中子辐照恰克拉尔斯基硅微缺陷的应力诱导转变

International Journal of Inorganic Materials Pub Date : 2001-12-01 DOI:10.1016/S1466-6049(01)00146-5

J Bak-Misiuk , C.A Londos , A Misiuk , L.G Fytros , H.B Surma , J Trela , K Papastergiou , J Domagala

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引用次数: 0

摘要

在1170 K-1 GPa的压力下，对辐照缺陷进行了外退火和热处理，研究了中子辐照Cz-Si的微观结构。x射线散射和缺陷尺寸与氧浓度和应力诱导的氧析出有关。压力处理使扩散散射减小，缺陷尺寸减小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Stress-induced transformation of microdefects in neutron irradiated Czochralski silicon

Microstructure of neutron irradiated Cz-Si has been examined after out-annealing of irradiation-induced defects and pressure treatment at 1170 K-1 GPa. X-ray diffuse scattering and defect dimensions are related to oxygen concentration and to stress-induced oxygen precipitation. The pressure treatment results in diminished diffuse scattering and defect dimensions.

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International Journal of Inorganic Materials

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