用于 X 射线成像的掺铒聚合物/砷-硒-硒结构

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-11-01 DOI:10.15251/cl.2023.2011.803

A. Chirita, A. Hustuc, N. Nasedchina, S. Vatavu

引用次数: 0

摘要

研究了用于 X 射线成像的聚合物/67%(As2S3)0,985(Bi2Se3)0,015:33% As2Se3 结构。结果表明，在钨阳极 X 射线管的 "白 "光谱辐射下，可以记录浮雕相图像。

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The structure polymer/As-Se-S doped by Bi for X-ray imaging

The polymer/67at %(As2S3)0,985(Bi2Se3)0,015:33 at.% As2Se3 structure for X-ray imaging has been investigated. The possibility of registering relief-phase images for radiation of “white” spectrum of tungsten anode X-ray tube was shown.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.