As-S-Sb-Te非晶薄膜的稳态和瞬态光电流

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-11-10 DOI:10.15251/cl.2023.2010.725

O. V. Iaseniuc, M. S. Iovu

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引用次数: 0

摘要

本文用光电方法研究了As-S-Sb-Te体系中一些纳米结构的四元硫族化合物。在顶铝照射电极的正负极性处，记录了稳态光电流Iph=(λ)的光谱分布和光电流Iph=(t)的弛豫曲线。在稳态光电流的光谱分布中，在λ=0.50÷0.92 mm (2.48÷1.35 eV)波长范围内，As1.17S2.7Sb0.83Te0.40、As1.04S2.4Sb0.96Te0.60、As0.63S2.7Sb1.37Te0.30和As0.56S2.4Sb1.44Te0.60等非晶态薄膜的光电流存在最大值，这是As2S3、Sb2S3和Sb2S3双星团簇存在的结果。利用光伏法得到带隙宽度的值，约为Eg =1.41 eV。

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Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films

In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te system have been investigated by a photoelectric method. The spectral distribution of steadystate photocurrent Iph=(λ) and the relaxation curves of photocurrent Iph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As2S3, Sb2S3 and Sb2S3. The photovoltaic method was used to obtain the value of the band gap width, which was about Eg =1.41 eV.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.