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Chalcogenide Letters最新文献

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Influence of annealing on the properties of chemically prepared SnS thin films 退火对化学制备的SnS薄膜性能的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-05-01 DOI: 10.15251/cl.2023.205.315
S. John, M. Francis, A. P. Reena Mary, V. Geetha
{"title":"Influence of annealing on the properties of chemically prepared SnS thin films","authors":"S. John, M. Francis, A. P. Reena Mary, V. Geetha","doi":"10.15251/cl.2023.205.315","DOIUrl":"https://doi.org/10.15251/cl.2023.205.315","url":null,"abstract":"Thin films of SnS were deposited chemically, and they are annealed at four different temperatures: 100 °C, 150 °C, 200 °C, and 250 °C. X-ray diffraction, Raman analysis, UV-visible spectroscopy, field emission scanning electron microscopy, and energy dispersive spectroscopy were used to investigate the impact of annealing temperature on the structural, optical, morphological, and chemical properties of thin films. As the annealing temperature rose, it was seen from the XRD patterns that the crystallinity of SnS films improved. At 250 °C, the film was almost evaporated, and the XRD pattern showed no peaks at all. The lattice strain and crystallite size were computed from the WilliamsonHall plots. The crystallite size increased and the lattice strain decreased with the increase in the annealing temperature. According to optical investigations, the samples' optical bandgap shrank as the annealing temperature rose. Morphological studies showed the formation of well-adhered films, and as the annealing temperature increased, the film became denser and more continuous with larger grains. The atomic weight percentage of sulphur decreased as the annealing temperature increased, according to the EDS analysis. Photovoltaic structures with the configuration ITO/SnS/CdS/Ag were fabricated. From the I-V characteristics, it was observed that the cell structure formed with SnS annealed at 200 °C showed better cell performance.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49251597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gamma irradiation effects on Ag based ternary and quaternary chalcogenide films γ辐照对Ag基三元和四元硫族化合物薄膜的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-05-01 DOI: 10.15251/cl.2023.205.325
N. Yaduvanshi, R. Pandey, V. Khemchandani
{"title":"Gamma irradiation effects on Ag based ternary and quaternary chalcogenide films","authors":"N. Yaduvanshi, R. Pandey, V. Khemchandani","doi":"10.15251/cl.2023.205.325","DOIUrl":"https://doi.org/10.15251/cl.2023.205.325","url":null,"abstract":"In this work the effect of gamma irradiation (50 kGy and 100 kGy) on properties of InxSb20-x Ag10Se70 (x= 0,10,20) films has been discussed. X ray diffraction, Transmission Electron Microscopy, Optical properties and Electrical properties have been successfully studied. X Ray diffraction and TEM images reveal the amorphous nature of thin films. A change in the optical energy gap is observed after irradiation.The optical band gap increases accompanied with increase in tailing parameter.The value of N decreases with irradiation dose.It is found that crytallinity is higher for ternary system as compare to quarternary system. From electrical measurements it has been that conduction is in the localised state and the DC activation energy decrease upon gamma irradiations.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48577368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study and modeling of a CdS /PbS betavoltaic cell by Monte Carlo simulation CdS /PbS倍他伏打电池的蒙特卡罗模拟研究与建模
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-04-01 DOI: 10.15251/cl.2023.203.227
H. Moughli, B. Azeddine, Z. Tiouti, M. Rajczyk
{"title":"Study and modeling of a CdS /PbS betavoltaic cell by Monte Carlo simulation","authors":"H. Moughli, B. Azeddine, Z. Tiouti, M. Rajczyk","doi":"10.15251/cl.2023.203.227","DOIUrl":"https://doi.org/10.15251/cl.2023.203.227","url":null,"abstract":"In this paper, we present simulations of the concentration of electron-hole pairs generated from each point in solid targets under Ni-63 source bombardment of a CdS/PbS-based betavoltaic cell. This model is an accurate representation of the electronic interaction has been reported. We can obtain the distribution of the electron-hole pairs generated in the CdS/PbS junction as a function of the depth by Monte Carlo simulation, this distribution allowed us to find the concentrations of excess minority carriers as a function of the thickness, which can be function and injection into the continuity equations to determine the diffusion current and then the selected petavoltage properties. The model was tested for the Ni-63 CdS/PbS structure, with energy of 17 keV.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41633840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural, optical and electrical properties of CuO thin films deposited by spray pyrolysis technique: influence annealing process 喷雾热解法制备CuO薄膜的结构、光学和电学性能:退火工艺的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-04-01 DOI: 10.15251/cl.2023.204.277
R. Daira, B. Boudjema, A. Mohammedi
{"title":"Structural, optical and electrical properties of CuO thin films deposited by spray pyrolysis technique: influence annealing process","authors":"R. Daira, B. Boudjema, A. Mohammedi","doi":"10.15251/cl.2023.204.277","DOIUrl":"https://doi.org/10.15251/cl.2023.204.277","url":null,"abstract":"In this work, CuO thin films about the synthesis of the thin films are prepared on glass substrate using spray pyrolysis technique at room temperature different annealing times in temperature 450 0 C.In order to study the effect of annealing times onthe structural, optical and electrical properties.XRD analysis has shown that films with a polycrystalline structurehave a(Monoclinic) structure.In addition, the crystallite phase CuO increases with increasing of annealing temperature.Moreover, with a preferred orientation along (002) peak.The optical properties confirmed that the elaborated films have a transmittance of 70%. We have found that the band gap energy (Eg) is a decreasing function with respect to the annealing temperature time. In addition, the electrical resistivity varies from 18.97 to 4.58 KOhm.cm for the films grown at different annealing times.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48119922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling and simulation of PN junction CdS/CdTe for betavoltaic cell 用于贝塔伏打电池的PN结CdS/CdTe的建模与仿真
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-04-01 DOI: 10.15251/cl.2023.204.243
A. Talhi, B. Azeddine, Z. Tiouti, M. Rajczyk
{"title":"Modelling and simulation of PN junction CdS/CdTe for betavoltaic cell","authors":"A. Talhi, B. Azeddine, Z. Tiouti, M. Rajczyk","doi":"10.15251/cl.2023.204.243","DOIUrl":"https://doi.org/10.15251/cl.2023.204.243","url":null,"abstract":"The method for producing power by integrating a beta source to semiconductors junction’s devices is called as betavoltaic energy conversion. [1]. In this study by using Monte Carlo (MC) method to simulate the distribution of electron- hole pairs (EHP) generated at each point in the cell under bombardment of 63Ni source for betavoltaic cell then the result of that Monte Carlo simulation will be used in the modelling and simulation of a betavoltaic cell CdS/CdTe heterojunction and their characteristics.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41771353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effects of etching time and hydrogen peroxide concentration on the ZnO/glass substrate 腐蚀时间和过氧化氢浓度对ZnO/玻璃基板的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-04-01 DOI: 10.15251/cl.2023.204.293
S. Alias, M. Z. Mohd Yusoff, M. Yahya
{"title":"The effects of etching time and hydrogen peroxide concentration on the ZnO/glass substrate","authors":"S. Alias, M. Z. Mohd Yusoff, M. Yahya","doi":"10.15251/cl.2023.204.293","DOIUrl":"https://doi.org/10.15251/cl.2023.204.293","url":null,"abstract":"The purpose of the study is to determine the best technique for etching ZnO thin films. ZnO is deposited on the glass substrate using a radio frequency sputtering equipment. To etch the ZnO thin film, hydrogen peroxide (H2O2) concentrations of 10%, 20%, and 30% are utilised, with etching times of 30 and 60 seconds. The optical band gap is lowered after a specific quantity of etching, which shows that the film's crystallinity quality has improved. The impact of various ZnO thicknesses on the sample's optical properties is investigated using OPAL 2 simulator. In comparison to other ZnO layers of varied thickness, the OPAL 2 simulation shows that the 400 nm ZnO layer has the lowest transmission in the UV wavelength range.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"1 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67024788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells 基于软件包和偏置点模型的n-CdS/p-Si太阳能电池的卓越和创新分析:对制造太阳能电池的理论和实验特性的见解
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-04-01 DOI: 10.15251/cl.2023.204.261
A. A. Hassan, S. Y. Al-Nami, H. A. Alrafai, E. Al-Amery, E. R. Shaaban, A. Qasem
{"title":"Exceptional and innovational analysis of n-CdS/p-Si solar cells based on software packages and bias point models: insights into theoretical and experimental characteristics of fabricated solar cells","authors":"A. A. Hassan, S. Y. Al-Nami, H. A. Alrafai, E. Al-Amery, E. R. Shaaban, A. Qasem","doi":"10.15251/cl.2023.204.261","DOIUrl":"https://doi.org/10.15251/cl.2023.204.261","url":null,"abstract":"The characteristics of a single solar cell made by CdS thin film deposition on a silicon glass substrate were estimated using simulation models in this study. An aluminum electrode was attached to a silicon wafer to produce a heterojunction, and the indium fingers were fashioned into another electrode and connected directly to the CdS layer. Simulation steps were performed using PV*SOL 3.0 software package and bias points (ISC, VOC ) models. In addition to the use of advanced programs such as MATLAB software (Shell SQ150 PV module), Mathcad 2000 program, and Origin Lab 2019 program.Simulation programs for extracting photovoltaic parameters have been executed together with the laboratory procedures. The simulation programs and experimental procedures aimed in general to know the (current-voltage) and (power-voltage) characteristics of the studied single-diode photovoltaic.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43998301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Synthesis of Mn2+modified CdS nanoparticles and its application as catalyst in photodegradation of methyl red dye Mn2+修饰CdS纳米粒子的合成及其在甲基红染料光降解中的应用
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-04-01 DOI: 10.15251/cl.2023.204.254
R. Ranjan, C. Negi, K. P. Tiwary
{"title":"Synthesis of Mn2+modified CdS nanoparticles and its application as catalyst in photodegradation of methyl red dye","authors":"R. Ranjan, C. Negi, K. P. Tiwary","doi":"10.15251/cl.2023.204.254","DOIUrl":"https://doi.org/10.15251/cl.2023.204.254","url":null,"abstract":"Photocatalytic degradation of methyl red dye using Mn(5%) doped CdS nanoparticles was studied.Mn doped CdS nanoparticles was synthesized by microwave assisted solvo thermal method where the chemicals used wereCadmium Acetate [(CH3COO)2Cd, H2O], Manganese Chloride [MnCl2.2H2O] and Sodium Sulfide [Na2S.xH2O]. X-Ray diffraction(XRD) analysis was carried out in order to analyze the structural dimensions of the synthesized nanoparticles and the average crystallite size has been calculated at the full width half maximum (FWHM) of the diffraction peaks using Debye-Scherer equation and it was found to be around2.3nm. FTIR spectra analysis was done in order to analyze different functional and vibrational groups present in the as synthesized sample of Mn doped CdSnanoparticles.The morphology of sample wasstudied by scanning electron microscope. The aqueous solution of methyl red[C15H15N3O2] has been prepared and was mixed with the as synthesized Mn doped CdSnanoparticles and was exposed for photocatalytic degradation using 100 W bulb. UV-visible spectra of the light irradiated methyl red solutions were studied at different interval of time and no red shift was observed with increase of exposure time. The intensity of the absorption peak was also found to be reduced with the increasing time interval. The photo degradation of methyl red dye was observed up to 90% at the exposure time of 90 minutes.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45476375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectret effect in polymer-AIIBVI (CdS, ZnS) composites of photosensitive semiconductors 聚合物- aiibvi (CdS, ZnS)光敏半导体复合材料的光电驻极体效应
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-04-01 DOI: 10.15251/cl.2023.204.285
A. F. Gochuyeva, Kh. Kh. Hashimov, I. Y. Bayramov
{"title":"Photoelectret effect in polymer-AIIBVI (CdS, ZnS) composites of photosensitive semiconductors","authors":"A. F. Gochuyeva, Kh. Kh. Hashimov, I. Y. Bayramov","doi":"10.15251/cl.2023.204.285","DOIUrl":"https://doi.org/10.15251/cl.2023.204.285","url":null,"abstract":"The photoelectret effect in composite heterostructures consisting of polar (fluorinecontaining) and non-polar (polyolefins) polymers - high density polyethylene (HDPE), low density polyethylene (LDPE), F42, F2-ME and the inorganic phase AııBvı (CdS, ZnS) has been studied. It has been established that the difference in photoelectret potentials in a given volume share of the inorganic phase mainly depends on the polarity of the polymer matrix. A possible mechanism of the photoelectret effect formed under the combined action of a strong electric field and light in these composites. It has been experimentally established that the potential barrier formed at the polymer- AııBvı semiconductor interface separates the electric charge carriers formed as a result of the internal photoelectric effect and ensures the formation of an electret potential difference. The electret charge state of polymer- AııBvı composites was studied using the spectrum of thermally stimulated current.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47192431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Thermoluminescence peculiarities of CdS1−xSex–doped borosilicate glasses 掺CdS1−xsex硼硅酸盐玻璃的热释光特性
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2023-04-01 DOI: 10.15251/cl.2023.204.235
V. Edilashvili, Y. Blagidze, O. Gogolin, E. Tsitsishvili
{"title":"Thermoluminescence peculiarities of CdS1−xSex–doped borosilicate glasses","authors":"V. Edilashvili, Y. Blagidze, O. Gogolin, E. Tsitsishvili","doi":"10.15251/cl.2023.204.235","DOIUrl":"https://doi.org/10.15251/cl.2023.204.235","url":null,"abstract":"Thermally stimulated luminescence of the X-ray irradiated CdSSe-doped borosilicate glases have been studied. The two well defined temperarure maxima discovered for total thermoluminescence intensity, as well as the thermoluminescence dependence on the nanocrystal size and X-ray dose are discussed.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45743781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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