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Chalcogenide Letters最新文献

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Thickness variation on some physical properties of CdS: MgO films 厚度变化对 CdS.MgO 薄膜某些物理性质的影响氧化镁薄膜
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-06-06 DOI: 10.15251/cl.2024.215.439
W. Albanda, M. H. Saeed, M. Z. Abdullah, M. Al-Timimi
{"title":"Thickness variation on some physical properties of CdS: MgO films","authors":"W. Albanda, M. H. Saeed, M. Z. Abdullah, M. Al-Timimi","doi":"10.15251/cl.2024.215.439","DOIUrl":"https://doi.org/10.15251/cl.2024.215.439","url":null,"abstract":"In this study, CdS: MgO films were synthesized using the chemical spray pyrolysis method, varying the film thickness. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the films, with an observed increase in average crystallite size corresponding to thicker films, and The films' surface morphology indicates an absence of crystal defects such as holes and voids . The investigation of energy gap and optical parameters revealed a dependency on film thickness, with the energy gap shifting from 2.412 eV for a thickness of 150 nm to 2.354 eV for a thickness of 750 nm. Hall effect measurements demonstrated an augmentation in carrier concentration with increasing film thickness. The findings suggest a substantial influence of thickness on the physical properties of CdS: MgO thin films. Notably, thicker films exhibit characteristics that make them promising candidates for application as absorber layers in solar cells. This research provides valuable insights into tailoring the properties of these films for optimal performance in solar energy conversion devices, emphasizing the importance of controlling thickness in achieving desired electronic and optical characteristics.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141379123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of the distance between evaporation source and substrate on formation of lead telluride (PbTe) nanostructures by vacuum thermal evaporation method 蒸发源和基底之间的距离对真空热蒸发法形成碲化镉铅（PbTe）纳米结构的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-06-06 DOI: 10.15251/cl.2024.215.431
G. Amirbekova, Zh. K. Tolepov, N. Guseinova, M. A. Tulegenova, T. Kuanyshbekov
{"title":"Influence of the distance between evaporation source and substrate on formation of lead telluride (PbTe) nanostructures by vacuum thermal evaporation method","authors":"G. Amirbekova, Zh. K. Tolepov, N. Guseinova, M. A. Tulegenova, T. Kuanyshbekov","doi":"10.15251/cl.2024.215.431","DOIUrl":"https://doi.org/10.15251/cl.2024.215.431","url":null,"abstract":"Lead telluride nanostructures were obtained on silicon substrates by thermal evaporation in vacuum. Growth occurred at three different distances between the evaporation source and the substrate. The distances between the evaporator and the evaporation source were 5 cm; 7.5 cm and 10 cm. Structural characteristics were studied using XRD, SEM, EDX, AFM analyses. These methods provided information about the crystal structure, morphology, microstructure and elemental composition of the material. X-ray diffraction analysis showed that thin films of lead telluride obtained by thermal evaporation in vacuum have a cubic crystal structure. This experimental work was carried out to determine the effect of distance on the structure of lead telluride (PbTe). During the experiment, the optimal modes for the formation of lead telluride (PbTe) nanostructures were determined, which was equal to d = 10 cm. It was found that lead telluride (PbTe) nanostructures are formed at this distance.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141377931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tribological properties of ternary heterojunction nanocomposites with MoS2 as the main body are enhanced 增强以 MoS2 为主体的三元异质结纳米复合材料的摩擦学性能
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-05-15 DOI: 10.15251/cl.2024.215.395
X. Y. Gao, P. Lu, Z. M. Xu, G. G. Tang
{"title":"Tribological properties of ternary heterojunction nanocomposites with MoS2 as the main body are enhanced","authors":"X. Y. Gao, P. Lu, Z. M. Xu, G. G. Tang","doi":"10.15251/cl.2024.215.395","DOIUrl":"https://doi.org/10.15251/cl.2024.215.395","url":null,"abstract":"g-C3N4 has a strong C-N covalent bond within the monolayer and a weak van der Waals force between the lamels, which enables it to have similar lubrication properties to other two-dimensional layered materials. In this study, a new type of g-C3N4/MoS2/ZnS heterogeneous nanocomposites was prepared by a one-step hydrothermal method XRD, SEM, FI-IR, and other methods were used to systematically study it. Furthermore, a ball-on-disk tribometer extensively examined the tribological behavior of g-C3N4/MoS2/ZnS heterojunction in pure oil. The relationship between applied load and rotational speed on performance is also revealed. Compared with g-C3N4 and g-C3N4/MoS2 nanocomposites, g-C3N4/MoS2/ZnS has better frictional properties. It is worth noting that when g-C3N4/MoS2/ZnS is in the base oil mass ratio at 1.0 wt.%, the friction coefficient is reduced by 49%. In addition, g-C3N4/MoS2/ZnS ternary heterojunction exhibits better tribological properties than g-C3N4/MoS2/ZnS mixture, expanding their practical applications in industry and agriculture.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141128206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of X-ray diffraction and Raman scattering in PbSe, PbS and PbS0,5Se0,5 thin films PbSe、PbS 和 PbS0,5Se0,5 薄膜的 X 射线衍射和拉曼散射特性
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-05-15 DOI: 10.15251/cl.2024.215.377
S. N. Yasinova, S. Mekhtiyeva, M.H. Huseynaliyev, R. Alekberov
{"title":"Properties of X-ray diffraction and Raman scattering in PbSe, PbS and PbS0,5Se0,5 thin films","authors":"S. N. Yasinova, S. Mekhtiyeva, M.H. Huseynaliyev, R. Alekberov","doi":"10.15251/cl.2024.215.377","DOIUrl":"https://doi.org/10.15251/cl.2024.215.377","url":null,"abstract":"Structural properties of PbSe, PbS and PbS0.5Se0.5 thin films and mechanisms of combinational scattering of light from phonons were studied by X-ray diffraction and Raman spectroscopy methods. The results of X-ray diffraction show that the crystallite sizes found in the thin layers of the studied substances are in the order of nanometers and vary in the interval d~10.7 ÷ 30.8 nm. It was determined that the scattering bands of the PbSe0.5S0.5 sample with large nanoparticle sizes shift to the region of large wave numbers compared to the scattering bands observed in the region of low wave numbers.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141127839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cohesive energy model for the optical properties in nanostructured materials of zinc sulfide and cadmium selenide 硫化锌和硒化镉纳米结构材料光学特性的内聚能模型
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-05-15 DOI: 10.15251/cl.2024.215.407
A. Mustafa, S. T. Turki Al-Rashid
{"title":"Cohesive energy model for the optical properties in nanostructured materials of zinc sulfide and cadmium selenide","authors":"A. Mustafa, S. T. Turki Al-Rashid","doi":"10.15251/cl.2024.215.407","DOIUrl":"https://doi.org/10.15251/cl.2024.215.407","url":null,"abstract":"Applying the cohesive energy model, this research theoretically studies how the size of nanoparticles affects their optical characteristics. The findings demonstrate that optical characteristics are size-dependent for nanoparticles, with an exponentially growing energy gap for nanoparticles on a scale of less than 4 nm. As the size of nanoparticles is reduced, the absorption wavelength also decreases. Compounds undergo a transition to a higher energy spectral area (blue shift) when their wavelength decreases; this change can make these compounds effective in certain optical nanodevices.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141127757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanical, magnetic, and electronic characteristics of Sm-based chalcogenides for spintronics and device applications 用于自旋电子学和设备应用的钐基铬化物的机械、磁性和电子特性
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-05-15 DOI: 10.15251/cl.2024.215.413
N. A. Noor, F. Nasrullah, I. M. Moussa, S. Mumtaz
{"title":"Mechanical, magnetic, and electronic characteristics of Sm-based chalcogenides for spintronics and device applications","authors":"N. A. Noor, F. Nasrullah, I. M. Moussa, S. Mumtaz","doi":"10.15251/cl.2024.215.413","DOIUrl":"https://doi.org/10.15251/cl.2024.215.413","url":null,"abstract":"To comprehend the mechanical, electronic, and magnetic properties of chalcogenides HgSm2S/Se4, a DFT-oriented thorough investigation is carried out. The elastic constants and spin-dependent electrical characteristics are determined by using the PBEsol-GGA functional and (mBJ) potential correspondingly. Through optimization, a sufficient amount of energy is discharged by the FM state as compared to nonmagnetic states. By investigating Born stability criteria and formation energy, the structural stabilities of both spinels are verified. The calculated Poisson's and Pugh's ratios showed that both spinels are ductile. The estimation of Curie temperature has supported the existence of a ferromagnetic nature at room temperature. Moreover, the presence of ferromagnetism in both spinels is confirmed by spin-oriented electrical characteristics, owing to the coupling between component states associated with Sm and S/Se.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141127960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of annealing temperature on nano crystalline description for CuZnS thin films 退火温度对铜锌锡薄膜纳米晶体描述的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-05-15 DOI: 10.15251/cl.2024.215.385
A. J. Soud, B. K. Al-Maiyaly
{"title":"Influence of annealing temperature on nano crystalline description for CuZnS thin films","authors":"A. J. Soud, B. K. Al-Maiyaly","doi":"10.15251/cl.2024.215.385","DOIUrl":"https://doi.org/10.15251/cl.2024.215.385","url":null,"abstract":"Copper Zinc Sulphide (Cu0.5Zn0.5S) alloy and thin films were fabricated in a vacuum. Nano crystallized (CZS) film with thick 450±20 nm was deposit at substrates glasses using thermal evaporation technique below ~ 2 × 10− 5 mbar vacuum to investigated the films structural, morphological and optical properties depended on annealing temperatures ( as-deposited, 423, 523 and 623) K for one hour. The influences annealed temperature on structurally besides morphologically characteristics on these films were investigated using XRD and AFM respectively. XRD confirms the formation a mixed hexagonal phase of CuS-ZnS in (102) direction with polycrystalline in nature having very fine crystallites size varying from (5.5-13.09) nm. AFM analysis shows the uniform distribution of closely packed grains, grain size for that film diverge on ranges as of (52.37 to 89.25) nm after annealed. The optical properties of all films prepared had been examined for the wavelength range 400 - 1000 nm using UV-Vis-NIR spectrometer. The band gaps of (Cu0.5Zn0.5S) films are obtained in the range of 2.4 to 1.9 eV, which makes it a suitable absorber as well as buffer/window layer for solar cell applications.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141128199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Facile hydrothermal synthesis of a multifunctional copper zinc tin sulfide (CZTS) nanoparticle-coated sepiolite fiber composite: structural characterization and photocatalytic properties 多功能硫化铜锌锡 (CZTS) 纳米粒子包覆海泡石纤维复合材料的简便水热合成：结构表征和光催化性能
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-05-13 DOI: 10.15251/cl.2024.214.335
M. Boonkam, P. Tamdee, P. Tongying
{"title":"Facile hydrothermal synthesis of a multifunctional copper zinc tin sulfide (CZTS) nanoparticle-coated sepiolite fiber composite: structural characterization and photocatalytic properties","authors":"M. Boonkam, P. Tamdee, P. Tongying","doi":"10.15251/cl.2024.214.335","DOIUrl":"https://doi.org/10.15251/cl.2024.214.335","url":null,"abstract":"This work presents a facile hydrothermal synthesis method for fabricating a multifunctional composite of copper zinc tin sulfide (CZTS) nanoparticles coated onto sepiolite fibers. Morphological analysis confirms the firm attachment of approximately 10 nm CZTS nanoparticles onto the sepiolite surface. Elemental analysis verifies the presence of constituent elements from both CZTS and sepiolite, with a slight deficiency in Cu and an abundance of Zn observed. The compositional formula of CZTS in the composite is estimated as Cu1.93Zn1.05Sn0.98S4.04. Notably, the material exhibits a narrow band gap of 1.5 eV, enabling effective utilization of the entire visible light spectrum, making it promising for photocatalytic applications. BET nitrogen adsorption/desorption measurements reveal a substantial surface area of approximately 85.720 m2 /g, confirming the composite’s versatility and applicability, particularly in photocatalysis and adsorption processes. Additionally, X-ray diffraction analysis indicates reflections consistent with the crystal structures of kasterite CZTS and sepiolite, further confirming the composite’s composition. The multifunctional CZTS/Sepiolite composite demonstrates exceptional potential for simultaneous photocatalytic degradation and adsorption of organic pollutants, presenting a promising avenue for sustainable water treatment applications.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140983180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties investigation of ZnS/porous silicon heterojunction for gas sensing 用于气体传感的 ZnS/多孔硅异质结的性能研究
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-05-13 DOI: 10.15251/cl.2024.214.343
F. B. Mohammed Ameen, M. H. Younus, G. G. Ali
{"title":"Properties investigation of ZnS/porous silicon heterojunction for gas sensing","authors":"F. B. Mohammed Ameen, M. H. Younus, G. G. Ali","doi":"10.15251/cl.2024.214.343","DOIUrl":"https://doi.org/10.15251/cl.2024.214.343","url":null,"abstract":"In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully synthesized over the Porous silicon substrate by the spray pyrolysis method. The properties of the as-prepared samples were characterized X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous silicon as a gas-sensing show that the maximum sensitivity is found to be 5.11 at ZnS concentration of 0.5 M and etching time of 15 min compared to the other sensitivities. The ZnS-PSi heterojunction based gas sensor may be used for UV-light photo-detectors due to a valuable properties such as high sensitivity and fast response.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140982361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Glass transition and crystallization of Se95Te5 chalcogenide glassy semiconductor Se95Te5 卤化物玻璃半导体的玻璃转变和结晶
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-05-13 DOI: 10.15251/cl.2024.214.355
S. U. Atayeva, A. Isayev, S. Mekhtiyeva, S. Garibova, R. Alekberov, F. N. Mammadov
{"title":"Glass transition and crystallization of Se95Te5 chalcogenide glassy semiconductor","authors":"S. U. Atayeva, A. Isayev, S. Mekhtiyeva, S. Garibova, R. Alekberov, F. N. Mammadov","doi":"10.15251/cl.2024.214.355","DOIUrl":"https://doi.org/10.15251/cl.2024.214.355","url":null,"abstract":"The study is dedicated to the investigation of thermo-physical characteristics of Se95Te5 chalcogenide glassy semiconductor during its glass formation and crystallization processes, employing various scanning rates of 5, 10, 15 and 20 K/min in non-isothermal modes through DSC measurement. Analysis of the structural relaxation kinetics involves the Kissinger’s, Augis and Bennett's, as well as Matusita’s approaches. Experimental data yield contains the determination of crucial parameters such as glass transition (𝑇𝑇𝑔𝑔), crystallization(𝑇𝑇𝑐𝑐), and melting temperatures alongside factors like reduced temperature of glass transition (𝑇𝑇𝑟𝑟𝑟𝑟), Hruby’s parameter (𝐾𝐾𝑔𝑔𝑔𝑔), fragility index (𝐹𝐹𝑖𝑖), Avrami exponents (n, m), glass transition (140.24 kJ/mol) and crystallization (Ec = 95.11 kJ/mol) energies, respectively. The results confirm that Se95Te5 chalcogenide system as an efficient glass former. Matusita’s method reveals that the crystallization mechanism (n = 2.51, m = 1.9) corresponds to volumetric nucleation with two-dimensional growth.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140982641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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