International Journal of Inorganic Materials最新文献

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Intercalation chemistry of superconducting zirconium and hafnium nitride halides 超导氮化锆和铪卤化物的插层化学
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00135-0
M.R Palacı́n , J Oró-Solé , M Vlassov , B Martı́nez , D Beltrán-Porter , M.T Caldés , A Fuertes
{"title":"Intercalation chemistry of superconducting zirconium and hafnium nitride halides","authors":"M.R Palacı́n ,&nbsp;J Oró-Solé ,&nbsp;M Vlassov ,&nbsp;B Martı́nez ,&nbsp;D Beltrán-Porter ,&nbsp;M.T Caldés ,&nbsp;A Fuertes","doi":"10.1016/S1466-6049(01)00135-0","DOIUrl":"10.1016/S1466-6049(01)00135-0","url":null,"abstract":"<div><p>Lithium intercalation in MNX (M=Zr, Hf; X=Cl, Br) may lead to superconducting compounds with critical temperatures up to 24 K. Electrochemical lithiation experiments agree with the results obtained with chemical methods, as samples with larger capacity on discharge are also those having larger lithium contents after chemical lithiation. Variations exist in the electrochemical profiles of different batches for these compounds indicating differences in the intercalation reaction pathway. High-resolution electron microscopy images confirm the structural model isotypic to SmSI for β-MNX phases. The major part of crystals from ZrNX as well as from the HfNCl samples showing a high lithium intercalation degree exhibit a regular stacking of the layers, being almost free of defects. In contrast, samples with low lithium uptakes show a high proportion of crystals with a HfO<sub>2</sub> layer at their thin edges. In agreement with these results, magnetic measurements for Li<sub><em>x</em></sub>HfNCl indicate, in contrast to Li<sub><em>x</em></sub>ZrNX compounds, small superconducting fractions and very broad transitions consistent with a distribution of critical temperatures and a heterogeneous nature of the samples.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1291-1293"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00135-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89579675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxy induced phase stabilization: a comparative experimental and elasticity-based theoretical study on MBE grown PbSe/CaF2/Si epilayer 外延诱导相稳定:MBE生长PbSe/CaF2/Si薄膜的实验与弹性理论对比研究
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00142-8
G Breton , T Maurice , P Masri , S Charar , M Averous
{"title":"Epitaxy induced phase stabilization: a comparative experimental and elasticity-based theoretical study on MBE grown PbSe/CaF2/Si epilayer","authors":"G Breton ,&nbsp;T Maurice ,&nbsp;P Masri ,&nbsp;S Charar ,&nbsp;M Averous","doi":"10.1016/S1466-6049(01)00142-8","DOIUrl":"10.1016/S1466-6049(01)00142-8","url":null,"abstract":"<div><p><span><span>Modern epitaxial growth<span> techniques show that material-phase stabilization can be achieved by epitaxial growth provided that suitable substrate (s) are used. Buffer layers (BL) play a vital role in epitaxial growth optimisation. By applying through the BL/s </span></span>heterostructure continuity conditions on relevant strain-related features, we perform a self-consistent growth-optimisation strategy involving BL compositions. The calculation of these strain-related phase-dependent features enables to achieve an approach of as-grown material phase determination based on epitaxy experiments and theoretical previsions. To illustrate this methodology, we have investigated the lead salt IV–VI PbSe/CaF</span><sub>2</sub><span>/Si(111) epilayer grown by MBE. For the optimised BL, a thin CaFSe layer has been grown under Se flux of CaF</span><sub>2</sub> layer before deposition of the PbSe layer. The efficiency of the continuity conditions in optimising MBE growth is shown by characterising all samples by high-resolution X-ray diffraction, atomic force microscopy for structural quality and Hall effect for electrical properties.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1237-1239"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00142-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91461696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Notes for Authors–International Journal of Inorganic Materials 作者说明-国际无机材料杂志
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00206-9
{"title":"Notes for Authors–International Journal of Inorganic Materials","authors":"","doi":"10.1016/S1466-6049(01)00206-9","DOIUrl":"https://doi.org/10.1016/S1466-6049(01)00206-9","url":null,"abstract":"","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages XXVII-XXIX"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00206-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138344986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Importance of soft solution processing for advanced BaZrO3 materials 软溶工艺对先进BaZrO3材料的重要性
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00122-2
B Robertz, F Boschini, R Cloots, A Rulmont
{"title":"Importance of soft solution processing for advanced BaZrO3 materials","authors":"B Robertz,&nbsp;F Boschini,&nbsp;R Cloots,&nbsp;A Rulmont","doi":"10.1016/S1466-6049(01)00122-2","DOIUrl":"10.1016/S1466-6049(01)00122-2","url":null,"abstract":"<div><p><span><span>Barium zirconate<span><span> is an interesting material for refractory applications as well as a good substrate for the manufacturing of high temperature superconductors. However, its solid state synthesis requires high temperature and provides inhomogeneous powder with a broad particle size distribution. In order to avoid these disadvantages, soft solution routes are of growing importance in the ceramic </span>powder synthesis. Precipitation, decomposition of precursors, combustion techniques offer alternative ways to the solid state method. Advantages of these are a lower </span></span>calcination temperature, production of homogeneous and fine monodisperse powders. The obtained powders have been characterised by XRD, IR, SEM and DTA/TG analysis. The influence of the synthesis conditions on the properties of BaZrO</span><sub>3</sub> has been studied.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1185-1187"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00122-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74061686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
High temperature electrical conductivity in the Ag solubility limit region in ZnS and in CdSe 在ZnS和CdSe中Ag溶解度极限区域的高温电导率
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00137-4
K Lott , T Nirk , M Raukas , O Volobujeva , A Öpik , A Vishnjakov
{"title":"High temperature electrical conductivity in the Ag solubility limit region in ZnS and in CdSe","authors":"K Lott ,&nbsp;T Nirk ,&nbsp;M Raukas ,&nbsp;O Volobujeva ,&nbsp;A Öpik ,&nbsp;A Vishnjakov","doi":"10.1016/S1466-6049(01)00137-4","DOIUrl":"10.1016/S1466-6049(01)00137-4","url":null,"abstract":"<div><p>To determine analytically Ag solubility in ZnS or in CdSe monocrystals, Ag was diffused into the monocrystal at a fixed temperature <em>T</em> and under the defined component pressure <em>p</em>. In the region of sulfide phases, in ZnS the Ag solubility is complicated. It depends on activities of Ag<sub>2</sub>S, Ag and incorporation mechanisms. In the equilibrium of ZnS with metallic alloys, an increase of <em>p</em><sub>Zn</sub> causes the total outdiffusion of Ag. The high temperature electrical conductivity of silver doped CdSe single crystal was measured over the range from 500°C to 900°C. In the range, where conductivity decreases with the increase of <em>p</em><sub>Cd</sub>, the results may be explained by the decrease of solubility of Ag in CdSe. These results were in agreement with the data obtained by the analytical method.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1295-1297"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00137-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90210922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Typical features of nitrogen in nitride-type compounds 氮类化合物中氮的典型特征
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00145-3
Roger Marchand, Franck Tessier, André Le Sauze, Nadège Diot
{"title":"Typical features of nitrogen in nitride-type compounds","authors":"Roger Marchand,&nbsp;Franck Tessier,&nbsp;André Le Sauze,&nbsp;Nadège Diot","doi":"10.1016/S1466-6049(01)00145-3","DOIUrl":"10.1016/S1466-6049(01)00145-3","url":null,"abstract":"<div><p><span>Nitride and oxynitride materials have attractive properties directly related to the role played by nitrogen. In particular, a comparison between oxynitrides and oxides highlights the characteristics of a nitrogen N</span><sup>3−</sup>/oxygen O<sup>2−</sup> substitution: an increase in the anionic formal charge, a greater covalent character, a higher cross-linking density in glasses, a reducing character due to the N<sup>3−</sup>/N<sup>0</sup> redox couple, and modified acid–base properties. Each specific character is illustrated by appropriate examples.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1143-1146"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00145-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78216623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 46
Phase equilibria in the system La2O3–SrO–Mn3O4 in air 空气中La2O3-SrO-Mn3O4体系的相平衡
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00156-8
Peter Majewski, Darja Benne, Lars Epple, Fritz Aldinger
{"title":"Phase equilibria in the system La2O3–SrO–Mn3O4 in air","authors":"Peter Majewski,&nbsp;Darja Benne,&nbsp;Lars Epple,&nbsp;Fritz Aldinger","doi":"10.1016/S1466-6049(01)00156-8","DOIUrl":"10.1016/S1466-6049(01)00156-8","url":null,"abstract":"<div><p>The phase equilibria of the system La<sub>2</sub>O<sub>3</sub>–SrO–Mn<sub>3</sub>O<sub>4</sub><span> in air has been studied. The Perovskite structured phases LaMnO</span><sub>3</sub> and SrMnO<sub>3</sub> do not form complete solid solutions below 1350°C. Ternary phases were not found.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1257-1259"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00156-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80162706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Oxygen-related micro-defects in Czochralski silicon annealed at enhanced stress conditions 在强化应力条件下退火的直克拉氏硅中的氧相关微缺陷
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00125-8
A Misiuk , H.B Surma , M Lopez
{"title":"Oxygen-related micro-defects in Czochralski silicon annealed at enhanced stress conditions","authors":"A Misiuk ,&nbsp;H.B Surma ,&nbsp;M Lopez","doi":"10.1016/S1466-6049(01)00125-8","DOIUrl":"10.1016/S1466-6049(01)00125-8","url":null,"abstract":"<div><p><span>Effect of enhanced (up to 1.2 GPa) hydrostatic argon pressure on creation of oxygen-related micro-defects (such as oxygen clusters, OC’s, and precipitates, OP’s) in Cz–Si during high temperature–high pressure treatment, HT–HP, at up to 1400 K, was investigated by chemical selective etching, FTIR, and photoluminescence, PL, methods. Cz–Si contained interstitial oxygen, O</span><sub>i</sub>, with a concentration, <em>c</em><sub>0</sub>, up to 1.1×10<sup>18</sup> cm<sup>3</sup>; prior to the HT–HP treatment some samples were pre-annealed at (720, 830) K–10<sup>5</sup> Pa to create nucleation centres for O<sub>i</sub> precipitation. The HT–HP treatment results in decrease of <em>c</em><sub>0</sub>, revealing defect-related PL bands and enhanced (in comparison to effect of annealing at 10<sup>5</sup> Pa) creation of oxygen-related micro-defects.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1197-1199"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00125-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80116339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
NTC characteristics of bismuth based ceramic at high temperature 铋基陶瓷高温NTC特性研究
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00132-5
A Basu, A.W Brinkman, T Hashemi
{"title":"NTC characteristics of bismuth based ceramic at high temperature","authors":"A Basu,&nbsp;A.W Brinkman,&nbsp;T Hashemi","doi":"10.1016/S1466-6049(01)00132-5","DOIUrl":"10.1016/S1466-6049(01)00132-5","url":null,"abstract":"<div><p>NTC characteristics of a ceramic based on Bi<sub>2</sub>O<sub>3</sub> doped with TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub> and WO<sub>3</sub><span><span> have been studied over a temperature range of 100 to 700°C. The material was pressed into pellets and sintered in air from 700 to 1000°C at 100°C intervals for 14 h. The microstructure was studied using SEM and evidence of a sintered body with grain sizes approximately 7–10 μm was observed in the material fired at 1000°C. XRD analysis indicated the emergence of a monophase material when sintered at 1000°C, which clearly verified along with the SEM studies, the completion of the sintering process. Electrical characterisation of the material was done by measuring the resistance and the capacitance over a temperature range of 100 to 700°C, in air. The material showed good NTC characteristics over the whole range of temperature with </span>thermistor constants </span><em>B</em>=4840 K and Δ<em>E</em>=386 meV. The capacitance changed significantly over the temperature range (∼10<sup>−11</sup> F at 100°C to ∼10<sup>−6</sup> F at 700°C).</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1219-1221"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00132-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82719158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Antimony dopant redistribution during copper silicide formation 硅化铜形成过程中锑掺杂物的重分布
International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI: 10.1016/S1466-6049(01)00141-6
M Benkerri , R Halimi , A Bouabellou , A Mosser , J.P Sens
{"title":"Antimony dopant redistribution during copper silicide formation","authors":"M Benkerri ,&nbsp;R Halimi ,&nbsp;A Bouabellou ,&nbsp;A Mosser ,&nbsp;J.P Sens","doi":"10.1016/S1466-6049(01)00141-6","DOIUrl":"10.1016/S1466-6049(01)00141-6","url":null,"abstract":"<div><p><span>In the present work, copper silicide formation and the redistribution of implanted Sb</span><sup>+</sup><span> ions were studied by means of Rutherford backscattering spectrometry<span> (RBS) and X-ray diffraction (XRD). Copper thin films, of 500 Å thickness, were evaporated, at room temperature, onto Sb implanted Si(111) wafers. Two doses, 5×10</span></span><sup>14</sup> and 5×10<sup>15</sup> Sb<sup>+</sup> cm<sup>−2</sup>, were used at 130 keV. The samples were heat treated in vacuum by conventional thermal annealing in the temperatures range 500–700°C for various times. It was observed that, independent of Sb implant dose, two silicides (Cu<sub>3</sub>Si and Cu<sub>4</sub><span>Si) were formed in the considered temperature range. Antimony ions implanted initially in the Si substrates were found to redistribute towards the sample free surface.</span></p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1299-1301"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00141-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85934950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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