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International Journal of Inorganic Materials最新文献

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Influence of the annealing conditions on the properties of ZnO thin films 退火条件对ZnO薄膜性能的影响
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00113-1
P Nunes, E Fortunato, R Martins
{"title":"Influence of the annealing conditions on the properties of ZnO thin films","authors":"P Nunes,&nbsp;E Fortunato,&nbsp;R Martins","doi":"10.1016/S1466-6049(01)00113-1","DOIUrl":"10.1016/S1466-6049(01)00113-1","url":null,"abstract":"<div><p><span><span>The effect of annealing treatment (in the presence of different types of atmospheres) on the performances of zinc oxide thin films (intrinsic and doped with In and Al) prepared by </span>spray pyrolysis have been studied, with the aim to determine more adequate conditions to improve the properties of the films. The results show that the annealing treatment leads to substantial changes in the structural, electrical and optical characteristics of ZnO thin films. The most significant improvements were obtained after annealing in forming gas (reduction atmosphere) at 200°C during 2 h. The ZnO:In film after heat treatment was the one that exhibited the lowest resistivity (</span><em>ρ</em>=5.2×10<sup>−2</sup> Ωcm) and a high transmittance (<em>T</em>=86%).</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1125-1128"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00113-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89208643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 64
Phase diagram studies in the systems La2O3–SrO–Ga2O3 and La2O3–MgO–Ga2O3 at 1400°C in air La2O3-SrO-Ga2O3和La2O3-MgO-Ga2O3体系在1400℃空气中的相图研究
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00158-1
Peter Majewski, Michael Rozumek, Heike Schluckwerder, Fritz Aldinger
{"title":"Phase diagram studies in the systems La2O3–SrO–Ga2O3 and La2O3–MgO–Ga2O3 at 1400°C in air","authors":"Peter Majewski,&nbsp;Michael Rozumek,&nbsp;Heike Schluckwerder,&nbsp;Fritz Aldinger","doi":"10.1016/S1466-6049(01)00158-1","DOIUrl":"10.1016/S1466-6049(01)00158-1","url":null,"abstract":"<div><p>The ternary systems La<sub>2</sub>O<sub>3</sub>–SrO–Ga<sub>2</sub>O<sub>3</sub> and La<sub>2</sub>O<sub>3</sub>–MgO–Ga<sub>2</sub>O<sub>3</sub> were studied at 1400°C in air with emphasis on LaGaO<sub>3</sub>. The compound exhibits a small solid solubility of Sr substituting for La, and Mg substituting for Ga, respectively. In the system La<sub>2</sub>O<sub>3</sub>–SrO–Ga<sub>2</sub>O<sub>3</sub> the compound is stable within a very narrow concentration region. In the system La<sub>2</sub>O<sub>3</sub>–MgO–Ga<sub>2</sub>O<sub>3</sub> it is in equilibrium with most of the phases of the system present at 1400°C.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1343-1344"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00158-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81455607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Effect of different dopants on the properties of ZnO thin films 不同掺杂剂对ZnO薄膜性能的影响
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00129-5
P Nunes , E Fortunato , P Vilarinho , R Martins
{"title":"Effect of different dopants on the properties of ZnO thin films","authors":"P Nunes ,&nbsp;E Fortunato ,&nbsp;P Vilarinho ,&nbsp;R Martins","doi":"10.1016/S1466-6049(01)00129-5","DOIUrl":"10.1016/S1466-6049(01)00129-5","url":null,"abstract":"<div><p><span><span><span>The influence of doping on the properties of zinc oxide thin films deposited by </span>spray pyrolysis has been studied. The results show that the doping affects the properties of the films, mainly the electrical ones, function of its concentration and nature. The most significative improvement were observed for films doped with 1 at.% of </span>indium exhibiting a resistivity of 1.9×10</span><sup>−1</sup> Ω<!--> <!-->m associated to a transmittance of 86%, characteristics required for applications on the optoelectronic devices.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1211-1213"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00129-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74442555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Epitaxial phase stabilization in thin films of complex oxides 复合氧化物薄膜的外延相稳定
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00119-2
A.R Kaul , O.Yu Gorbenko , I.E Graboy , S.V Samoilenkov , M.A Novojilov , A.A Bosak , H.W Zandbergen , G Wahl
{"title":"Epitaxial phase stabilization in thin films of complex oxides","authors":"A.R Kaul ,&nbsp;O.Yu Gorbenko ,&nbsp;I.E Graboy ,&nbsp;S.V Samoilenkov ,&nbsp;M.A Novojilov ,&nbsp;A.A Bosak ,&nbsp;H.W Zandbergen ,&nbsp;G Wahl","doi":"10.1016/S1466-6049(01)00119-2","DOIUrl":"10.1016/S1466-6049(01)00119-2","url":null,"abstract":"<div><p><span>A survey of experimental results is given presenting the successful growth of oxide epitaxial thin films in thermodynamic conditions (</span><em>T</em>, pressure, <em>p</em>(O<sub>2</sub>), composition), which are far from those necessary for the stable existence of these phases in polycrystalline state. The unstable-in-bulk BaCu<sub>3</sub>O<sub>4</sub>, NdMn<sub>7</sub>O<sub>12</sub><span>, rare earth nickelates RNiO</span><sub>3</sub><span> and unusual phase relations in R–Ba–Cu–O systems are the examples. The stabilizing effect was observed in thin films only if the epitaxial growth was induced. The effect is thought to be of thermodynamic origin, rather than of kinetic one, and it is supposed to be the result of the low surface energy of coherent interfaces formed at the epitaxy.</span></p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1177-1180"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00119-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74840349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Ordered mesoporous materials: composition and topology control through chemistry 有序介孔材料:化学组成与拓扑控制
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00114-3
J. El Haskouri , S. Cabrera , M. Caldés , J. Alamo , A. Beltrán-Porter , M.D. Marcos , P. Amorós , D. Beltrán-Porter
{"title":"Ordered mesoporous materials: composition and topology control through chemistry","authors":"J. El Haskouri ,&nbsp;S. Cabrera ,&nbsp;M. Caldés ,&nbsp;J. Alamo ,&nbsp;A. Beltrán-Porter ,&nbsp;M.D. Marcos ,&nbsp;P. Amorós ,&nbsp;D. Beltrán-Porter","doi":"10.1016/S1466-6049(01)00114-3","DOIUrl":"10.1016/S1466-6049(01)00114-3","url":null,"abstract":"<div><p>The atrane route constitutes a very versatile technique to obtain ordered mesoporous materials. A wide diversity of silica and silica-doped materials can be prepared by bringing into play fundamental synthesis parameters (like temperature, concentration and pH) which, in turn, allow modulation of the resulting material topology.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1157-1163"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00114-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74561521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Elimination of silicon hillocks using an alkaline complexant etching system 用碱性络合剂蚀刻系统消除硅丘
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00117-9
Carmen Moldovan, Rodica Iosub, Mircea Modreanu
{"title":"Elimination of silicon hillocks using an alkaline complexant etching system","authors":"Carmen Moldovan,&nbsp;Rodica Iosub,&nbsp;Mircea Modreanu","doi":"10.1016/S1466-6049(01)00117-9","DOIUrl":"10.1016/S1466-6049(01)00117-9","url":null,"abstract":"<div><p>This paper presents the results obtained in silicon hillock elimination using alkaline solutions: KOH, NaOH, LiOH·H<sub>2</sub>O with an added complexant. The added complexant in alkaline solutions is azocalix[4]arene. The alkaline solutions were compared and analysed with and without added complexant for their effect on hillocks. The behaviour of these solutions is explained using the theory of molar conductivity. The results show that use of the complexant permits control of the etching process, yielding a smooth silicon surface, almost free of hillocks. A comparison between the alkaline etchants (KOH, NaOH, LiOH·H<sub>2</sub>O) is made and the influence of the cations in silicon etching process is explained.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1173-1176"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00117-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82775503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Liquid phase sintering of NiCuZn ferrite and its magnetic properties NiCuZn铁氧体的液相烧结及其磁性能
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00123-4
Yuh-Ruey Wang, Sea-Fue Wang
{"title":"Liquid phase sintering of NiCuZn ferrite and its magnetic properties","authors":"Yuh-Ruey Wang,&nbsp;Sea-Fue Wang","doi":"10.1016/S1466-6049(01)00123-4","DOIUrl":"10.1016/S1466-6049(01)00123-4","url":null,"abstract":"<div><p><span>The influence of glass additives on the densification, microstructural evolution and magnetic properties of NiCuZn ferrites were investigated. Two glass systems including PbO·SiO</span><sub>2</sub> and PbO·B<sub>2</sub>O<sub>3</sub><span> were used to reduce the sintering temperature of a NiCuZn ferrite. The PbO·SiO</span><sub>2</sub><span> glass system was shown to be an effective additive to obstruct the grain boundary movement and prevent the abnormal grain growth. In addition, it significantly lowers the sintering temperature of the ferrite. Ferrites sintered with PbO·SiO</span><sub>2</sub> have higher resistivity, higher <em>Q</em> and higher <em>H</em><sub>c</sub> compared with those of PbO·B<sub>2</sub>O<sub>3</sub> systems. These results also indicated that the ratio of modifier to glass-former did not significantly change the densification behavior, microstructural evolution and magnetic properties of the NiCuZn ferrite.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1189-1192"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00123-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88164687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
The role of oxygen in formation of radiative recombination centers in ZnSe1−xTex crystals 氧在ZnSe1−xTex晶体辐射复合中心形成中的作用
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00138-6
V.D Ryzhikov , N.G Starzhinskiy , L.P Gal’chinetskii , V.I Silin , G Tamulaitis , E.K Lisetskaya
{"title":"The role of oxygen in formation of radiative recombination centers in ZnSe1−xTex crystals","authors":"V.D Ryzhikov ,&nbsp;N.G Starzhinskiy ,&nbsp;L.P Gal’chinetskii ,&nbsp;V.I Silin ,&nbsp;G Tamulaitis ,&nbsp;E.K Lisetskaya","doi":"10.1016/S1466-6049(01)00138-6","DOIUrl":"10.1016/S1466-6049(01)00138-6","url":null,"abstract":"<div><p>The present study was aimed at revealing the influence of oxygen on formation of alloy ZnSe–ZnTe as well as on development of luminescence centers under thermal treatment of scintillators based on isovalently doped ZnSe crystals. The presence of oxygen in ZnSe(Te) crystals as ZnO phase has been shown to hinder formation of (V′<sub>Zn</sub>Te<sup><em>x</em></sup><sub>Se</sub><span>)′ type luminescence centers responsible for luminescence band peaked at 635–640 nm, which is the principal emission band of this scintillator. In ZnSe(Te) crystals doped by mechanically stimulated ion implantation with active forms of oxygen (O′, O</span><sup><em>x</em></sup>, O′<sub>2</sub>, etc.), luminescence quenching effects are not observed. However, the luminescence band in these crystals is blueshifted towards 600–610 nm. Strong luminescence band peaked at <em>λ</em><sub>max</sub>=590–610 nm is observed in Te-free ZnSe crystals doped with oxygen in active forms. The experimental results are interpreted by formation of centers (Zn<sub>i</sub><sup>⋅</sup>O<sup><em>x</em></sup><sub>i</sub>)<sup>⋅</sup> or (Zn<sub>i</sub><sup>⋅</sup>O<sup><em>x</em></sup><sub>Se</sub>)<sup>⋅</sup>. Having larger charge carrier capture cross-section than (Zn<sup>⋅</sup><sub>i</sub>V′<sub>Zn</sub>Te<sup><em>x</em></sup><sub>Se</sub>)<sup><em>x</em></sup>, the oxygen-containing centers determine kinetics of luminescence in ZnSe<sub>1−<em>x</em></sub>Te<sub><em>x</em></sub> crystals (<em>x</em><span>&lt;0.001) treated by active forms of oxygen during mechanical activation of the initial raw material for crystal growth.</span></p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1227-1229"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00138-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74171611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
High temperature electrical conductivity in Ga and In solubility limit region in ZnS Ga的高温电导率和ZnS的in溶解度极限区
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00159-3
K. Lott , M. Raukas , O. Volobujeva , A. Vishnjakov , A. Grebennik
{"title":"High temperature electrical conductivity in Ga and In solubility limit region in ZnS","authors":"K. Lott ,&nbsp;M. Raukas ,&nbsp;O. Volobujeva ,&nbsp;A. Vishnjakov ,&nbsp;A. Grebennik","doi":"10.1016/S1466-6049(01)00159-3","DOIUrl":"10.1016/S1466-6049(01)00159-3","url":null,"abstract":"<div><p>High temperature electrical conductivity (HTEC) and solubility measurements of Ga and In were performed in ZnS. To investigate Ga and In solubility in ZnS under the controlled vapour pressure of Zn, a special construction of quartz ampoules were used. Ga and In solubility isotherms in ZnS are given. At high temperatures and at low concentrations, Ga and In act as a single donor. At high zinc pressures, outdiffusion of gallium<span> and indium occurs. The change of the solubility of Ga or In is reflected in ZnS HTEC isotherms. If doped at the same doping conditions, ZnS:Ga and ZnS:In had the same HTEC absolute values despite the differences in Ga and In solubilities.</span></p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1345-1347"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00159-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79113023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Stress-induced transformation of microdefects in neutron irradiated Czochralski silicon 中子辐照恰克拉尔斯基硅微缺陷的应力诱导转变
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00146-5
J Bak-Misiuk , C.A Londos , A Misiuk , L.G Fytros , H.B Surma , J Trela , K Papastergiou , J Domagala
{"title":"Stress-induced transformation of microdefects in neutron irradiated Czochralski silicon","authors":"J Bak-Misiuk ,&nbsp;C.A Londos ,&nbsp;A Misiuk ,&nbsp;L.G Fytros ,&nbsp;H.B Surma ,&nbsp;J Trela ,&nbsp;K Papastergiou ,&nbsp;J Domagala","doi":"10.1016/S1466-6049(01)00146-5","DOIUrl":"10.1016/S1466-6049(01)00146-5","url":null,"abstract":"<div><p>Microstructure of neutron irradiated Cz-Si has been examined after out-annealing of irradiation-induced defects and pressure treatment at 1170 K-1 GPa. X-ray diffuse scattering and defect dimensions are related to oxygen concentration and to stress-induced oxygen precipitation. The pressure treatment results in diminished diffuse scattering and defect dimensions.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1307-1309"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00146-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80788476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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