Chalcogenide Letters最新文献_第3页

Enhancing tribological properties of MoSe2/SnSe2/SnSe@C through 2D nanosheets modification of 3D structures 通过二维纳米片修饰三维结构增强MoSe2/SnSe2/SnSe@C的摩擦学性能

4区材料科学

Chalcogenide Letters Pub Date : 2023-10-01 DOI: 10.15251/cl.2023.209.685

C. T. Zhu, F. Chen, W. Yan, Y. C. Wei, J. Xu, Y. P. Chen

{"title":"Enhancing tribological properties of MoSe2/SnSe2/SnSe@C through 2D nanosheets modification of 3D structures","authors":"C. T. Zhu, F. Chen, W. Yan, Y. C. Wei, J. Xu, Y. P. Chen","doi":"10.15251/cl.2023.209.685","DOIUrl":"https://doi.org/10.15251/cl.2023.209.685","url":null,"abstract":"This paper has prepared a new type of MoSe2/SnSe2/SnSe@C heterostructure nanocomposites by one-step hydrothermal method and systematically studied by XRD, SEM, and XPS. Furthermore, the tribological behavior of MoSe2/SnSe2/SnSe and MoSe2/SnSe2/SnSe@C heterojunction in pure oil was extensively examined in a ball-on-disk tribometer. The effects of applied load and rotational speed were also investigated. Compared with MoSe2/SnSe2/SnSe nanocomposites, MoSe2/SnSe2/SnSe@C achieved better friction properties. Especially, when the mass ratio of MoSe2/SnSe2/SnSe@C in the base oil is 1.5 wt%, the friction coefficient reaches the minimum value of 0.1. The results show that the introduction of carbon material can significantly improve the wear reduction and anti-wear properties of the matrix in lubricating oil. Additionally, the construction and excellent tribological properties of MoSe2/SnSe2/SnSe@C heterojunction would be beneficial for the design of novel nano-additives with 2D/3D structure for enhancing friction reduction and anti-wear, which also would expand their actual applications in the industry and agriculture.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135456924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of chemical bath deposited CdSSe thin films 化学浴沉积CdSSe薄膜的优化

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.209.657

M. A. Jafarov, E. F. Nasirov, V. Mammadov, S. A. Jahangirova

引用次数: 0

Calculation of the localized and extended energy states density for Ge60Se40-xTex alloy prepared by melting point method 熔点法制备Ge60Se40-xTex合金的局域和扩展能态密度计算

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.209.649

J. H. Azzawi, B. A. Ahmed, K. A. Jasim, E. M. T. Salman

{"title":"Calculation of the localized and extended energy states density for Ge60Se40-xTex alloy prepared by melting point method","authors":"J. H. Azzawi, B. A. Ahmed, K. A. Jasim, E. M. T. Salman","doi":"10.15251/cl.2023.209.649","DOIUrl":"https://doi.org/10.15251/cl.2023.209.649","url":null,"abstract":"The DC electrical conductivity properties of Ge60Se40-xTex alloy with x = 0, 5, 10, 15 and 20). The samples were formed in the form of discs with the thickness of 0.25–0.30 cm and the diameter of 1.5 cm. Samples were pressed under a pressure of 6 tons per cm2 , using a ton hydraulic press. They were prepared after being pressed using a ton hydraulic press using a hydraulic press. Melting point technology use to preper the samples. Continuous electrical conductivity properties were recorded from room temperature to 475 K. Experimental data indicates that glass containing 15% Te has the highest electrical conductivity allowing maximum current through the sample compared to Lu with other samples. Therefore, it is found that the DC conductivity increases with increasing Te concentration. The electrical conductivity properties show non-ohmic behavior due to the effects of temperature on the crystal structure of the samples, which indicates that the samples remain semi-conductive after partial replacement. Three conduction mechanisms are also observed for each sample at high, medium, and low temperatures. The Fermi level local and extended state densities and conductance parameters were calculated, and all were found to change with the change of Te concentration.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136375024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural, electronic, elastic, and optical properties of chalcogenide perovskite SrZrS3 under ambient and high-pressure conditions 硫系钙钛矿SrZrS3在环境和高压条件下的结构、电子、弹性和光学性质

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.208.619

M. L. Han, Y. Hu

引用次数: 0

Rational design of MoS2 nanosheet/ MoS2 nanowire homostructures and their enhanced hydrogen evolution reaction 二硫化钼纳米片/二硫化钼纳米线的合理设计及其增强析氢反应

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.209.639

L. Yang, X. Q. Yuan, R. Y. Liu, R. X. Song, Q. W. Wang, W. Liang

引用次数: 0

First-principle investigations of structural and optical properties of CdSe CdSe结构和光学性质的第一性原理研究

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.208.609

Y. Benkrima, D. Belfennache, R. Yekhlef, A. M. Ghaleb

{"title":"First-principle investigations of structural and optical properties of CdSe","authors":"Y. Benkrima, D. Belfennache, R. Yekhlef, A. M. Ghaleb","doi":"10.15251/cl.2023.208.609","DOIUrl":"https://doi.org/10.15251/cl.2023.208.609","url":null,"abstract":"Our calculations have been done using the density functional theory (DFT). In fact, we were able to find the optical and structural properties of CdSe compound of cubic phase by using the previously mentioned theory. The pseudo-potential linearised augmented plane wave (PP-LAPW) method is applied to solve the Kuhn-Sham equations. The results are obtained using Generalized Gradient Approximation according to the scheme described by Perdew-Burke-Ernzerhof (GGA-PBE) as a types of exchange-correlation. Convergence of energy and charge has been verified, this is for the study of properties basic state of the compound. It was found that the calculated initial cell constants at equilibrium are very close to previous theoretical and experimental works. The electronic properties of the energy band structure and the total density of states confirmed that the CdSe compound has a direct energy gap estimated at 1.52 eV, which is very close to the previous applied results. The general results of the calculated optical properties including the imaginary part of the dielectric constant, absorption coefficient, reflectivity, optical conductance, refractive index, and extinction coefficient of cubic phase CdSe under the imposed conditions are discussed and compared with previous works. Through our results, new and important optical properties of the compound were highlighted, and then determine the areas of its use in the appropriate technological industries.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136377810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells 厚度和掺杂浓度对GaN/p-Si基太阳能电池太阳能效率的影响

4区材料科学

Chalcogenide Letters Pub Date : 2023-09-20 DOI: 10.15251/cl.2023.209.629

N. S. Khairuddin, M. Z. Mohd Yusoff, H. Hussin

引用次数: 0

Characterization of new hybrid composites of PVA-Fe2O3-CdZnS 新型PVA-Fe2O3-CdZnS杂化复合材料的表征

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-08-01 DOI: 10.15251/cl.2023.208.599

K. A. Mohammed, N. A. Al Hasan, L. R. N. H. J., D. S. Abdul-Zahra, Y. D. Dwivedi, K. H. Salem, M. K. Agarwal, R. Zabibah, M. A. Alkhafaji

引用次数: 0

Annealing effect on the photocurrent response of SnS thin films prepared by the chemical spray pyrolysis method 退火对化学喷雾热解法制备SnS薄膜光电流响应的影响

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-08-01 DOI: 10.15251/cl.2023.208.549

D. Dekhil, H. Guessas, A. Nouri, S. Ullah

{"title":"Annealing effect on the photocurrent response of SnS thin films prepared by the chemical spray pyrolysis method","authors":"D. Dekhil, H. Guessas, A. Nouri, S. Ullah","doi":"10.15251/cl.2023.208.549","DOIUrl":"https://doi.org/10.15251/cl.2023.208.549","url":null,"abstract":"SnS thin films were synthesized using the spray pyrolysis method and then annealed at 350, 400, and 450°C. According to the crystallographic analysis, the obtained SnS thin films crystallized in the polycrystalline orthorhombic system. The grains measured 47, 66, and 37 nm for the samples annealed at 350, 400, and 450°C, respectively. SEM and AFM images indicate that the samples’ surfaces were completely covered. Thus, the grains of SnS nanostructures have a granular-like shape and vary in size depending on the annealing temperatures. The transmittance measurement shows that annealing the sample at 400 °C extends and improves its absorption range to 600 nm. The resulting band gap energies were 1.60 eV, 1.30 eV, and 2.55 eV for annealing at 350 °C, 400 °C, and 450 °C, respectively. Hall Effect measurements reveal that annealing SnS films at 400 °C enhances their electrical properties. The values of carrier mobility, conductivity, and carrier concentration are 1.678 ×105 Cm2/Vs, 9.756 ×10-5 Ω-1 cm-1 , and 3.168 ×1010Cm-3 , respectively. Additionally, the photocurrent response validates that all samples annealed at 350, 400, and 450 °C have p-type conductivity, with values of 13, 28, and 2.5 µA/Cm2, respectively. The best conductivity, carrier mobility, and photocurrent values are obtained by annealing at 400 °C. Therefore, SnS thin films can be an interesting choice for absorber layer applications in photovoltaic systems.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47023421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles calculation of electronic structure, chemical bonding and optical properties of β-AgBiS2 β-AgBiS2的电子结构、化学键和光学性质的第一性原理计算

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-08-01 DOI: 10.15251/cl.2023.208.579

Y. Zhang, J. Guo, Y. Zhang, Q. Y. Y. W., S. R. Zhang, Q. Lai

引用次数: 0