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Comparison of CdS nano films deposited by thermal evaporation and spray pyrolysis techniques 比较热蒸发和喷雾热解技术沉积的 CdS 纳米薄膜
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.161
A. N. Abouelkhir, E. R. Shaaban, M. Tag El-Dine, K. I. Hussain, I. S. Yahia
{"title":"Comparison of CdS nano films deposited by thermal evaporation and spray pyrolysis techniques","authors":"A. N. Abouelkhir, E. R. Shaaban, M. Tag El-Dine, K. I. Hussain, I. S. Yahia","doi":"10.15251/cl.2024.212.161","DOIUrl":"https://doi.org/10.15251/cl.2024.212.161","url":null,"abstract":"Cadmium sulfide was prepared by first turning it into a powder, which was then used to evaporate heat to create thin films. Additionally, the spray pyrolysis method was used to produce films of cadmium sulfide. A structural comparison using the crystallize size and lattice parameters. Furthermore for the prepared samples, an analysis of their optical characteristics was conducted through measurements of absorbance, transmission, and reflection, resulting in the determination of the energy gap.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139813455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and vibrational characteristics of Ge-S-Br glass system: ab initio calculation and Raman study Ge-S-Br 玻璃体系的结构和振动特性：ab initio 计算和拉曼研究
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.135
X. C. Han, K. Yu, J. Q. Bao, Y. L. Tong
{"title":"Structural and vibrational characteristics of Ge-S-Br glass system: ab initio calculation and Raman study","authors":"X. C. Han, K. Yu, J. Q. Bao, Y. L. Tong","doi":"10.15251/cl.2024.212.135","DOIUrl":"https://doi.org/10.15251/cl.2024.212.135","url":null,"abstract":"To improve the understanding of the structure network of chalcogenide glass, we report an investigation of the structure and vibrational property of the Ge-S-Br system chalcogenide glass. The structural origin was interpreted by the result of ab initio calculation performed on the basic units such as ethane-like(ETH) structure(Ge2S6 and Ge2Br6),edge-sharing(ES) structure Ge2S2SnBr4-n (n=0,1,2,3,4) and isolated GeSnBr4-n tetrahedron (n=0,1,2,3,4), which represent the local structure of Ge-S-Br glassy system. In addition, We have compared the experimental spectra of GeS2, GeS3Br, GeSBr2 glasses and liquid GeBr4 to the calculated main vibrational modes of basic units by ab initio calculation. The calculated vibrational modes of the GeSnBr4-n cluster are assigned by group theory. Moreover, the symmetrical stretching modes related to the Ge-S and Ge-Br bond are in accordance with the vibrational coupling theory. The variation of calculated main vibrational modes of GeSmBrn clusters reveals the structure formations of Ge-S-Br glassy system with different S/Br ratios, which can be in agreement with vibrational spectra of Ge-S-Br glass.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139829317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of CdS nano films deposited by thermal evaporation and spray pyrolysis techniques 比较热蒸发和喷雾热解技术沉积的 CdS 纳米薄膜
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.161
A. N. Abouelkhir, E. R. Shaaban, M. Tag El-Dine, K. I. Hussain, I. S. Yahia
{"title":"Comparison of CdS nano films deposited by thermal evaporation and spray pyrolysis techniques","authors":"A. N. Abouelkhir, E. R. Shaaban, M. Tag El-Dine, K. I. Hussain, I. S. Yahia","doi":"10.15251/cl.2024.212.161","DOIUrl":"https://doi.org/10.15251/cl.2024.212.161","url":null,"abstract":"Cadmium sulfide was prepared by first turning it into a powder, which was then used to evaporate heat to create thin films. Additionally, the spray pyrolysis method was used to produce films of cadmium sulfide. A structural comparison using the crystallize size and lattice parameters. Furthermore for the prepared samples, an analysis of their optical characteristics was conducted through measurements of absorbance, transmission, and reflection, resulting in the determination of the energy gap.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139873268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and vibrational characteristics of Ge-S-Br glass system: ab initio calculation and Raman study Ge-S-Br 玻璃体系的结构和振动特性：ab initio 计算和拉曼研究
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.135
X. C. Han, K. Yu, J. Q. Bao, Y. L. Tong
{"title":"Structural and vibrational characteristics of Ge-S-Br glass system: ab initio calculation and Raman study","authors":"X. C. Han, K. Yu, J. Q. Bao, Y. L. Tong","doi":"10.15251/cl.2024.212.135","DOIUrl":"https://doi.org/10.15251/cl.2024.212.135","url":null,"abstract":"To improve the understanding of the structure network of chalcogenide glass, we report an investigation of the structure and vibrational property of the Ge-S-Br system chalcogenide glass. The structural origin was interpreted by the result of ab initio calculation performed on the basic units such as ethane-like(ETH) structure(Ge2S6 and Ge2Br6),edge-sharing(ES) structure Ge2S2SnBr4-n (n=0,1,2,3,4) and isolated GeSnBr4-n tetrahedron (n=0,1,2,3,4), which represent the local structure of Ge-S-Br glassy system. In addition, We have compared the experimental spectra of GeS2, GeS3Br, GeSBr2 glasses and liquid GeBr4 to the calculated main vibrational modes of basic units by ab initio calculation. The calculated vibrational modes of the GeSnBr4-n cluster are assigned by group theory. Moreover, the symmetrical stretching modes related to the Ge-S and Ge-Br bond are in accordance with the vibrational coupling theory. The variation of calculated main vibrational modes of GeSmBrn clusters reveals the structure formations of Ge-S-Br glassy system with different S/Br ratios, which can be in agreement with vibrational spectra of Ge-S-Br glass.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139889284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative study by simulation betweentwo structures CdS/CZTS and ZnS/CZTS via SCAPS-1D software 通过 SCAPS-1D 软件对 CdS/CZTS 和 ZnS/CZTS 两种结构进行模拟比较研究
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.113
C. Merzouk, S. Bensmaine, L. Ghalmi, A. Aissat
{"title":"Comparative study by simulation betweentwo structures CdS/CZTS and ZnS/CZTS via SCAPS-1D software","authors":"C. Merzouk, S. Bensmaine, L. Ghalmi, A. Aissat","doi":"10.15251/cl.2024.212.113","DOIUrl":"https://doi.org/10.15251/cl.2024.212.113","url":null,"abstract":"This comparative numerical simulation study investigates the electrical characteristics of two heterojunction thin-film solar cells based on Kësterites Copper Zinc Tin Sulfide. The study compared two solar cells with different structures, Zinc Oxide ZnO/Cadmium Sulfide CdS/Kësterites CZTS/Molybdenum Mo and Zinc Oxide ZnO/Zinc Sulfide ZnS/Kësterites CZTS/Molybdenum Mo, to determine which is more efficient in achieving maximum photovoltaic efficiency. The results showed that the ZnO/ZnS/CZTS/Mo solar cell is the better option, outperforming the CdS/CZTS/Mo solar cell in terms of short-circuit current density Jsc, open-circuit voltage Voc, form factor FF, and photovoltaic efficiency η. The study also investigated the effect of doping and layer thickness of CZTS and ZnS on photovoltaic parameters. The optimized ZnS/CZTS solar cell achieved an efficiency of 16.29% for ZnS and CZTS layer thicknesses of 0.02µm and 4μm, respectively, and doping concentrations of 1018 and 1016cm-3 , respectively. Overall, this study provides valuable insights for designing more efficient solar cells and optimizing their photovoltaic efficiency using Kësterites CZTS, CdS, and ZnS materials.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139826995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical and electrical properties of Ni+2 doped nanocrystalline Bi2S3 thin films prepared by chemical bath deposition method 化学沉积法制备的掺杂 Ni+2 纳米晶 Bi2S3 薄膜的光学和电学特性
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.151
M. A. Hussain, P. J. Saikia, S. R. Devi, L. R. Singh
{"title":"Optical and electrical properties of Ni+2 doped nanocrystalline Bi2S3 thin films prepared by chemical bath deposition method","authors":"M. A. Hussain, P. J. Saikia, S. R. Devi, L. R. Singh","doi":"10.15251/cl.2024.212.151","DOIUrl":"https://doi.org/10.15251/cl.2024.212.151","url":null,"abstract":"Nickel (Ni+2) doped nanocrystalline Bi2S3 thin films are deposited on the glass substrate from the solutions containing Bismuth Nitrate, Ethylenediamine Tetraacetic acid (EDTA) and Thioacetamide at a bath deposition temperature of 318K. The optical, surface morphological and electrical properties of Ni-doped Bi2S3 thin films prepared at three different doping concentration are investigate by using ultraviolet–visible transmission spectra (UV–Vis), Scanning electron microscopy (SEM), Energy Dispersive X-ray (EDAX) and thermo-e.m.f. techniques. The optical band gap energies are found in between 2.32-2.43 eV. The SEM images show that the prepared films are continuous, dense and distributed over the entire area with good uniformity. The electrical conductivity of the films are in the order of 10-2 Ω-1 m-1 . The films are n-type as determined from the Hot Probe method. Photoconductivity studies reveal that photocurrent increases with the increase in Ni doping concentrations. Due to the absorption of photons, free electron-hole pairs (EHP) are produce.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139827581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics 退火对光伏用硒化锡薄膜光电特性的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.125
M. Jabeen, N. Ali, Z. Ali, H. Ali, A. A. A. Bahajjaj, B. Haq, S.H. Kim
{"title":"The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics","authors":"M. Jabeen, N. Ali, Z. Ali, H. Ali, A. A. A. Bahajjaj, B. Haq, S.H. Kim","doi":"10.15251/cl.2024.212.125","DOIUrl":"https://doi.org/10.15251/cl.2024.212.125","url":null,"abstract":"In this study, Tin selenide (SnSe) was prepared via thermal evaporation from tin ingots and selenium powder followed by annealing at 250°C in an inert atmosphere of Argon gas. Two samples were used for characterization purposes, as-deposited and annealed. The structural parameters including particle size, strain, dislocation density, and number of crystallites per unit area were calculated from XRD while the optical properties including band gap were extracted from UV-visible spectroscopy. Four probe techniques were used to measure the electrical properties.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139886206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics 退火对光伏用硒化锡薄膜光电特性的影响
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.125
M. Jabeen, N. Ali, Z. Ali, H. Ali, A. A. A. Bahajjaj, B. Haq, S.H. Kim
{"title":"The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics","authors":"M. Jabeen, N. Ali, Z. Ali, H. Ali, A. A. A. Bahajjaj, B. Haq, S.H. Kim","doi":"10.15251/cl.2024.212.125","DOIUrl":"https://doi.org/10.15251/cl.2024.212.125","url":null,"abstract":"In this study, Tin selenide (SnSe) was prepared via thermal evaporation from tin ingots and selenium powder followed by annealing at 250°C in an inert atmosphere of Argon gas. Two samples were used for characterization purposes, as-deposited and annealed. The structural parameters including particle size, strain, dislocation density, and number of crystallites per unit area were calculated from XRD while the optical properties including band gap were extracted from UV-visible spectroscopy. Four probe techniques were used to measure the electrical properties.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139826535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical and electrical properties of Ni+2 doped nanocrystalline Bi2S3 thin films prepared by chemical bath deposition method 化学沉积法制备的掺杂 Ni+2 纳米晶 Bi2S3 薄膜的光学和电学特性
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.151
M. A. Hussain, P. J. Saikia, S. R. Devi, L. R. Singh
{"title":"Optical and electrical properties of Ni+2 doped nanocrystalline Bi2S3 thin films prepared by chemical bath deposition method","authors":"M. A. Hussain, P. J. Saikia, S. R. Devi, L. R. Singh","doi":"10.15251/cl.2024.212.151","DOIUrl":"https://doi.org/10.15251/cl.2024.212.151","url":null,"abstract":"Nickel (Ni+2) doped nanocrystalline Bi2S3 thin films are deposited on the glass substrate from the solutions containing Bismuth Nitrate, Ethylenediamine Tetraacetic acid (EDTA) and Thioacetamide at a bath deposition temperature of 318K. The optical, surface morphological and electrical properties of Ni-doped Bi2S3 thin films prepared at three different doping concentration are investigate by using ultraviolet–visible transmission spectra (UV–Vis), Scanning electron microscopy (SEM), Energy Dispersive X-ray (EDAX) and thermo-e.m.f. techniques. The optical band gap energies are found in between 2.32-2.43 eV. The SEM images show that the prepared films are continuous, dense and distributed over the entire area with good uniformity. The electrical conductivity of the films are in the order of 10-2 Ω-1 m-1 . The films are n-type as determined from the Hot Probe method. Photoconductivity studies reveal that photocurrent increases with the increase in Ni doping concentrations. Due to the absorption of photons, free electron-hole pairs (EHP) are produce.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139887098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative study by simulation betweentwo structures CdS/CZTS and ZnS/CZTS via SCAPS-1D software 通过 SCAPS-1D 软件对 CdS/CZTS 和 ZnS/CZTS 两种结构进行模拟比较研究
IF 1 4区 材料科学
Chalcogenide Letters Pub Date : 2024-02-01 DOI: 10.15251/cl.2024.212.113
C. Merzouk, S. Bensmaine, L. Ghalmi, A. Aissat
{"title":"Comparative study by simulation betweentwo structures CdS/CZTS and ZnS/CZTS via SCAPS-1D software","authors":"C. Merzouk, S. Bensmaine, L. Ghalmi, A. Aissat","doi":"10.15251/cl.2024.212.113","DOIUrl":"https://doi.org/10.15251/cl.2024.212.113","url":null,"abstract":"This comparative numerical simulation study investigates the electrical characteristics of two heterojunction thin-film solar cells based on Kësterites Copper Zinc Tin Sulfide. The study compared two solar cells with different structures, Zinc Oxide ZnO/Cadmium Sulfide CdS/Kësterites CZTS/Molybdenum Mo and Zinc Oxide ZnO/Zinc Sulfide ZnS/Kësterites CZTS/Molybdenum Mo, to determine which is more efficient in achieving maximum photovoltaic efficiency. The results showed that the ZnO/ZnS/CZTS/Mo solar cell is the better option, outperforming the CdS/CZTS/Mo solar cell in terms of short-circuit current density Jsc, open-circuit voltage Voc, form factor FF, and photovoltaic efficiency η. The study also investigated the effect of doping and layer thickness of CZTS and ZnS on photovoltaic parameters. The optimized ZnS/CZTS solar cell achieved an efficiency of 16.29% for ZnS and CZTS layer thicknesses of 0.02µm and 4μm, respectively, and doping concentrations of 1018 and 1016cm-3 , respectively. Overall, this study provides valuable insights for designing more efficient solar cells and optimizing their photovoltaic efficiency using Kësterites CZTS, CdS, and ZnS materials.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139886919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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