2D-MoS2薄膜的结构与器件制备

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2023-08-01 DOI:10.15251/cl.2023.208.573

R. Singh, S. Kimothi, M. Singh, U. Rani, A. Verma

{"title":"2D-MoS2薄膜的结构与器件制备","authors":"R. Singh, S. Kimothi, M. Singh, U. Rani, A. Verma","doi":"10.15251/cl.2023.208.573","DOIUrl":null,"url":null,"abstract":"In this research paper, we have prepared thin film of MoS2 by thermal evaporation technique and characterized it. This thin film depositions lead to amorphous thin film. To make it crystalline, thermal annealing of the film have deposited on the substrates at 800 o C for two hour under vacuum environment. X-ray diffraction data of thin film shows the poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film shows the crystallinity with regularly arranged grains. Furthermore, an unconventional MoS2 based FET device has been fabricated by depositing thin film of MoS2 on p-type silicon. Thereafter, its transfer and output characteristics have been studied. The results show n-type semiconductor behaviour with an on/off ratio of about 103 and field-effect mobility of ~0.015 cm2/V. s at VDS of 1 V.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.2000,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and device fabrication of 2D-MoS2 thin film\",\"authors\":\"R. Singh, S. Kimothi, M. Singh, U. Rani, A. Verma\",\"doi\":\"10.15251/cl.2023.208.573\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this research paper, we have prepared thin film of MoS2 by thermal evaporation technique and characterized it. This thin film depositions lead to amorphous thin film. To make it crystalline, thermal annealing of the film have deposited on the substrates at 800 o C for two hour under vacuum environment. X-ray diffraction data of thin film shows the poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film shows the crystallinity with regularly arranged grains. Furthermore, an unconventional MoS2 based FET device has been fabricated by depositing thin film of MoS2 on p-type silicon. Thereafter, its transfer and output characteristics have been studied. The results show n-type semiconductor behaviour with an on/off ratio of about 103 and field-effect mobility of ~0.015 cm2/V. s at VDS of 1 V.\",\"PeriodicalId\":9710,\"journal\":{\"name\":\"Chalcogenide Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.2000,\"publicationDate\":\"2023-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chalcogenide Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/cl.2023.208.573\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chalcogenide Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/cl.2023.208.573","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

本文采用热蒸发法制备了二硫化钼薄膜，并对其进行了表征。这种薄膜沉积形成非晶薄膜。为了使薄膜结晶，在真空环境下，在800℃的温度下，对薄膜进行了2小时的热退火。薄膜的x射线衍射数据显示了其多晶性。薄膜的原子力显微镜(AFM)图像显示了晶粒有序排列的结晶度。此外，通过在p型硅上沉积MoS2薄膜，制备了一种非传统的MoS2基FET器件。在此基础上，对其传递特性和输出特性进行了研究。结果表明，n型半导体的开/关比约为103，场效应迁移率为~0.015 cm2/V。在VDS为1v时。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Structural and device fabrication of 2D-MoS2 thin film

In this research paper, we have prepared thin film of MoS2 by thermal evaporation technique and characterized it. This thin film depositions lead to amorphous thin film. To make it crystalline, thermal annealing of the film have deposited on the substrates at 800 o C for two hour under vacuum environment. X-ray diffraction data of thin film shows the poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film shows the crystallinity with regularly arranged grains. Furthermore, an unconventional MoS2 based FET device has been fabricated by depositing thin film of MoS2 on p-type silicon. Thereafter, its transfer and output characteristics have been studied. The results show n-type semiconductor behaviour with an on/off ratio of about 103 and field-effect mobility of ~0.015 cm2/V. s at VDS of 1 V.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.