International Journal of Inorganic Materials最新文献_第5页

Elimination of silicon hillocks using an alkaline complexant etching system 用碱性络合剂蚀刻系统消除硅丘

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00117-9

Carmen Moldovan, Rodica Iosub, Mircea Modreanu

引用次数: 5

Ordered mesoporous materials: composition and topology control through chemistry 有序介孔材料:化学组成与拓扑控制

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00114-3

J. El Haskouri , S. Cabrera , M. Caldés , J. Alamo , A. Beltrán-Porter , M.D. Marcos , P. Amorós , D. Beltrán-Porter

引用次数: 18

Liquid phase sintering of NiCuZn ferrite and its magnetic properties NiCuZn铁氧体的液相烧结及其磁性能

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00123-4

Yuh-Ruey Wang, Sea-Fue Wang

引用次数: 19

The role of oxygen in formation of radiative recombination centers in ZnSe1−xTex crystals 氧在ZnSe1−xTex晶体辐射复合中心形成中的作用

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00138-6

V.D Ryzhikov , N.G Starzhinskiy , L.P Gal’chinetskii , V.I Silin , G Tamulaitis , E.K Lisetskaya

{"title":"The role of oxygen in formation of radiative recombination centers in ZnSe1−xTex crystals","authors":"V.D Ryzhikov , N.G Starzhinskiy , L.P Gal’chinetskii , V.I Silin , G Tamulaitis , E.K Lisetskaya","doi":"10.1016/S1466-6049(01)00138-6","DOIUrl":"10.1016/S1466-6049(01)00138-6","url":null,"abstract":"<div>The present study was aimed at revealing the influence of oxygen on formation of alloy ZnSe–ZnTe as well as on development of luminescence centers under thermal treatment of scintillators based on isovalently doped ZnSe crystals. The presence of oxygen in ZnSe(Te) crystals as ZnO phase has been shown to hinder formation of (V′ZnTexSe)′ type luminescence centers responsible for luminescence band peaked at 635–640 nm, which is the principal emission band of this scintillator. In ZnSe(Te) crystals doped by mechanically stimulated ion implantation with active forms of oxygen (O′, Ox, O′2, etc.), luminescence quenching effects are not observed. However, the luminescence band in these crystals is blueshifted towards 600–610 nm. Strong luminescence band peaked at λmax=590–610 nm is observed in Te-free ZnSe crystals doped with oxygen in active forms. The experimental results are interpreted by formation of centers (Zni⋅Oxi)⋅ or (Zni⋅OxSe)⋅. Having larger charge carrier capture cross-section than (Zn⋅iV′ZnTexSe)x, the oxygen-containing centers determine kinetics of luminescence in ZnSe1−xTex crystals (x<0.001) treated by active forms of oxygen during mechanical activation of the initial raw material for crystal growth.</div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1227-1229"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00138-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74171611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 20

High temperature electrical conductivity in Ga and In solubility limit region in ZnS Ga的高温电导率和ZnS的in溶解度极限区

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00159-3

K. Lott , M. Raukas , O. Volobujeva , A. Vishnjakov , A. Grebennik

引用次数: 5

Stress-induced transformation of microdefects in neutron irradiated Czochralski silicon 中子辐照恰克拉尔斯基硅微缺陷的应力诱导转变

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00146-5

J Bak-Misiuk , C.A Londos , A Misiuk , L.G Fytros , H.B Surma , J Trela , K Papastergiou , J Domagala

引用次数: 0

Intercalation chemistry of superconducting zirconium and hafnium nitride halides 超导氮化锆和铪卤化物的插层化学

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00135-0

M.R Palacı́n , J Oró-Solé , M Vlassov , B Martı́nez , D Beltrán-Porter , M.T Caldés , A Fuertes

{"title":"Intercalation chemistry of superconducting zirconium and hafnium nitride halides","authors":"M.R Palacı́n , J Oró-Solé , M Vlassov , B Martı́nez , D Beltrán-Porter , M.T Caldés , A Fuertes","doi":"10.1016/S1466-6049(01)00135-0","DOIUrl":"10.1016/S1466-6049(01)00135-0","url":null,"abstract":"<div>Lithium intercalation in MNX (M=Zr, Hf; X=Cl, Br) may lead to superconducting compounds with critical temperatures up to 24 K. Electrochemical lithiation experiments agree with the results obtained with chemical methods, as samples with larger capacity on discharge are also those having larger lithium contents after chemical lithiation. Variations exist in the electrochemical profiles of different batches for these compounds indicating differences in the intercalation reaction pathway. High-resolution electron microscopy images confirm the structural model isotypic to SmSI for β-MNX phases. The major part of crystals from ZrNX as well as from the HfNCl samples showing a high lithium intercalation degree exhibit a regular stacking of the layers, being almost free of defects. In contrast, samples with low lithium uptakes show a high proportion of crystals with a HfO2 layer at their thin edges. In agreement with these results, magnetic measurements for LixHfNCl indicate, in contrast to LixZrNX compounds, small superconducting fractions and very broad transitions consistent with a distribution of critical temperatures and a heterogeneous nature of the samples.</div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1291-1293"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00135-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89579675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Epitaxy induced phase stabilization: a comparative experimental and elasticity-based theoretical study on MBE grown PbSe/CaF2/Si epilayer 外延诱导相稳定:MBE生长PbSe/CaF2/Si薄膜的实验与弹性理论对比研究

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00142-8

G Breton , T Maurice , P Masri , S Charar , M Averous

{"title":"Epitaxy induced phase stabilization: a comparative experimental and elasticity-based theoretical study on MBE grown PbSe/CaF2/Si epilayer","authors":"G Breton , T Maurice , P Masri , S Charar , M Averous","doi":"10.1016/S1466-6049(01)00142-8","DOIUrl":"10.1016/S1466-6049(01)00142-8","url":null,"abstract":"<div>Modern epitaxial growth techniques show that material-phase stabilization can be achieved by epitaxial growth provided that suitable substrate (s) are used. Buffer layers (BL) play a vital role in epitaxial growth optimisation. By applying through the BL/s heterostructure continuity conditions on relevant strain-related features, we perform a self-consistent growth-optimisation strategy involving BL compositions. The calculation of these strain-related phase-dependent features enables to achieve an approach of as-grown material phase determination based on epitaxy experiments and theoretical previsions. To illustrate this methodology, we have investigated the lead salt IV–VI PbSe/CaF2/Si(111) epilayer grown by MBE. For the optimised BL, a thin CaFSe layer has been grown under Se flux of CaF2 layer before deposition of the PbSe layer. The efficiency of the continuity conditions in optimising MBE growth is shown by characterising all samples by high-resolution X-ray diffraction, atomic force microscopy for structural quality and Hall effect for electrical properties.</div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1237-1239"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00142-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91461696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Notes for Authors–International Journal of Inorganic Materials 作者说明-国际无机材料杂志

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00206-9

引用次数: 0

International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00125-8

A Misiuk , H.B Surma , M Lopez

引用次数: 6