{"title":"International Journal of Inorganic Materials – merger with Solid State Sciences","authors":"","doi":"10.1016/S1466-6049(01)00203-3","DOIUrl":"https://doi.org/10.1016/S1466-6049(01)00203-3","url":null,"abstract":"","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Page 1095"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00203-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138306216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. Wong-Ng , Q. Huang , I. Levin , J.A. Kaduk , J. Dillingham , T. Haugan , J. Suh , L.P. Cook
{"title":"Crystal chemistry and phase equilibria of selected SrO–R2O3–CuOx and related systems; R=lanthanides and yttrium","authors":"W. Wong-Ng , Q. Huang , I. Levin , J.A. Kaduk , J. Dillingham , T. Haugan , J. Suh , L.P. Cook","doi":"10.1016/S1466-6049(01)00133-7","DOIUrl":"10.1016/S1466-6049(01)00133-7","url":null,"abstract":"<div><p>This paper investigates and reviews the trend of phase formation and crystal chemistry of selected series of compounds in SrO–R<sub>2</sub>O<sub>3</sub>–CuO<sub><em>x</em></sub> and related systems. Including in this discussion are (Ba,Sr)<sub>2</sub>RCu<sub>3</sub>O<sub>6+<em>x</em></sub>, Sr<sub>2</sub>R(Cu,M)<sub>3</sub>O<sub>6+<em>x</em></sub>, where M=selected representative and transition elements, (Sr,R)<sub>14</sub>Cu<sub>24</sub>O<sub><em>x</em></sub> (14–24), Sr<sub>2−<em>x</em></sub>R<sub>1+<em>x</em></sub>Cu<sub>2</sub>O<sub><em>x</em></sub> (212), and Sr<sub>1+<em>x</em></sub>R<sub>2+<em>x</em></sub>Cu<sub>2</sub>O<sub><em>z</em></sub> (122). The subsolidus phase relationships in systems with R=La, Nd, Dy, Ho, Y and Yb are also discussed.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1283-1290"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00133-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84212513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Correlation between the microscopic and macroscopic characteristics of SnO2 thin film gas sensors","authors":"Andreia Lopes , Elvira Fortunato , Patrı́cia Nunes , Paula Vilarinho , Rodrigo Martins","doi":"10.1016/S1466-6049(01)00160-X","DOIUrl":"10.1016/S1466-6049(01)00160-X","url":null,"abstract":"<div><p><span>Hall effect measurements have been used to evaluate the conduction mechanism, exhibited by tin oxide thin film gas sensors deposited by </span>spray pyrolysis. Two experiments have been carried out: (i) Hall measurements in air and (ii) in the presence of methane (first results reported), both as a function of temperature. From the measurements performed it was possible to infer the potential barrier and its dependence with the atmosphere used. The results obtained for the carrier concentration and mobility have been analysed in the light of the oxygen diffusion mechanism at grain boundaries by using the grain boundary-trapping model. In the presence of the methane gas the electrical resistivity decreases due to the lowering of the inter-grain boundary barrier height.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1349-1351"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00160-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86759415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T Feltgen , J.H Greenberg , A.N Guskov , M Fiederle , K.W Benz
{"title":"P–T–X phase equilibrium studies in Zn–Te for crystal growth by the Markov method","authors":"T Feltgen , J.H Greenberg , A.N Guskov , M Fiederle , K.W Benz","doi":"10.1016/S1466-6049(01)00149-0","DOIUrl":"10.1016/S1466-6049(01)00149-0","url":null,"abstract":"<div><p>Synchrotron topography characterization of vapor grown ZnTe crystals showed that the available data in this system are not sufficient to control the growth parameters. First <em>P</em>–<em>T</em>–<em>X</em> phase equilibrium studies confirm that the stoichiometric plane <em>X</em>=50 at.% Te is completely outside of the single-phase volume of ZnTe. The Te boundary exhibits retrograde solubility. The maximum Te non-stoichiometry of 0.0186 at.% was found at <em>T</em>=1344 K.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1241-1244"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00149-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81668985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P Nekvindová , J Špirková , J Vacı́k , I Červená , V Peřina , J Schröfel
{"title":"Importance of crystal structure of the substrate for diffusion technologies of waveguides fabrication","authors":"P Nekvindová , J Špirková , J Vacı́k , I Červená , V Peřina , J Schröfel","doi":"10.1016/S1466-6049(01)00150-7","DOIUrl":"10.1016/S1466-6049(01)00150-7","url":null,"abstract":"<div><p><span>Effect of different crystallographic structure of various substrate cuts on diffusion processes into optical crystals is demonstrated for lithium niobate and sapphire. After the low or moderate temperature diffusion processes the X-cuts, which are parallel to the </span><em>C</em><sub>3</sub><span> axis, always contained much more dopants comparing with the Z-cuts, which are oriented perpendicularly to the </span><em>C</em><sub>3</sub><span>. This has been proved for annealed proton exchange (APE) technology for fabrication of optical waveguides<span> in lithium niobate and for the moderate temperature incorporation of erbium ions into both materials. Thus the possibility of localized doping by Er</span></span><sup>3+</sup> diffusion at moderate (lower then 500°C) temperature is for the first time demonstrated for sapphire single crystal wafers. The strong anisotropy of the doping is explained on the bases of suitable orientation of the cleavage planes to the substrates surfaces in the X-cuts that allows for better penetration of the diffusing particles into the material.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1245-1247"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00150-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89427728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optimization of (Ti,Al)N hard coatings by a combinatorial approach","authors":"R Cremer, D Neuschütz","doi":"10.1016/S1466-6049(01)00121-0","DOIUrl":"10.1016/S1466-6049(01)00121-0","url":null,"abstract":"<div><p>Combinatorial synthesis and screening is an established technique in the pharmaceutical industry. Recently combinatorial approaches have been made to the screening of superconductive, magnetoresistant and photoluminescent materials [Angew. Chem. Int. Ed., 38(17) (1999) 2494]. Although the development of multicomponent hard coatings by a combinatorial approach could lead to a significant decrease in cost and time, to our knowledge, no paper has been published in this field up to now. In this paper, the deposition and characterization of laterally graded (Ti,Al)N hard coatings with compositions from nearly pure TiN to AlN<span> is presented. The coatings have been deposited by reactive magnetron sputtering<span>, using an aluminum and a titanium target at a low angle to the substrate surface as well as a system of apertures. The relation between composition and oxidation resistance of the ternary films has been investigated. The results illustrate that the combinatorial approach is a powerful and cost effective tool for the development and optimization of new materials for hard coatings.</span></span></p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1181-1184"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00121-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73502476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Structural and electrochemical features of fast oxide ion conductors","authors":"Jean-Claude Boivin","doi":"10.1016/S1466-6049(01)00118-0","DOIUrl":"10.1016/S1466-6049(01)00118-0","url":null,"abstract":"<div><p>New fast oxide ion conductors for low temperature applications (400–600°C) have been proposed during recent years. These materials exhibit structural features rather different from that of the well-known zirconia-based electrolytes. The aim of this paper is to analyse the main structural characteristics of these various classes of materials to propose them as a guideline for designing new oxide ion conductors. The development of efficient low temperature devices also implies association of a fast electrolyte to a very active electrode system which must be able to support oxygen molecule dissociation and recombination at high current densities. The BIMEVOX materials offer the unique opportunity of being able to act both as the electrolyte and the electrodes, overcoming many chemical and mechanical problems. This point will also be discussed.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1261-1266"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00118-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85278030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nitridosilicates, oxonitridosilicates (sions), and oxonitridoaluminosilicates (sialons)","authors":"Wolfgang Schnick","doi":"10.1016/S1466-6049(01)00120-9","DOIUrl":"10.1016/S1466-6049(01)00120-9","url":null,"abstract":"<div><p>The new oxonitridosilicate (sion) Ce<sub>4</sub>[Si<sub>4</sub>O<sub>4</sub>N<sub>6</sub>]O and the sialons Sr<sub>3</sub>Ln<sub>10</sub>Si<sub>18</sub>Al<sub>12</sub>O<sub>18</sub>N<sub>36</sub> (Ln=Ce, Pr, Nd) and Sr<sub>10</sub>Sm<sub>6</sub>Si<sub>30</sub>Al<sub>6</sub>O<sub>7</sub>N<sub>54</sub> were synthesised as coarsely crystalline products by high-temperature reaction using a radiofrequency furnace. The crystal structures were determined by single-crystal X-ray diffraction and powder neutron-diffraction (Ce<sub>4</sub>[Si<sub>4</sub>O<sub>4</sub>N<sub>6</sub>]O and Sr<sub>3</sub>Pr<sub>10</sub>Si<sub>18</sub>Al<sub>12</sub>O<sub>18</sub>N<sub>36</sub>). Ce<sub>4</sub>[Si<sub>4</sub>O<sub>4</sub>N<sub>6</sub>]O represents the first hyperbolically layered silicate. The Si/O/N network is built up of Q<sup>3</sup> type SiON<sub>3</sub> tetrahedra enveloping the large [Ce<sub>4</sub>O]<sup>10+</sup> cations. The sialons Sr<sub>3</sub>Ln<sub>10</sub>Si<sub>18</sub>Al<sub>12</sub>O<sub>18</sub>N<sub>36</sub> contain a complex network of corner sharing SiON<sub>3</sub>, SiN<sub>4</sub>, and AlON<sub>3</sub> tetrahedra, while Sr<sub>10</sub>Sm<sub>6</sub>Si<sub>30</sub>Al<sub>6</sub>O<sub>7</sub>N<sub>54</sub> is built up by a capped double-layer structure of SiON<sub>3</sub>, SiN<sub>4</sub>, AlON<sub>3</sub>, and AlN<sub>4</sub> tetrahedra. The crystallographic ordering of Al/Si and O/N, respectively, was investigated by refinement of the neutron powder diffraction data and lattice energy calculations (MAPLE) on the basis of the single-crystal X-ray diffraction data. Hardness investigations using single crystals of Sr<sub>3</sub>Pr<sub>10</sub>Si<sub>18</sub>Al<sub>12</sub>O<sub>18</sub>N<sub>36</sub><span> yielded an averaged Vickers hardness of 22.0 GPa.</span></p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1267-1272"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00120-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83439241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C Sekar , T Watanabe , A Matsuda , H Shibata , Y Zenitani , J Akimitsu
{"title":"Crystal growth and transport properties of 4-leg spin-ladder compound La2Cu2O5: occurrence of insulator–metal transition","authors":"C Sekar , T Watanabe , A Matsuda , H Shibata , Y Zenitani , J Akimitsu","doi":"10.1016/S1466-6049(01)00127-1","DOIUrl":"10.1016/S1466-6049(01)00127-1","url":null,"abstract":"<div><p>A remarkable metal–insulator transition has been observed, for the first time, in hole-doped spin ladder compound La<sub>2</sub>Cu<sub>2</sub>O<sub>5</sub> (4-leg) single crystals. Hole-doping was carried out by means of high-oxygen-pressure annealing at 600°C under a pressure of 400 atm (20%O<sub>2</sub>+80%Ar at a total pressure of 2000 atm) using a hot-isostatic-pressing (HIP) furnace. In order to realize metallicity, a prolonged HIP-treatment for about 22 days or more is required. However, this annealing period is reduced to about 5–6 days, when the crystals are grown from the starting charges containing Ag in the form of Ag<sub>2</sub>O. Even in the as-grown state, the measured room-temperature resistivity is about two to three orders of magnitude lower than that of La<sub>2</sub>Cu<sub>2</sub>O<sub>5</sub> crystals grown from charges without silver. The results show that the silver addition facilitates the oxygenation of the La<sub>2</sub>Cu<sub>2</sub>O<sub>5</sub> crystals.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1201-1203"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00127-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83774199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of the deposition conditions on the gas sensitivity of zinc oxide thin films deposited by spray pyrolysis","authors":"P Nunes, E Fortunato, A Lopes, R Martins","doi":"10.1016/S1466-6049(01)00136-2","DOIUrl":"10.1016/S1466-6049(01)00136-2","url":null,"abstract":"<div><p><span><span>In this work we present preliminary results on the sensitivity to methane gas of zinc oxide thin films deposited by </span>spray pyrolysis. It was found that using highly resistive (above 10</span><sup>4</sup> Ω cm) thin films and by performing the measurements at 200°C a sensitivity better than one order of magnitude was found to detect 2000 ppm of methane. A linear dependence on the sensitivity between 100 and 2000 ppm of methane was also obtained.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1129-1131"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00136-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83956522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}