Modelling and simulation of PN junction CdS/CdTe for betavoltaic cell

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-04-01 DOI:10.15251/cl.2023.204.243

A. Talhi, B. Azeddine, Z. Tiouti, M. Rajczyk

引用次数: 0

Abstract

The method for producing power by integrating a beta source to semiconductors junction’s devices is called as betavoltaic energy conversion. [1]. In this study by using Monte Carlo (MC) method to simulate the distribution of electron- hole pairs (EHP) generated at each point in the cell under bombardment of 63Ni source for betavoltaic cell then the result of that Monte Carlo simulation will be used in the modelling and simulation of a betavoltaic cell CdS/CdTe heterojunction and their characteristics.

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用于贝塔伏打电池的PN结CdS/CdTe的建模与仿真

通过将β源集成到半导体结的器件来产生功率的方法被称为β伏打能量转换。[1] 。在本研究中，通过使用蒙特卡罗（MC）方法模拟在63Ni源轰击下电池中每个点产生的电子-空穴对（EHP）的分布，将蒙特卡罗模拟的结果用于对β-伏打电池CdS/CdTe异质结及其特性的建模和模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.