Cu掺杂对CdZnS薄膜性能的影响

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-11-01 DOI:10.15251/cl.2023.2011.789

K. A. Mohammed, R. A. Talib, B. Bhavani, N. H. J. Al Hasan, A. Kareem, F. H. Alsultany, R. S. Zabibah, M. A. Alkhafaji, S. Sharma

{"title":"Cu掺杂对CdZnS薄膜性能的影响","authors":"K. A. Mohammed, R. A. Talib, B. Bhavani, N. H. J. Al Hasan, A. Kareem, F. H. Alsultany, R. S. Zabibah, M. A. Alkhafaji, S. Sharma","doi":"10.15251/cl.2023.2011.789","DOIUrl":null,"url":null,"abstract":"CdZnS thin films created via chemical bath deposition were examined to see how Cu doping affected their characteristics. Cu ions were added to the films in order to change their optical, structural, and morphological characteristics. These findings suggest that Cu doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we were able to investigate the compositional ratio as well as the structural features of the films. The field emission scanning electron microscopy (FESEM) technique was utilized in order to investigate the surface morphology of the produced films. The morphology of prepared films was fiber-like and in nanoscale. In addition, the UV–vis spectroscopy technique was utilized in order to characterize the optical properties of thin films. The prepared Cu-CdZnS film was found to have direct band gap equal to 2.64 eV and indirect gap equal to 2.4 eV.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.2000,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The role of Cu doping in properties of CdZnS thin films\",\"authors\":\"K. A. Mohammed, R. A. Talib, B. Bhavani, N. H. J. Al Hasan, A. Kareem, F. H. Alsultany, R. S. Zabibah, M. A. Alkhafaji, S. Sharma\",\"doi\":\"10.15251/cl.2023.2011.789\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CdZnS thin films created via chemical bath deposition were examined to see how Cu doping affected their characteristics. Cu ions were added to the films in order to change their optical, structural, and morphological characteristics. These findings suggest that Cu doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we were able to investigate the compositional ratio as well as the structural features of the films. The field emission scanning electron microscopy (FESEM) technique was utilized in order to investigate the surface morphology of the produced films. The morphology of prepared films was fiber-like and in nanoscale. In addition, the UV–vis spectroscopy technique was utilized in order to characterize the optical properties of thin films. The prepared Cu-CdZnS film was found to have direct band gap equal to 2.64 eV and indirect gap equal to 2.4 eV.\",\"PeriodicalId\":9710,\"journal\":{\"name\":\"Chalcogenide Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.2000,\"publicationDate\":\"2023-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chalcogenide Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15251/cl.2023.2011.789\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chalcogenide Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15251/cl.2023.2011.789","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

通过化学浴沉积法制备了CdZnS薄膜，考察了Cu掺杂对薄膜特性的影响。在薄膜中加入Cu离子以改变其光学、结构和形态特征。这些发现表明，Cu掺杂可以用来修饰CdZnS薄膜的光学特性。利用x射线衍射仪(XRD)和x射线能谱仪(EDAX)分析了薄膜的组成比和结构特征。利用场发射扫描电子显微镜(FESEM)技术对所制备薄膜的表面形貌进行了研究。制备的薄膜具有纤维状和纳米级的形貌。此外，利用紫外可见光谱技术对薄膜的光学性质进行了表征。Cu-CdZnS薄膜的直接带隙为2.64 eV，间接带隙为2.4 eV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The role of Cu doping in properties of CdZnS thin films

CdZnS thin films created via chemical bath deposition were examined to see how Cu doping affected their characteristics. Cu ions were added to the films in order to change their optical, structural, and morphological characteristics. These findings suggest that Cu doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we were able to investigate the compositional ratio as well as the structural features of the films. The field emission scanning electron microscopy (FESEM) technique was utilized in order to investigate the surface morphology of the produced films. The morphology of prepared films was fiber-like and in nanoscale. In addition, the UV–vis spectroscopy technique was utilized in order to characterize the optical properties of thin films. The prepared Cu-CdZnS film was found to have direct band gap equal to 2.64 eV and indirect gap equal to 2.4 eV.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.