Crystal growth and transport properties of 4-leg spin-ladder compound La2Cu2O5: occurrence of insulator–metal transition

International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI:10.1016/S1466-6049(01)00127-1

C Sekar , T Watanabe , A Matsuda , H Shibata , Y Zenitani , J Akimitsu

{"title":"Crystal growth and transport properties of 4-leg spin-ladder compound La2Cu2O5: occurrence of insulator–metal transition","authors":"C Sekar , T Watanabe , A Matsuda , H Shibata , Y Zenitani , J Akimitsu","doi":"10.1016/S1466-6049(01)00127-1","DOIUrl":null,"url":null,"abstract":"<div>A remarkable metal–insulator transition has been observed, for the first time, in hole-doped spin ladder compound La2Cu2O5 (4-leg) single crystals. Hole-doping was carried out by means of high-oxygen-pressure annealing at 600°C under a pressure of 400 atm (20%O2+80%Ar at a total pressure of 2000 atm) using a hot-isostatic-pressing (HIP) furnace. In order to realize metallicity, a prolonged HIP-treatment for about 22 days or more is required. However, this annealing period is reduced to about 5–6 days, when the crystals are grown from the starting charges containing Ag in the form of Ag2O. Even in the as-grown state, the measured room-temperature resistivity is about two to three orders of magnitude lower than that of La2Cu2O5 crystals grown from charges without silver. The results show that the silver addition facilitates the oxygenation of the La2Cu2O5 crystals.</div>","PeriodicalId":100700,"journal":{"name":"International Journal of Inorganic Materials","volume":"3 8","pages":"Pages 1201-1203"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1466-6049(01)00127-1","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Inorganic Materials","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1466604901001271","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

A remarkable metal–insulator transition has been observed, for the first time, in hole-doped spin ladder compound La₂Cu₂O₅ (4-leg) single crystals. Hole-doping was carried out by means of high-oxygen-pressure annealing at 600°C under a pressure of 400 atm (20%O₂+80%Ar at a total pressure of 2000 atm) using a hot-isostatic-pressing (HIP) furnace. In order to realize metallicity, a prolonged HIP-treatment for about 22 days or more is required. However, this annealing period is reduced to about 5–6 days, when the crystals are grown from the starting charges containing Ag in the form of Ag₂O. Even in the as-grown state, the measured room-temperature resistivity is about two to three orders of magnitude lower than that of La₂Cu₂O₅ crystals grown from charges without silver. The results show that the silver addition facilitates the oxygenation of the La₂Cu₂O₅ crystals.

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四脚自旋阶梯化合物La2Cu2O5的晶体生长和输运性质:绝缘子-金属转变的发生

在空穴掺杂的自旋阶梯化合物La2Cu2O5 (4-leg)单晶中，首次观察到一种显著的金属-绝缘体转变。采用热等静压(HIP)炉，在600℃、400 atm (20%O2+80%Ar，总压2000 atm)的高压下退火进行空穴掺杂。为了实现金属丰度，需要长时间的髋部治疗约22天或更长时间。然而，当晶体以Ag2O形式从含有Ag的起始电荷生长时，此退火周期缩短至约5-6天。即使在生长状态下，测得的室温电阻率也比不含银的La2Cu2O5晶体低2 ~ 3个数量级。结果表明，银的加入有利于La2Cu2O5晶体的氧化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Journal of Inorganic Materials

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