Chalcogenide Letters最新文献_第2页

Effect of Cu ratios dopant on ZnSe thin films structural and optical properties Cu比掺杂对ZnSe薄膜结构和光学性能的影响

4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.759

M. N. Abdel-Salam, N. Sabry, E. S. Yousef, E. R. Shaaban

{"title":"Effect of Cu ratios dopant on ZnSe thin films structural and optical properties","authors":"M. N. Abdel-Salam, N. Sabry, E. S. Yousef, E. R. Shaaban","doi":"10.15251/cl.2023.2011.759","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.759","url":null,"abstract":"This study focused to prepare poly-crystalline (ZnSe)1-x Cux thin films, where x values vary from 0 to 0.1 %. the effect of Cu ratios dopant on structural, phases and optical properties has been investigated. As prepared thin films were deposited onto a cleaning glass substrate under high vacuum conditions (10-7 mbr) at room temperature using the “ evaporation technique”. The analysis results according to data of the X-ray diffraction technique of all films refer to the growth polycrystalline with hexagonal wurtzite structure of Zn-Se with no presence of any further phases. The changes in numerous parameters such as volume of the unit cell, atomic packing factor, dislocation density, lattice constant and bond length with the Cu ratio were estimated and described. As well, the crystallite sizes,D, the lattice micro-strain,ε and dislocation density,δ have been calculated the results evidence that the micro-structural parameters enhancement with increment Cu atoms. On the other hand, the optical parameters of the as-synthesized films (ZnSe)1-xCux (0 ≤ x ≤ 0.1) were performed utilizing “UV–V is spectro -photometer” with a wavelength range of 300 to 2400 nm. The results show that as the Cu ratio increases, the absorption edge shifts to a higher wavelength and the optical band gap, Eg opt decreases from 2.63 eV to 2.52 eV. Finally, the behaviour of the optical constant parameters as real,εr/ imaginary, εi parts, dissipation factor,tan δ, volume/surface energy loss functions and dispersion parameters were shown to depend on the variation of the Cu ratio and wavelengths.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"2011 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135614842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis of wittichenite Cu3BiS3 thin films by sulfurizing thermally evaporated Cu-Bi metallic stacks 通过硫化热蒸发铜铋金属叠层合成维氏铜铋(Cu3BiS3)薄膜

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.797

U. Chalapathi, P. R. Prasad, C. P. Reddy, S. Sambasivam, P. Rosaiah, M. Ouladsmane, S. Alhammadi, S.M. Lee, S.H. Park

{"title":"Synthesis of wittichenite Cu3BiS3 thin films by sulfurizing thermally evaporated Cu-Bi metallic stacks","authors":"U. Chalapathi, P. R. Prasad, C. P. Reddy, S. Sambasivam, P. Rosaiah, M. Ouladsmane, S. Alhammadi, S.M. Lee, S.H. Park","doi":"10.15251/cl.2023.2011.797","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.797","url":null,"abstract":"Wittichenite Cu3BiS3 thin films have received significant interest as light harvesters owing to their suitable optoelectronic properties and presence of earth-abundant, and non-toxic elements. We have synthesized Cu3BiS3 thin films by a two-stage process; in which, Cu/Bi/Cu metallic stacks were thermally evaporated and then sulfurized at 400 o C for 10–60 min in a quartz tubular furnace. The influence of sulfurization time on the structural, microstructural, compositional, optical, and electrical properties of the films was investigated. The results revealed that the films were orthorhombic Cu3BiS3 with the following lattice parameters: a = 0.768 nm; b = 1.043 nm; and c = 0.674 nm. Films uniformity, compactness, and crystal grain size increased upon increasing the sulfurization duration. On increasing the sulfurization time, the elemental stoichiometry of the films improved, and the direct optical bandgap increased from 1.38 to 1.40 eV. Additionally, Cu3BiS3 films exhibited p-type electrical conductivity and the electrical resistivity decreased with the increasing sulfurization time. Consequently, the Cu3BiS3 films synthesized at 30- and 60-min sulfurization durations can be applied to thin-film solar cells.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"6 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139294476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The structure polymer/As-Se-S doped by Bi for X-ray imaging 用于 X 射线成像的掺铒聚合物/砷-硒-硒结构

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.803

A. Chirita, A. Hustuc, N. Nasedchina, S. Vatavu

引用次数: 0

Study of the microstructure of Cu2SnS3 films, prepared through sulfurization of metal precursors deposited by magnetron sputtering 研究通过磁控溅射沉积金属前驱体硫化制备的 Cu2SnS3 薄膜的微观结构

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.811

S. Petrosyan, A. Musayelyan, E. Zaretskaya, V. Gremenok, K. Buskis, A. Stanchik

{"title":"Study of the microstructure of Cu2SnS3 films, prepared through sulfurization of metal precursors deposited by magnetron sputtering","authors":"S. Petrosyan, A. Musayelyan, E. Zaretskaya, V. Gremenok, K. Buskis, A. Stanchik","doi":"10.15251/cl.2023.2011.811","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.811","url":null,"abstract":"We present the results of the study of the microstructure, X-ray diffraction and Raman scattering spectra of Cu2SnS3 (CTS) films synthesized at 500 o C by the sulfurization of SnCu stacked metal precursors with different annealing time. The results indicate that sulfurization time has a great influence on both composition and morphology of the film. It is shown that the process of formation of a single-phase CTS compound with a monoclinic structure and composition close to stoichiometry is completed for a synthesis time of 60 - 80 min. With an increase in the time of synthesis to 120 min, the preservation of the monoclinic structural modification of the material is observed, accompanied by a shift in the stoichiometric composition, namely copper enrichment, material delamination and degradation of microstructural characteristics. As a result, it was found that the most optimal conditions for the synthesis of a single-phase Cu2SnS3 compound of a monoclinic structure are the temperature 500 o С with the duration of the sulfurization process from 60 to 80 min.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"62 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139303458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The role of Cu doping in properties of CdZnS thin films Cu掺杂对CdZnS薄膜性能的影响

4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.789

K. A. Mohammed, R. A. Talib, B. Bhavani, N. H. J. Al Hasan, A. Kareem, F. H. Alsultany, R. S. Zabibah, M. A. Alkhafaji, S. Sharma

引用次数: 0

Optical and photoconductivity properties of Mn doped nanocrystalline PbS thin films deposited by chemical bath deposition method 化学沉积法沉积的掺锰纳米晶 PbS 薄膜的光学和光电导特性

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.821

L. R. Singh, R. K. L. Singh, M. A. Hussain

引用次数: 0

Performance analysis of P-SnS thin films fabricated using CBD technique for photo detector applications 应用CBD技术制备的P-SnS薄膜的光电探测器性能分析

4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.779

P. Sateesh, A. Raveendra, M. Ashok, S.S. Sivaraju, K. Umadevi, N. Rajeswaran

{"title":"Performance analysis of P-SnS thin films fabricated using CBD technique for photo detector applications","authors":"P. Sateesh, A. Raveendra, M. Ashok, S.S. Sivaraju, K. Umadevi, N. Rajeswaran","doi":"10.15251/cl.2023.2011.779","DOIUrl":"https://doi.org/10.15251/cl.2023.2011.779","url":null,"abstract":"In the present work, SnS thin films were prepared using the CBD technique at room temperature and varying annealing temperaturesfrom300 to 450 °C for photo detector applications. The prepared samples were characterized using different techniques for analyzing the structural, optical, morphological, and photo sensing properties of the samples. From XRD analysis, the diffraction pattern of all the prepared thin films shows the pristine SnS phase of the samples possessing an orthorhombic phase without the presence of any impurity phases. Among the fabricated thin films, the SnS thin film annealed at a temperature of 350 °C reveals the highest crystallite size. The Raman results showed the vibrational modes of SnS films and with the increase in growth temperature, the peaks are slightly shifted towards the lower wavelength region. Morphological results show that the SnS thin films exhibit a uniform morphology of 2-D petal-like morphology with different sizes. The UV-vis spectroscopic study shows the decrease in the bandgap value of the samples with the increase in annealing temperature. The photo sensing properties of the fabricated samples show the SnS sample annealed at 400 °C has a higherresponsivityvalueof6.40×10⁻²AW⁻¹,externalquantumefficiency(EQE)valueof14.9%, and the detectivity value of 6.05 × 10⁹ Jones. Finally, the transient photo response results suggest that the SnS annealed at 350 °C shows a rise and fall time of 1.5 and 2.5 s compared to the othersampleswhichwouldbebettersuitedforphotodetectorapplications. The electrical conductivity and photo-conductivity of the films increase by more than two orders with increase of film thickness from 170 nm to 915 nm. Hall Effect measurements confirm the p-type nature of the as-prepared SnS thin films.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"2010 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135614855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical optimization of tin sulphide based solar cell for different buffer layers using SCAPS 利用 SCAPS 对不同缓冲层的硫化锡基太阳能电池进行数值优化

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-11-01 DOI: 10.15251/cl.2023.2011.837

T. A. Chowdhury, S.M.T. Hossain, M.K. Anna, S.A. Ritu, S.F. Nuri

引用次数: 0

The effect of metal Ag nanoparticles on CdS/ZnTe heterojunction solar cells 金属银纳米颗粒对CdS/ZnTe异质结太阳能电池的影响

4区材料科学

Chalcogenide Letters Pub Date : 2023-10-01 DOI: 10.15251/cl.2023.209.677

S. H. Ibraheem, I. M. Abdulmajeed

引用次数: 0

Films of copper sulphide doped with nickel for optoelectronics: structural, optical, and magnetic characteristics 光电子学用掺杂镍的硫化铜薄膜:结构、光学和磁特性

4区材料科学

Chalcogenide Letters Pub Date : 2023-10-01 DOI: 10.15251/cl.2023.209.663

M. Ahmed, A. Alshahrie, E. R. Shaaban

{"title":"Films of copper sulphide doped with nickel for optoelectronics: structural, optical, and magnetic characteristics","authors":"M. Ahmed, A. Alshahrie, E. R. Shaaban","doi":"10.15251/cl.2023.209.663","DOIUrl":"https://doi.org/10.15251/cl.2023.209.663","url":null,"abstract":"Copper sulfide nanoparticles have a wide range of applications in various fields, and improving their physical properties is highly desirable. In this study, we investigate the influence of nickel concentrations on the structural, optical, and magnetic characteristics of CuS nanoparticles. The structural properties of Cu1-xNixS (x = 0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) were demonstrated using X-ray diffraction (XRD), which confirmed that all samples have a single hexagonal phase. The Energy Dispersive X-ray Technique (EDAX) was used to investigate the elemental analysis of Cu1-xNixS. The XPS study revealed the valence states of Cu, Ni, and S in the Cu0.94Ni0.06S nanoparticles, as well as surface oxidation. The optical characteristics were calculated based on the absorbance optical spectra of the films using a UV-vis-NIR double-beam spectrophotometer in the wavelength range of 400–1000 nm. The optical band gap for CuS and Ni-doped CuS samples decreases as the Ni concentration rises. Magnetic studies (using the M-H curve) demonstrate that 2% and 4% Ni-doped CuS nanoparticles exhibit strong ferromagnetism at ambient temperature and transition to a paramagnetic nature. These results suggest the potential of creating spintronic devices using Ni-doped CuS nanoparticles.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135459497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0