Chalcogenide Letters最新文献_第6页

Optical and photoconductivity properties of Mn doped nanocrystalline PbS thin films deposited by chemical bath deposition method 化学沉积法沉积的掺锰纳米晶 PbS 薄膜的光学和光电导特性

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.821

L. R. Singh, R. K. L. Singh, M. A. Hussain

引用次数: 0

Performance analysis of P-SnS thin films fabricated using CBD technique for photo detector applications 应用CBD技术制备的P-SnS薄膜的光电探测器性能分析

4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.779

P. Sateesh, A. Raveendra, M. Ashok, S.S. Sivaraju, K. Umadevi, N. Rajeswaran

{"title":"Performance analysis of P-SnS thin films fabricated using CBD technique for photo detector applications","authors":"P. Sateesh, A. Raveendra, M. Ashok, S.S. Sivaraju, K. Umadevi, N. Rajeswaran","doi":"10.15251/cl.2023.2011.779","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.779","url":null,"abstract":"In the present work, SnS thin films were prepared using the CBD technique at room temperature and varying annealing temperaturesfrom300 to 450 °C for photo detector applications. The prepared samples were characterized using different techniques for analyzing the structural, optical, morphological, and photo sensing properties of the samples. From XRD analysis, the diffraction pattern of all the prepared thin films shows the pristine SnS phase of the samples possessing an orthorhombic phase without the presence of any impurity phases. Among the fabricated thin films, the SnS thin film annealed at a temperature of 350 °C reveals the highest crystallite size. The Raman results showed the vibrational modes of SnS films and with the increase in growth temperature, the peaks are slightly shifted towards the lower wavelength region. Morphological results show that the SnS thin films exhibit a uniform morphology of 2-D petal-like morphology with different sizes. The UV-vis spectroscopic study shows the decrease in the bandgap value of the samples with the increase in annealing temperature. The photo sensing properties of the fabricated samples show the SnS sample annealed at 400 °C has a higherresponsivityvalueof6.40×10⁻²AW⁻¹,externalquantumefficiency(EQE)valueof14.9%, and the detectivity value of 6.05 × 10⁹ Jones. Finally, the transient photo response results suggest that the SnS annealed at 350 °C shows a rise and fall time of 1.5 and 2.5 s compared to the othersampleswhichwouldbebettersuitedforphotodetectorapplications. The electrical conductivity and photo-conductivity of the films increase by more than two orders with increase of film thickness from 170 nm to 915 nm. Hall Effect measurements confirm the p-type nature of the as-prepared SnS thin films.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135614855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical optimization of tin sulphide based solar cell for different buffer layers using SCAPS 利用 SCAPS 对不同缓冲层的硫化锡基太阳能电池进行数值优化

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.837

T. A. Chowdhury, S.M.T. Hossain, M.K. Anna, S.A. Ritu, S.F. Nuri

引用次数: 0

The effect of metal Ag nanoparticles on CdS/ZnTe heterojunction solar cells 金属银纳米颗粒对CdS/ZnTe异质结太阳能电池的影响

4区材料科学

Chalcogenide Letters Pub Date : 2023-10-01 DOI: 10.15251/cl.2023.209.677

S. H. Ibraheem, I. M. Abdulmajeed

引用次数: 0

Films of copper sulphide doped with nickel for optoelectronics: structural, optical, and magnetic characteristics 光电子学用掺杂镍的硫化铜薄膜:结构、光学和磁特性

4区材料科学

Chalcogenide Letters Pub Date : 2023-10-01 DOI: 10.15251/cl.2023.209.663

M. Ahmed, A. Alshahrie, E. R. Shaaban

{"title":"Films of copper sulphide doped with nickel for optoelectronics: structural, optical, and magnetic characteristics","authors":"M. Ahmed, A. Alshahrie, E. R. Shaaban","doi":"10.15251/cl.2023.209.663","DOIUrl":"https://doi.org/10.15251/cl.2023.209.663","url":null,"abstract":"Copper sulfide nanoparticles have a wide range of applications in various fields, and improving their physical properties is highly desirable. In this study, we investigate the influence of nickel concentrations on the structural, optical, and magnetic characteristics of CuS nanoparticles. The structural properties of Cu1-xNixS (x = 0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) were demonstrated using X-ray diffraction (XRD), which confirmed that all samples have a single hexagonal phase. The Energy Dispersive X-ray Technique (EDAX) was used to investigate the elemental analysis of Cu1-xNixS. The XPS study revealed the valence states of Cu, Ni, and S in the Cu0.94Ni0.06S nanoparticles, as well as surface oxidation. The optical characteristics were calculated based on the absorbance optical spectra of the films using a UV-vis-NIR double-beam spectrophotometer in the wavelength range of 400–1000 nm. The optical band gap for CuS and Ni-doped CuS samples decreases as the Ni concentration rises. Magnetic studies (using the M-H curve) demonstrate that 2% and 4% Ni-doped CuS nanoparticles exhibit strong ferromagnetism at ambient temperature and transition to a paramagnetic nature. These results suggest the potential of creating spintronic devices using Ni-doped CuS nanoparticles.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135459497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing tribological properties of MoSe2/SnSe2/SnSe@C through 2D nanosheets modification of 3D structures 通过二维纳米片修饰三维结构增强MoSe2/SnSe2/SnSe@C的摩擦学性能

4区材料科学

Chalcogenide Letters Pub Date : 2023-10-01 DOI: 10.15251/cl.2023.209.685

C. T. Zhu, F. Chen, W. Yan, Y. C. Wei, J. Xu, Y. P. Chen

{"title":"Enhancing tribological properties of MoSe2/SnSe2/SnSe@C through 2D nanosheets modification of 3D structures","authors":"C. T. Zhu, F. Chen, W. Yan, Y. C. Wei, J. Xu, Y. P. Chen","doi":"10.15251/cl.2023.209.685","DOIUrl":"https://doi.org/10.15251/cl.2023.209.685","url":null,"abstract":"This paper has prepared a new type of MoSe2/SnSe2/SnSe@C heterostructure nanocomposites by one-step hydrothermal method and systematically studied by XRD, SEM, and XPS. Furthermore, the tribological behavior of MoSe2/SnSe2/SnSe and MoSe2/SnSe2/SnSe@C heterojunction in pure oil was extensively examined in a ball-on-disk tribometer. The effects of applied load and rotational speed were also investigated. Compared with MoSe2/SnSe2/SnSe nanocomposites, MoSe2/SnSe2/SnSe@C achieved better friction properties. Especially, when the mass ratio of MoSe2/SnSe2/SnSe@C in the base oil is 1.5 wt%, the friction coefficient reaches the minimum value of 0.1. The results show that the introduction of carbon material can significantly improve the wear reduction and anti-wear properties of the matrix in lubricating oil. Additionally, the construction and excellent tribological properties of MoSe2/SnSe2/SnSe@C heterojunction would be beneficial for the design of novel nano-additives with 2D/3D structure for enhancing friction reduction and anti-wear, which also would expand their actual applications in the industry and agriculture.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135456924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of chemical bath deposited CdSSe thin films 化学浴沉积CdSSe薄膜的优化

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.209.657

M. A. Jafarov, E. F. Nasirov, V. Mammadov, S. A. Jahangirova

引用次数: 0

Calculation of the localized and extended energy states density for Ge60Se40-xTex alloy prepared by melting point method 熔点法制备Ge60Se40-xTex合金的局域和扩展能态密度计算

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.209.649

J. H. Azzawi, B. A. Ahmed, K. A. Jasim, E. M. T. Salman

{"title":"Calculation of the localized and extended energy states density for Ge60Se40-xTex alloy prepared by melting point method","authors":"J. H. Azzawi, B. A. Ahmed, K. A. Jasim, E. M. T. Salman","doi":"10.15251/cl.2023.209.649","DOIUrl":"https://doi.org/10.15251/cl.2023.209.649","url":null,"abstract":"The DC electrical conductivity properties of Ge60Se40-xTex alloy with x = 0, 5, 10, 15 and 20). The samples were formed in the form of discs with the thickness of 0.25–0.30 cm and the diameter of 1.5 cm. Samples were pressed under a pressure of 6 tons per cm2 , using a ton hydraulic press. They were prepared after being pressed using a ton hydraulic press using a hydraulic press. Melting point technology use to preper the samples. Continuous electrical conductivity properties were recorded from room temperature to 475 K. Experimental data indicates that glass containing 15% Te has the highest electrical conductivity allowing maximum current through the sample compared to Lu with other samples. Therefore, it is found that the DC conductivity increases with increasing Te concentration. The electrical conductivity properties show non-ohmic behavior due to the effects of temperature on the crystal structure of the samples, which indicates that the samples remain semi-conductive after partial replacement. Three conduction mechanisms are also observed for each sample at high, medium, and low temperatures. The Fermi level local and extended state densities and conductance parameters were calculated, and all were found to change with the change of Te concentration.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136375024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, electronic, elastic, and optical properties of chalcogenide perovskite SrZrS3 under ambient and high-pressure conditions 硫系钙钛矿SrZrS3在环境和高压条件下的结构、电子、弹性和光学性质

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.208.619

M. L. Han, Y. Hu

引用次数: 0

Rational design of MoS2 nanosheet/ MoS2 nanowire homostructures and their enhanced hydrogen evolution reaction 二硫化钼纳米片/二硫化钼纳米线的合理设计及其增强析氢反应

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.209.639

L. Yang, X. Q. Yuan, R. Y. Liu, R. X. Song, Q. W. Wang, W. Liang

引用次数: 0