Stress-induced transformation of microdefects in neutron irradiated Czochralski silicon

Abstract

Microstructure of neutron irradiated Cz-Si has been examined after out-annealing of irradiation-induced defects and pressure treatment at 1170 K-1 GPa. X-ray diffuse scattering and defect dimensions are related to oxygen concentration and to stress-induced oxygen precipitation. The pressure treatment results in diminished diffuse scattering and defect dimensions.