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International Journal of Inorganic Materials最新文献

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Doping mechanisms and electrical properties of La-doped BaTiO3 ceramics la掺杂BaTiO3陶瓷的掺杂机理及电学性能
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00128-3
Finlay D Morrison, Derek C Sinclair, Anthony R West
{"title":"Doping mechanisms and electrical properties of La-doped BaTiO3 ceramics","authors":"Finlay D Morrison,&nbsp;Derek C Sinclair,&nbsp;Anthony R West","doi":"10.1016/S1466-6049(01)00128-3","DOIUrl":"10.1016/S1466-6049(01)00128-3","url":null,"abstract":"<div><p>The electrical properties of Ba<sub>1−<em>x</em></sub>La<sub><em>x</em></sub>Ti<sub>1−<em>x</em>/4</sub>O<sub>3</sub> ceramics where <em>x</em><span>≤0.20 were investigated by impedance spectroscopy after heat treatment in O</span><sub>2</sub>, Ar and air at 1350°C. Samples heated in O<sub>2</sub> were electrically insulating with very high maximum permittivities, ∼25,000 at <em>x</em>=0.06 and exhibited significant ‘relaxor-type’ behaviour at <em>x</em>=0.10. Samples heated in Ar were semiconducting for all <em>x</em> whereas air heated samples were electrically inhomogeneous. Semiconductivity in these materials is attributed to oxygen loss as opposed to La-donor doping.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1205-1210"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00128-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79116707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 121
Author Index Volume 3 作者索引第3卷
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00204-5
{"title":"Author Index Volume 3","authors":"","doi":"10.1016/S1466-6049(01)00204-5","DOIUrl":"https://doi.org/10.1016/S1466-6049(01)00204-5","url":null,"abstract":"","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages I-XIX"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00204-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138344984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystallographic control of the barrier structure in zinc oxide varistors 氧化锌压敏电阻中势垒结构的晶体学控制
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00109-X
C Leach
{"title":"Crystallographic control of the barrier structure in zinc oxide varistors","authors":"C Leach","doi":"10.1016/S1466-6049(01)00109-X","DOIUrl":"10.1016/S1466-6049(01)00109-X","url":null,"abstract":"<div><p><span>Scanning electron microscope (SEM) based remote electron beam induced current (REBIC) microscopy has been used to investigate the electrical characteristics of individual grain boundaries in a zinc oxide based varistor. Although some grain boundaries showed the expected ‘bright and dark’ contrast consistent with symmetrical, opposed, electric fields on either side of a charged grain boundary, the majority of interfaces are electrically asymmetric showing only </span><em>either</em> bright <em>or</em> dark contrast. In these cases, the application of an external voltage bias to the grain boundary of several ten’s of millivolts is necessary to restore a symmetrical barrier structure. The orientations of grains on either side of each grain boundary were determined using electron backscattered pattern (EBSP) analysis and the grain boundary plane orientation was calculated by observing the lateral shift of the grain boundary EBIC contrast peak with SEM beam voltage and, hence, penetration depth. It was found that the electrical asymmetry is governed by the orientations of the grain boundary planes on either side of the interface, demonstrating some crystallographic control of the barrier structure.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1117-1119"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00109-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83978505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Epitaxial perovskite rare-earth nickelates and their heterostructures with CMR manganites 外延钙钛矿型稀土镍酸盐及其与CMR锰矿的异质结构
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00115-5
M.A Novojilov , O.Yu Gorbenko , I.V Nikulin , I.E Graboy , A.R Kaul , N.A Babushkina , L.M Belova
{"title":"Epitaxial perovskite rare-earth nickelates and their heterostructures with CMR manganites","authors":"M.A Novojilov ,&nbsp;O.Yu Gorbenko ,&nbsp;I.V Nikulin ,&nbsp;I.E Graboy ,&nbsp;A.R Kaul ,&nbsp;N.A Babushkina ,&nbsp;L.M Belova","doi":"10.1016/S1466-6049(01)00115-5","DOIUrl":"10.1016/S1466-6049(01)00115-5","url":null,"abstract":"<div><p><span><span>Thin films of rare-earth </span>nickelates RNiO</span><sub>3</sub><span><span> (R=Pr, Nd, Sm, Gd) were prepared under a reduced oxygen pressure of &lt;0.02 bar by MOCVD on perovskite substrates. The film–substrate </span>lattice mismatch is critical for the epitaxial stabilization of RNiO</span><sub>3</sub>. Increase of the lattice mismatch or film thickness results in the deposition of rare-earth oxides and NiO instead of RNiO<sub>3</sub>. The transport properties of the films on LaAlO<sub>3</sub> were similar to those of the bulk material of the same composition under an applied pressure of 9 kbar. The properties of RNiO<sub>3</sub> films with a sharp metal-to-insulator transition can be effectively tuned by the lattice strain.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1165-1168"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00115-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80702195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Preparation and characterisation of NiMn2O4 films NiMn2O4薄膜的制备与表征
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00131-3
R. Schmidt, A.W. Brinkman
{"title":"Preparation and characterisation of NiMn2O4 films","authors":"R. Schmidt,&nbsp;A.W. Brinkman","doi":"10.1016/S1466-6049(01)00131-3","DOIUrl":"10.1016/S1466-6049(01)00131-3","url":null,"abstract":"<div><p><span>Thin films of NiMn</span><sub>2</sub>O<sub>4</sub><span> NTC thermistor material were produced by electron-beam-evaporation from phase pure NiMn</span><sub>2</sub>O<sub>4</sub> source material. The films were characterised using SEM, EDAX, XRD and an Alpha-Step stylus profileometer. Resistance vs. temperature characteristics were obtained over a wide range of temperature and suggested that the conduction mechanism was by variable range hopping. A theoretical model for the thickness profile of the films was derived and comparison of theory with experimental findings showed good agreement.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1215-1217"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00131-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81382290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Misfit accommodation of epitaxial La1−xAXMnO3 (A=Ca, Sr) thin films La1−xAXMnO3 (A=Ca, Sr)外延薄膜的失配调节
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00155-6
O.I Lebedev, G Van Tendeloo, S Amelinckx
{"title":"Misfit accommodation of epitaxial La1−xAXMnO3 (A=Ca, Sr) thin films","authors":"O.I Lebedev,&nbsp;G Van Tendeloo,&nbsp;S Amelinckx","doi":"10.1016/S1466-6049(01)00155-6","DOIUrl":"10.1016/S1466-6049(01)00155-6","url":null,"abstract":"<div><p><span>Thin film of La</span><sub>1−<em>x</em></sub>A<sub><em>x</em></sub>MnO<sub>3</sub><span><span> (A=Ca, Sr) grown epitaxially on substrates give a unique opportunity to induce different types of perovskite distortions by creating different stress fields resulting from </span>lattice mismatch with the substrate. Thin films of La</span><sub>0.67</sub>Ca<sub>0.33</sub>MnO<sub>3</sub> on a SrTiO<sub>3</sub>(<em>100</em>) substrate, with a misfit of 1.54% (<em>a</em><sub>F</sub>&lt;<em>a</em><sub>S</sub>), exhibit a remarkable microstructure. In direct contact with the SrTiO<sub>3</sub> substrate a thin perfectly coherent La<sub>1−<em>x</em></sub>Ca<sub><em>x</em></sub>MnO<sub>3</sub> layer, which exhibits a slightly distorted monoclinic symmetry, is formed. On top of this first layer a second thicker layer is grown; it has a columnar microstructure. For epitaxial La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>(LSMO) films on a LaAlO<sub>3</sub>(<em>001</em>) substrate the evolution of stress (2.77%, <em>a</em><sub>F</sub>&gt;<em>a</em><sub>S</sub><span>) in the film is function of film thickness and thermal treatment. Thin films (20 nm) are accommodated elastically. In thicker films the stress is partially relieved after annealing by the formation of a network of misfit dislocations with an edge character. For epitaxial La</span><sub>0.9</sub>Sr<sub>0.1</sub>MnO<sub>3</sub> films on SrTiO<sub>3</sub> (<em>100</em>) the small misfit (<em>a</em><sub>F</sub>≈<em>a</em><sub>S</sub>) is accommodated either purely elastically (for thin film) or by the formation of periodic microtwins.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1331-1337"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00155-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90594717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Grain boundary phase transitions and phase diagrams 晶界相变和相图
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00108-8
B.B Straumal , P Ziȩba , W Gust
{"title":"Grain boundary phase transitions and phase diagrams","authors":"B.B Straumal ,&nbsp;P Ziȩba ,&nbsp;W Gust","doi":"10.1016/S1466-6049(01)00108-8","DOIUrl":"10.1016/S1466-6049(01)00108-8","url":null,"abstract":"<div><p>Grain boundary (GB) phase transitions can change drastically the properties of polycrystals. The GB wetting phase transition can occur in the two-phase area of the bulk phase diagram where the liquid (L) and solid (S) phases are in equlibrium. The GB wetting tie line appears in the L+S area. Above the temperature of the GB wetting phase transition a GB cannot exist in equlibrium with the liquid bulk phase. The liquid phase has to substitute the GB and to separate both grains. The experimental data on GB wetting phase transitions in the systems Al–Sn, Al–Ga, Al–Sn–Ga, Cu–In, Cu–Bi, Fe–Si–Zn, Mo–Ni, W–Ni, Zn–Sn and Zn–In are analysed. The GB wetting tie line can continue in the one-phase area of the bulk phase diagram as a GB solidus line. This line represents the GB premelting or prewetting phase transitions. The GB properties change drastically when the GB solidus line is crossed by a change in the temperature or concentration. The experimental data on GB segregation, energy, mobility and diffusivity in the systems Cu–Bi, Al–Ga, Al–Pb and Fe–Si–Zn obtained both in polycrystals and bicrystals are analysed.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1113-1115"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00108-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78695615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 63
Colloidal processing of cordierite-based glass-ceramics 堇青石基微晶玻璃的胶体加工
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00152-0
Sen Mei, Juan Yang, J.M.F Ferreira
{"title":"Colloidal processing of cordierite-based glass-ceramics","authors":"Sen Mei,&nbsp;Juan Yang,&nbsp;J.M.F Ferreira","doi":"10.1016/S1466-6049(01)00152-0","DOIUrl":"10.1016/S1466-6049(01)00152-0","url":null,"abstract":"<div><p>In this work, five levels of dispersant concentrations were used to prepare cordierite-based glass ceramic suspensions with different solid loadings. The Bingham model could be used to characterise rheological behaviour of 50 wt.% solid loaded suspensions, whereas it gradually changed to shear thickening at higher dispersant concentrations as the solid loadings further increased (60, 70 wt.%). A critical dispersant concentration, which provided the lowest stress, was obtained at 0.6 wt.% for Dolapix. The particle size ratio between cordierite and glass powder also plays an important role in rheological properties of the suspensions and green densities. The green density increased as the solid loadings in the suspensions further increased.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1249-1252"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00152-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80411460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Nano-porous TiN thin films deposited by reactive sputtering method 反应溅射法制备纳米多孔TiN薄膜
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00124-6
Q Fang , J.-Y Zhang
{"title":"Nano-porous TiN thin films deposited by reactive sputtering method","authors":"Q Fang ,&nbsp;J.-Y Zhang","doi":"10.1016/S1466-6049(01)00124-6","DOIUrl":"10.1016/S1466-6049(01)00124-6","url":null,"abstract":"<div><p><span>Nano-porous TiN<span> thin films<span> deposited by a reactive sputtering process are reported. The effect of deposition parameters including sputtering power density, nitrogen partial pressure and deposition time on the thin film growth has been investigated. Crystallisation behaviour, chemical composition and microstructure of the deposited films were also investigated using X-ray diffraction, EDX and scanning electron microscopy. A test cell of Na(l)/beta” alumina/TiN was set up and tested at the temperature range of 600–800°C, in order to investigate the cell power density and the interfacial electrical property between the electrolyte and TiN electrode. The maximum power density of 0.20 W cm</span></span></span><sup>−2</sup> could be achieved with a large electrode area of 30 cm<sup>2</sup> at 800°C. The effect of microstructure of the nanometer size thin film electrodes on the conductive property has been studied and discussed.</p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1193-1196"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00124-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91371797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Self-tuning MOCVD approach to the growth of very smooth La1−xPbxMnO3 thin films La1−xPbxMnO3薄膜生长的自调谐MOCVD方法
International Journal of Inorganic Materials Pub Date : 2001-12-01 Epub Date: 2001-11-19 DOI: 10.1016/S1466-6049(01)00104-0
A.A Bosak, S.V Samoilenkov, O.Yu Gorbenko, A.N Botev, A.R Kaul
{"title":"Self-tuning MOCVD approach to the growth of very smooth La1−xPbxMnO3 thin films","authors":"A.A Bosak,&nbsp;S.V Samoilenkov,&nbsp;O.Yu Gorbenko,&nbsp;A.N Botev,&nbsp;A.R Kaul","doi":"10.1016/S1466-6049(01)00104-0","DOIUrl":"10.1016/S1466-6049(01)00104-0","url":null,"abstract":"<div><p>A new approach to the growth of complex oxide films free of any secondary phases using the volatile component was developed. The technique consists in a self-tuning of the oxide film composition during the growth due to the evaporation of the excess PbO. It was successfully used for the MOCVD growth of very smooth single phase La<sub>1−<em>x</em></sub>Pb<sub><em>x</em></sub>MnO<sub>3</sub> (<em>x</em><span>=0.1–0.6) films on perovskite substrates and MgO at a deposition rate of ∼1 μm</span> <!-->h<sup>−1</sup><span>. High quality of the films was explained by the presence of quasi-liquid PbO surface layer activating the surface diffusion during the growth.</span></p></div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1097-1099"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00104-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77223921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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