沉积电压对电火花沉积W-WS2涂层摩擦学性能的影响

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-11-10 DOI:10.15251/cl.2023.2010.741

T. X. Liu, C. A. Guo, F. S. Lu, X. Y. Zhang, L. Zhang, Z. J. Wang, Z. Y. Xu, G. L. Zhu

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引用次数: 0

摘要

采用W-WS2烧结电极在CrNi3MoVA钢基体上制备了不同沉积电压下的电火花沉积涂层，并对其摩擦学性能进行了研究。采用维氏硬度计、激光共聚焦扫描显微镜和摩擦计测试了涂层的显微硬度、粗糙度和摩擦学性能，并利用扫描电镜(SEM)、能谱仪(EDS)和x射线衍射仪(XRD)分析了涂层的形貌、组成和相结构。结果表明，随着沉积电压的增大，镀层的硬度和粗糙度均增大。涂层显著提高了CrNi3MoVA钢的摩擦学性能，在40v、60v和80v下沉积的涂层中，60v下沉积的涂层摩擦系数最小，耐磨性最好。

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Influence of deposition voltage on tribological properties of W-WS2 coatings deposited by electrospark deposition

Electrospark deposition coatings were prepared with different deposition voltage on CrNi3MoVA steel substrates by using a W-WS2 sintered electrode and their tribological properties were investigated. The microhardness, roughness and tribological properties of the coatings were tested by using Vickers hardness tester, confocal laser scanning microscope and tribometer, and the morphologies, composition and phase structure were obtained by utilizing scanning electron microscopy (SEM), energy dispersive X-ray spectrum (EDS) and X-ray diffraction(XRD). The results showed that with the increase of deposition voltage, the hardness and roughness of the coatings increase. The coatings remarkably increase the tribological properties of CrNi3MoVA steel, and among the three coatings deposited at 40 V, 60 V and 80 V, the coating deposited at 60 V has the smallest friction coefficient and the best wear resistance.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.