Chalcogenide Letters最新文献_第4页

Effect of annealing temperature on the structural and optical properties of vacuum evaporated Cu13Se52Bi35 thin films 退火温度对真空蒸发 Cu13Se52Bi35 薄膜结构和光学特性的影响

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2024-01-31 DOI: 10.15251/cl.2024.211.99

A. Alwany, A. Alnakhlani, B. Hassan, M. Algradee, R. A. Fouad, A. A. Alfaqeer

引用次数: 0

Performance of high sensitive heterojunction CuS/porous silicon photodetector 高灵敏度异质结 CuS/多孔硅光电探测器的性能

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2024-01-01 DOI: 10.15251/cl.2024.211.81

A. A. Ahmed, G. G. Ali, N. A. Daham

{"title":"Performance of high sensitive heterojunction CuS/porous silicon photodetector","authors":"A. A. Ahmed, G. G. Ali, N. A. Daham","doi":"10.15251/cl.2024.211.81","DOIUrl":"https://doi.org/10.15251/cl.2024.211.81","url":null,"abstract":"In this work, copper sulfide (CuS) nanostructure was deposited on a porous silicon wafer for the visible light by spray pyrolysis method. Through this, a series of devices were suggested as a part of the deposit concentration of CuS on n-type porous silicon. Simultaneously, the physical features of the attained film were illustrated. FESEM exhibited that the average nanoparticle diameter increased with the concentration of CuS at orientation (100) and was found to be 47.84 nm, 56.36nm and 71.32nm, while the average diameter at (111) orientation was found to be 37.64 nm, 41.46nm, 55.22 nm of 0.1, 0.3 and 0.5M respectively. In addition to the atomic force microscope (AFM) showed the roughness and uniformity of the CuS/PSi fabricated decreased with increasing concentration of CuS, In detail, the attained photo-responsivity and specific detectivity were observed to be 210 mW/A, 340 mW/A and 3×1010 Jones, 4.2×1010 Jones at orientation (100 )using concentration of 0.1M and 0.5M respectively . On the other hand, the photo-responsivity and specific detectivity were observed to be 260 mW/A, 380 mW/A and 1.8 ×1010 Jones, 4.5×1010 Jones at orientation (111) using concentrations of 0.1M and 0.5M respectively. The presented work shows a substitutional system for an economical and environmentally friendly optoelectronic scheme. The photo-responsive considered to be in a positive linear relationship with the used concentration.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139634120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical study on the elastic and thermodynamic properties of CdS 关于 CdS 弹性和热力学性质的理论研究

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2024-01-01 DOI: 10.15251/cl.2024.211.39

G. Hao, H. Hou, S. R. Zhang, L. Xie

引用次数: 0

DFT insights on the Be1-xCrxS alloys for optoelectronic and magnetic devices 关于用于光电和磁性器件的 Be1-xCrxS 合金的 DFT 见解

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2024-01-01 DOI: 10.15251/cl.2024.211.53

N. Kanwal, M. Ishfaq, S. Aldaghfag, S. Saleem, M. Yaseen

{"title":"DFT insights on the Be1-xCrxS alloys for optoelectronic and magnetic devices","authors":"N. Kanwal, M. Ishfaq, S. Aldaghfag, S. Saleem, M. Yaseen","doi":"10.15251/cl.2024.211.53","DOIUrl":"https://doi.org/10.15251/cl.2024.211.53","url":null,"abstract":"In this work, the electro-optical and magnetic characteristics of Be1-xCrxS (x= 6.25%, 12.5% and 25%) are brought into investigation by employing full potential linearized augmented plane wave (FP-LAPW) scheme designed within density functional theory (DFT). The stability of the Be1-xCrxS alloy is justified by the negative values of formation energy. The band structures and density of states are examined by using GGA functional. Be1-xCrxS compound demonstrates the half-metallic (HM) ferromagnetic behavior for all doping concentrations; spin-up channel reveals the metallic character and other spin version displays the semiconductor (SC) behavior. The values of total magnetic moment (µB) are recorded as 4.0 8.0 and 16.0 µB for corresponding 6.25%, 12.5% and 25%, which mainly arises owing to Cr-3d state. Moreover, optical features including dielectric function ε(ꞷ), reflectivity, refraction, and absorption are explored within range of 0-10 eV. The maximum absorption of incident photons was found in ultraviolet (UV) span which implies their importance for optoelectronic applications. Results reveal that the studied alloy has potential applications in magnetic and optoelectronic gadgets.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139631261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Kinetics of thermally induced processes in Ag doped As40Se30Te30 chalcogenide glass 掺银 As40Se30Te30 卤化物玻璃中的热诱导过程动力学

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2024-01-01 DOI: 10.15251/cl.2024.211.21

R. Vigi, G. Štrbac, D. Štrbac, O. Bošák, M. Kubliha

引用次数: 0

Er3+-doped SiO2-TeO2-ZnO-Na2O thin film fabricated by ultrafast laser plasma doping under different ambient atmospheres 在不同环境气氛下通过超快激光等离子体掺杂制备掺杂 Er3+ 的 SiO2-TeO2-ZnO-Na2O 薄膜

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2024-01-01 DOI: 10.15251/cl.2024.211.11

S. A. Kamil, G. Jose

引用次数: 0

Thermodynamic properties of chalcogenide and pnictide ternary tetrahedral semiconductors 瑀和锑三元四面体半导体的热力学性质

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2024-01-01 DOI: 10.15251/cl.2024.211.1

S. Pal, D. Sharma, M. Chandra, M. Mittal, P. Singh, M. Lal, A. S. Verma

{"title":"Thermodynamic properties of chalcogenide and pnictide ternary tetrahedral semiconductors","authors":"S. Pal, D. Sharma, M. Chandra, M. Mittal, P. Singh, M. Lal, A. S. Verma","doi":"10.15251/cl.2024.211.1","DOIUrl":"https://doi.org/10.15251/cl.2024.211.1","url":null,"abstract":"In this paper, we present thermodynamic properties such as heat of formation, heat of fusion and entropy of fusion for chalcopyrite structured solids with the product of ionic charges and nearest neighbour distance d (Å). The heat of formation (∆Hf) of these compounds exhibit a linear relationship when plotted on a log-log scale against the nearest neighbour distance d (Å), but fall on different straight lines according to the ionic charge product of the compounds. On the basis of this result two simple heat of formation (∆Hf)heat of fusion (∆HF), and heat of formation (∆Hf)entropy of fusion (∆SF), relationship are proposed and used to estimate the heat of fusion (∆HF) and entropy of fusion (∆SF) of these semiconductors. We have applied the proposed relation to AIIBIVC2 V and AI BIIIC2 VI chalcopyrite semiconductor and found a better agreement with the experimental data than the values found by earlier researchers. The results for heat of formation differ from experimental values by the following amounts: 0.3% (CuGaSe2), 6.7% (CuInSe2), 5% (AgInSe2), 5% (ZnGeP2), 6% (ZnGeP2), 0.4% (ZnSnP2), 0.7% (ZnSiAs2), 2.6% (ZnGeAs2), 1.2% (ZnSnAs2), 3.8% (CdGeP2), 6.4% (CdGeAs2), the results for heat of fusion differ from experimental values by the following amounts: 2.6% (CuGaS2), 0.6% (CuInTe2), 6% (ZnGeAs2), 8.8% (ZnSiAs2) and the results for entropy of fusion differ from experimental values by the following amounts: 6% (CuInSe2), 8% (CdSiP2).","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139638718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal stability and crystallization kinetic of Se-Te-Ag glassy alloys and thick films for electronic devices 用于电子设备的硒-碲-银玻璃合金和厚膜的热稳定性和结晶动力学

IF 1 4区材料科学

Chalcogenide Letters Pub Date : 2024-01-01 DOI: 10.15251/cl.2024.211.65

K. I. Hussain, A. Ashour, E. S. Yousef, E. R. Shaaban

{"title":"Thermal stability and crystallization kinetic of Se-Te-Ag glassy alloys and thick films for electronic devices","authors":"K. I. Hussain, A. Ashour, E. S. Yousef, E. R. Shaaban","doi":"10.15251/cl.2024.211.65","DOIUrl":"https://doi.org/10.15251/cl.2024.211.65","url":null,"abstract":"The present work has examined the thermal features of glassy chacogenide materials Se0.75-xTe0.25Agx (x = 0, 2, 4, 6, 8, 10 at %). The thermal stability of these compositions has been assessed under non-isothermal conditions using Differential Scanning Calorimetry (DSC), which has been used to find the glass transition temperature (Tg), the initial crystallization temperature (Tin), the temperature corresponding to the top of the crystallization rate (Tp), and the melting temperature (Tm). In addition, the kinetic parameter Kr(T) was given as an additional sign of thermal stability. Among these compositions, it was discovered that Se0.71Te0.25Ag0.04 had the best glass-forming ability and glass-thermal stability. The average coordination numbers of the considered samples have been discussed in relation to these results. Additionally, we measured the sheet resistivity, ρ, whose thickness is equivalent to 1000 nm at heating rate 5 K/min, in this work to study the crystallization kinetics of thick films of Se0.75-xTe0.25Agx (x = 0, 2, 4, 6, 8, 10 at %) in the temperature range of 300 to 625 K. This range was sufficient to draw attention to two substantial areas in the resistivity versus temperature curve, and the derivation of resistivity as a function of temperature established that the films under study only had one crystallization region.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.0,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140518891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement efficiency of cadmium selenium solar cell by doping within silver 银内掺杂提高镉硒太阳能电池效率

4区材料科学

Chalcogenide Letters Pub Date : 2023-11-10 DOI: 10.15251/cl.2023.2010.733

M. H. Mustafa, H. M. Ali, G. S. Ahmed, B. H. Hussein

引用次数: 0

Study of structural, morphological and optical properties of Mn+2 doped CdS nanoparticles synthesized at various doping concentration 不同掺杂浓度下Mn+2掺杂CdS纳米颗粒的结构、形态和光学性质研究

4区材料科学

Chalcogenide Letters Pub Date : 2023-11-10 DOI: 10.15251/cl.2023.2010.709

R. Ranjan, C. M. S. Negi, S. K. Choubey, K. P. Tiwary

{"title":"Study of structural, morphological and optical properties of Mn+2 doped CdS nanoparticles synthesized at various doping concentration","authors":"R. Ranjan, C. M. S. Negi, S. K. Choubey, K. P. Tiwary","doi":"10.15251/cl.2023.2010.709","DOIUrl":"https://doi.org/10.15251/cl.2023.2010.709","url":null,"abstract":"Manganese-doped cadmium sulphide semiconductor nanoparticles (CdS: Mn) NPs have been created utilizing a microwave-assisted solvothermal technique at different Mn concentrations (0, 1%, 3%, and 5%). The chemicals utilized for the preparation of Mndoped CdS nanoparticles were sodium sulphide (Na2S.xH2O), manganese chloride (MnCl2.4H2O), and cadmium acetate (CH3COO)2Cd., H2O). To determine the structural dimensions of the generated nanoparticles, the Debye-Scherer equation was used to calculate the average crystallite size at the full-width half maximum (FWHM) of the diffraction peaks. FTIR spectra analysis was used to look at the various functional and vibrational groups present in the Mn-doped CdS nanoparticle sample. The structure features of the produced nanoparticles have been examined using X-ray diffraction patterns. Energy dispersive X-rays were employed to ascertain the chemical composition of the synthesized nanoparticles. The optical properties and quantification of the energy band gap of the nanoparticles have been done using UV-V spectroscopy. According to XRD calculations, the cubic zinc-blend structure of the generated NPs had a crystal size of between 4 and 7 nm. By using EDX spectroscopy, the incorporation of Mn at the CdS lattice was confirmed.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135091783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0