧化硅薄膜

报道了衬底温度(TS)对a-SiCO:H薄膜生长速率、化学结构、表面形貌、密度、折射率和光吸收的影响。TS从30°C增加到350°C，涉及到薄膜从聚合物、低密度材料转变为强交联、致密的硅氧碳化物陶瓷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chemical Vapor Deposition 工程技术-材料科学：膜

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Chemical Vapor Deposition (CVD) publishes Reviews, Short Communications, and Full Papers on all aspects of chemical vapor deposition and related technologies, along with other articles presenting opinion, news, conference information, and book reviews. All papers are peer-reviewed. The journal provides a unified forum for chemists, physicists, and engineers whose publications on chemical vapor deposition have in the past been spread over journals covering inorganic chemistry, materials chemistry, organometallics, applied physics and semiconductor technology, thin films, and ceramic processing.