Chalcogenide Letters最新文献_第4页

Structural and device fabrication of 2D-MoS2 thin film 2D-MoS2薄膜的结构与器件制备

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-08-01 DOI: 10.15251/cl.2023.208.573

R. Singh, S. Kimothi, M. Singh, U. Rani, A. Verma

引用次数: 0

Photoluminescence properties of Ba0.7Sr0.3TiO3:Sm3+ modified K0.5Na0.5NbO3 perovskite oxide ceramics Ba0.7Sr0.3TiO3:Sm3+改性K0.5Na0.5NbO3钙钛矿氧化物陶瓷的光致发光性能

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-08-01 DOI: 10.15251/cl.2023.208.563

K. Sun, Z. Liu, R. X. Wang, X. Ling, J. W. Sun

引用次数: 0

Systematic investigation of magneto-electronic, structural, thermoelectric and optical properties of Nd2MgX4 (X = S, Se) compounds Nd2MgX4 (X = S, Se)化合物的磁电子、结构、热电和光学性质的系统研究

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-08-01 DOI: 10.15251/cl.2023.208.559

M. Fida, S. Aldaghfag, M. Yaseen, M. Ishfaq

{"title":"Systematic investigation of magneto-electronic, structural, thermoelectric and optical properties of Nd2MgX4 (X = S, Se) compounds","authors":"M. Fida, S. Aldaghfag, M. Yaseen, M. Ishfaq","doi":"10.15251/cl.2023.208.559","DOIUrl":"https://doi.org/10.15251/cl.2023.208.559","url":null,"abstract":"The structural, magnetic, optoelectronic, and thermoelectric (TE) characteristics of Nd2MgX4 (X = S, Se) are determined by utilizing the density functional theory (DFT) based full potential linearized augmented plane wave (FP-LAPW) method as employed in WEIN2k code. The exchange and correlation energies along with Coulomb interactions are brought into consideration by employing local density of approximation with Hubbard model (LDA+U). Tolerance (τ) factor and formation enthalpy were utilized to confirm the stability of both spinels. τ values are 0.70 and 0.68, and formation enthalpy values are (ΔHf) are -3.34 eV and -2.19 eV for Nd2MgX4 (X = S, Se), respectively. For Nd2MgX4 (X = S, Se) metallic behavior is found in spin up case while considerable bandgaps are found in spin down with half metallic bandgap (Eg) values of 1.82 and 1.26 eV (in spin down), correspondingly. The calculated magnetic moment for Nd2MgX4 (X = S, Se) are 12.0008 μB and 12.0003 μB, respectively. Furthermore, optical features including refractive index n(ω), dielectric constant 𝜀𝜀(𝜔𝜔), reflectivity R(ω), optical conductivity σ(ω), absorption coefficient α(ω) and extinction coefficient k(ω) are computed. The maximum calculated real part of dielectric constant 𝜀𝜀1(𝜔𝜔) values for Nd2MgX4 (X = S, Se) are 9.2 and 10.8, respectively. For Nd2MgX4 (X = S, Se), σ(ω) has maximum value of 7642.9 at 6.6 and 7592.5 (Ω cm)-1 at 5.99 eV, respectively. The various temperature dependent thermoelectric (TE) parameters along with figure of merit (ZT) are determined to get full insight into the TE behavior for both compounds by using BoltzTraP code. The computed ZT value for Nd2MgSe4 is 0.81 at 800 K while Nd2MgS4 has ZT value of 0.80 at 800 K. Results showed that both spinels have potential in spintronics and in cooling industries.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43253330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of substrate temperature on physical properties of Co doped SnS2 thin films deposited by ultrasonic spray pyrolysis 衬底温度对超声喷雾热解制备Co掺杂SnS2薄膜物理性能的影响

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-08-01 DOI: 10.15251/cl.2023.208.587

Z. Hadef, K. Kamli, O. Kamli, S. Labiod

引用次数: 0

Composition dependence of heat capacity in Se75Te15-XCd10InX(x=0, 5,10 and 15) chalcogenide glasses Se75Te15-XCd10InX(x=0、5、10和15)硫系玻璃热容的组分依赖性

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-07-05 DOI: 10.15251/cl.2023.206.393

S. Kumar, P. Kumar, S. Sahni, S. Singh, K. Singh

引用次数: 0

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation 真空蒸发法制备CdTe/Si太阳能电池器件的物理性能优化

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-07-05 DOI: 10.15251/cl.2023.206.431

H. M. Ali, M. H. Mustafa

{"title":"Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation","authors":"H. M. Ali, M. H. Mustafa","doi":"10.15251/cl.2023.206.431","DOIUrl":"https://doi.org/10.15251/cl.2023.206.431","url":null,"abstract":"We investigated at the optical properties, structural makeup, and morphology of thin films of cadmium telluride (CdTe) with a thickness of 150 nm produced by thermal evaporation over glass. The X-ray diffraction study showed that the films had a crystalline composition, a cubic structure, and a preference for grain formation along the (111) crystallographic direction. The outcomes of the inquiry were used to determine these traits. With the use of thin films of CdTe that were doped with Ag at a concentration of 0.5%, the crystallization orientations of pure CdTe (23.58, 39.02, and 46.22) and CdTe:Ag were both determined by X-ray diffraction. orientations (23.72, 39.21, 46.40) For samples that were pure and those that were doped with silver, the optical band gap shrank by (1.52-1.47) eV (400–1100)nm resulting in a drop in the absorption coefficient. An incident power density of (100 mW/cm2) was used to examine the I-V properties of heterojunctions created by light on a variety of clean and doped materials. In accordance with the X-ray diffraction analysis, the films had a cubic structure and dominated grain growth along the (111) crystallographic direction.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44134536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Examining the impact of quantum confinement energy on the optical characteristics of zinc sulfide and gallium nitrate in the ultraviolet spectral range 在紫外光谱范围内研究量子约束能对硫化锌和硝酸镓光学特性的影响

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-07-05 DOI: 10.15251/cl.2023.206.423

A. Kafel, S. N. Turki Al-Rashid

引用次数: 0

Tensile deformation of S adsorbed in a monolayer of ReS2 affects its electronic structure and optical properties 吸附在ReS2单层中的S的拉伸变形影响其电子结构和光学性质

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-07-05 DOI: 10.15251/cl.2023.206.409

G. Jiao, G. L. Liu, L. Wei, J. Zhao, G. Zhang

引用次数: 0

The effect of the concentration of tin (Sn) in the metallic precursor, on the structure, morphology, optical and electrical properties of electrochemically deposited lead-tin-sulphide (PbSnS) thin films 金属前驱体中锡（Sn）浓度对电化学沉积硫化铅锡（PbSnS）薄膜结构、形态、光学和电学性能的影响

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-07-05 DOI: 10.15251/cl.2023.206.399

I. Nkrumah, F. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye

{"title":"The effect of the concentration of tin (Sn) in the metallic precursor, on the structure, morphology, optical and electrical properties of electrochemically deposited lead-tin-sulphide (PbSnS) thin films","authors":"I. Nkrumah, F. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye","doi":"10.15251/cl.2023.206.399","DOIUrl":"https://doi.org/10.15251/cl.2023.206.399","url":null,"abstract":"A study has been carried out to investigate the effect of the concentration of Sn in the metallic precursor on the structure, morphology, optical and electrical properties of PbSnS thin films. The films were directly electrodeposited on ITO-coated glass substrates using a 3-electrode electrochemical cell having graphite as the counter electrode and Ag/AgCl as the reference electrode. Several depositions were carried out, with each deposited film having a different concentration of Sn in the metallic precursor whilst all other parameters were kept constant for all the films. Post deposition annealing was carried out in air at 250 o C for an hour. A variety of techniques were used to characterize the films. Results showed that the increase in Sn concentration did not modify the structure and preferred orientation of the films. However, it caused a slight increase in the average grain size of the films and electrical conductivity. All the films showed direct transition with the optical band gap reducing with increasing Sn concentration. The refractive index of the films showed anomalous dispersion behaviour within the UV region, and normal dispersion in the visible and infrared regions, whilst following an increasing trend with the grain size. SEM image showed spherically shaped grains of different sizes distributed randomly with good coverage across the entire area of the substrate. The EDAX spectrum was consistent with formation of the ternary PbSnS compound on ITO-coated glass substrate. Overall results indicate that, the optical and electrical properties of the electrochemically deposited PbSnS thin films can be tuned to make them suitable for specific applications by varying the concentration of Sn in the metallic precursor.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45758283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Upconversion red light emission and luminescence thermometry of Gd2O3:Er3+ @Gd2O3:Yb3+ core-shell nanofibers synthesized via electrospinning 静电纺丝合成Gd2O3:Er3+@Gd2O3:Yb3+核壳纳米纤维的上转换红光发射和发光测温

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2023-07-05 DOI: 10.15251/cl.2023.207.439

Z. Liu, R. X. Wang, K. Sun, X. Ling, J. W. Sun, D. Chen

引用次数: 0